Updated on 2026/05/09

写真a

 
OHORI,Daisuke
 
Organization
Faculty of Engineering Science Associate Professor
Title
Associate Professor

Research Areas

  • Nanotechnology/Materials / Nanostructural physics

Research History

  • Kansai University   Faculty of Engineering Science   Associate Prof.

    2026.4

  • Tohoku University   Institute of Fluid Science Global Collaborative Research and Education Center for Integrated Flow Science Green Nanotechnology Laboratory   Assistant Professor

    2024.1

  • Tohoku University   Institute of Fluid Science Global Collaborative Research and Education Center for Integrated Flow Science Green Nanotechnology Laboratory   Project Assist. Professer

    2021.1 - 2023.12

  • National Chiao Tung University   Post. Doc. Researcher

    2020.3 - 2020.12

  • Tohoku University   Institute of Fluid Science Innovative Energy Research Center (IER) Green Nanotechnology Laboratory   Science Researcher

    2018.4 - 2020.2

  • Tohoku University   Institute of Fluid Science Innovative Energy Research Center (IER) Green Nanotechnology Laboratory   Research assistant

    2017.4 - 2018.3

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Papers

  • Thermal annealing–induced Ag/WO3/Ag plasmonic nanocavities for emission enhancement

    Shota Takahashi, Yusuke Takahashi, Takayuki Kiba, Midori Kawamura, Naofumi Ohtsu, Peng Sheng, Daisuke Ohori, Kazuhiko Endo

    Vacuum   2026.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.vacuum.2026.115381

  • Direct observation of half-cycle adsorption of aminosilane precursors by in situ XPS

    Yuki Tsuchiizu, Daisuke Ohori, Teruhisa Ohtsuka, Masashi Yamazaki, Hiroshi Arimoto, Kazuhiko Endo

    Journal of Vacuum Science & Technology A   2026.5

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0005453

  • (Invited) Neutral Beam Etching of InGaN/GaN and AlGaInP for Full-Color Micro-LEDs: Surface Damage Mitigation and Etch Profile Control

    Daisuke Ohori, Xuelun Wang, Takahiro Kuribayashi, Kazuhiko Endo, Seiji Samukawa

    ECS Meeting Abstracts   2025.11

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/MA2025-02361747mtgabs

  • Effect of Film Morphology on Electrical Conductivity of PEDOT:PSS

    Aditya Saha, Daisuke Ohori, Takahiko Sasaki, Keisuke Itoh, Ryuji Oshima, Seiji Samukawa

    Nanomaterials   2023.12

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/nano14010095

  • 3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination

    Xuelun Wang, Xixi Zhao, Tokio Takahashi, Daisuke Ohori, Seiji Samukawa

    Nature Communications   2023.11

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41467-023-43472-z

  • Effect of Interfacial Oxide Layers on Self-Doped PEDOT/Si Hybrid Solar Cells Reviewed International journal

    Aditya Saha, Ryuji Oshima, Daisuke Ohori, Takahiko Sasaki, Hirokazu Yano, Hidenori Okuzaki, Takashi Tokumasu, Kazuhiko Endo, Seiji Samukawa

    Energies   16   6900-1 - 6900-14   2023.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/en16196900

  • Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

    Daisuke Ohori, Takahiro Ishihara, Xuelun Wang, Kazuhiko Endo, Tsau-Hua Hsieh, Yiming Li, Nobuhiro Natori, Kazuma Matsui, Seiji Samukawa

    Nanotechnology   2023.9

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6528/acd856

  • Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

    Tomoki Harada, Daisuke Ohori, Kazuhiko Endo, Seiji Samukawa, Tetsuo Ikari, Atsuhiko Fukuyama

    Journal of Applied Physics   133 ( 12 )   2023.3

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0146578

    Scopus

  • Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

    Yi-Ho Chen, Daisuke Ohori, Muhammad Aslam, Yao-Jen Lee, Yiming Li, Seiji Samukawa

    IEEE Open Journal of Nanotechnology   2023

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/OJNANO.2023.3306011

  • Impact of nanopillars on phonon dispersion and thermal conductivity of silicon membranes

    Anufriev, R., Ohori, D., Wu, Y., Yanagisawa, R., Jalabert, L., Samukawa, S., Nomura, M.

    Nanoscale   15 ( 5 )   2023

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d2nr06266f

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  • Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition

    Beibei Ge, Daisuke Ohori, Yi-Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Seiji Samukawa

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   40 ( 2 )   2022.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0001607

    Web of Science

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  • Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED

    Takahiro Ishihara, Daisuke Ohori, Xuelun Wang, Kazuhiko Endo, Nobuhiro Natori, Daisuke Sato, Yiming Li, Seiji Samukawa

    Proceedings of the IEEE Conference on Nanotechnology   2022-July   48 - 51   2022

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    Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/NANO54668.2022.9928699

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  • Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

    Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Seiji Samukawa

    Journal of Vacuum Science & Technology A   39 ( 4 )   042601 - 042601   2021.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0000867

    Web of Science

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  • Surface wettability of silicon nanopillar array structures fabricated by biotemplate ultimate top-down processes

    Sou Takeuchi, Daisuke Ohori, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn Hwan Tarng, Kazuhiko Endo, Seiji Samukawa

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   39 ( 2 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0000770

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  • Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

    Daisuke Ohori, Min-Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming-Yi Lee, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Yao-Jen Lee, Seiji Samukawa

    IEEE OPEN JOURNAL OF NANOTECHNOLOGY   2   148 - 152   2021

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/OJNANO.2021.3131165

    Web of Science

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  • Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices

    Daisuke Ohori, Masayuki Murata, Atsushi Yamamoto, Kazuhiko Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, Jenn-Hwan Tarng, Yao-Jen Lee, Seiji Samukawa

    2021 IEEE 21ST INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE NANO 2021)   2021-July   199 - 202   2021

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/NANO51122.2021.9514289

    Web of Science

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  • High Electron Mobility Germanium FinFET Fabricated by Atomic Layer Defect-Free and Roughness-Free Etching

    Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao-Jen Lee, Jenn-Hwan Tarng, Yiming Li, Seiji Samukawa

    IEEE Open Journal of Nanotechnology   2   26 - 30   2021

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/ojnano.2021.3055150

    Web of Science

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  • Surface wettability of nanopillar array structures fabricated by bio-template ultimate top-down processes

    Sou Takeuchi, Daisuke Ohori, Teruhisa Ishida, Mami Tanaka, Masahiro Sota, Yiming Li, Jenn-Hwan Tarng, Kazuhiko Endo, Seiji Sarnukawa

    2021 IEEE 21ST INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE NANO 2021)   2021-July   203 - 206   2021

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/NANO51122.2021.9514287

    Web of Science

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  • Fabrication and simulation of neutral-beam-etched silicon nanopillars

    Min Hui Chuang, Daisuke Ohori, Yiming Li, Kuan Ru Chou, Seiji Samukawa

    Vacuum   181   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.vacuum.2020.109577

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  • High Performance GaN HEMT and Ge Fin FET Device Realizing by Atomic-layer Defect-free Etching with Chlorine Neutral Beam

    Daisuke Ohori, Niraj Man Shrestha, Yiming Li, Jenn Hwan Tarng, Seiji Samukawa

    2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020   108 - 109   2020.8

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    Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/VLSI-TSA48913.2020.9203657

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  • Decreasing of the thermal conductivity of Si nanopillar/SiGe composite films investigated by using a piezoelectric photothermal spectroscopy

    Tomoki Harada, Tsubasa Aki, Daisuke Ohori, Seiji Samukawa, Tetsuo Ikari, Atsuhiko Fukuyama

    Japanese Journal of Applied Physics   59   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ab82a6

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  • High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: Towards directional micro-LED in top-down structure

    Kexiong Zhang, Tokio Takahashi, Daisuke Ohori, Guangwei Cong, Kazuhiko Endo, Naoto Kumagai, Seiji Samukawa, Mitsuaki Shimizu, Xuelun Wang

    Semiconductor Science and Technology   35 ( 7 )   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6641/ab8539

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  • Coherent and Incoherent Impacts of Nanopillars on the Thermal Conductivity in Silicon Nanomembranes

    Xin Huang, Daisuke Ohori, Ryoto Yanagisawa, Roman Anufriev, Seiji Samukawa, Masahiro Nomura

    ACS Applied Materials and Interfaces   12 ( 22 )   25478 - 25483   2020.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.0c06030

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    PubMed

  • Atomic-layer etching of GaN by using an HBr neutral beam

    Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Hideyuki Kurihara, Seiji Samukawa

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   38 ( 3 )   2020.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/6.0000126

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  • Numerical simulation of thermal conductivity of SiNW-SiGe<inf>0.3</inf> composite for thermoelectric applications

    Ming Yi Lee, Yiming Li, Min Hui Chuang, Daisuke Ohori, Seiji Samukawa

    IEEE Transactions on Electron Devices   67 ( 5 )   2088 - 2092   2020.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2020.2975079

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  • Highly Water-Repellent Nanostructure on Quartz Surface Based on Cassie-Baxter Model With Filling Factor Reviewed

    Daisuke Ohori, Sou Takeuchi, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn-Hwan Tarng, Kazuhiko Endo, Seiji Samukawa

    IEEE Open Journal of Nanotechnology   1 ( 1 )   1 - 5   2020.3

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/ojnano.2020.2980629

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  • Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition Reviewed

    Hua Hsuan Chen, Susumu Toko, Daisuke Ohori, Takuya Ozaki, Mitsuya Utsuno, Tomohiro Kubota, Toshihisa Nozawa, Seiji Samukawa

    Journal of Physics D: Applied Physics   53 ( 1 )   2020

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ab484d

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  • High efficiency 100-nm-sized InGaN/GaN active region fabricated by neutral-beam-etching and GaN regrowth for directional micro-LED

    Kexiong Zhang, Tokio Takahashi, Daisuke Ohori, Guangwei Cong, Kazuhiko Endo, Naoto Kumagai, Seiji Samukawa, Mitsuaki Shimizu, Xuelun Wang

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)   2019

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    Web of Science

  • Radiative carrier recombination process in GaAs ND fabricated by bio-template and neutral beam etching embedded by AlGaAs

    A. Iwamoto, D. Ohori, Cedric Thomas, A. Higo, S. Samukawa, T. Ikari, A. Fukuyama

    Proceedings of the 17th Int. Symo. on Advanced Fluid Information   16 - 17   2016.12

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Effect of embedding process on photoluminescence spectra of GaAs quantum nanodisks fabricated by neutral beam nanoprocess Reviewed

    D. Ohori, K. Kondo, K. Sakai, C. Thomas, A. Higo, S. Samukawa, T. Ikari, A. Fukuyama

    European Materials Research Society 2016 Spring Meeting   2016.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/NANO.2016.7751347

  • Light emission from GaAs/AlGaAs nanopillars fabricated by neutral beam etching and bio-template Reviewed

    D. Ohori, A. Suzuki, C. Thomas, A. Higo, S. Samukawa, A. Fukuyama, T. Ikari

    The 2015 E-MRS Spring meeting   2015.5

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    Language:English   Publishing type:Research paper (international conference proceedings)  

  • Photoluminescence study of quantum levels in GaAs/AlGaAs quantum nanodisks fabricated by bio-template and neutral beam etching Reviewed

    A. Fukuyama, D. Ohori, A. Suzuki, C. Thomas, A. Higo, S. Samukawa, T. Ikari

    The 2015 E-MRS Spring meeting   2015.5

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  • Photoluminescence of Ge nanodisk array structure fabricated by bio-template and neutral beam etching Reviewed

    D. Ohori, Y. Murayama, K. Kondo, T. Takuya, T. Okada, S. Samukawa, A. Fukuyama, T. Ikari

    Proceedings of the 14th Int. Symo. on Advanced Fluid Information   118 - 119   2014.12

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  • Effect of oxygen pressure on photoluminescence spectra and hall coefficients of Li-Ni Co-Doped ZnO films grown by a pulsed laser deposition

    K. Sakai, K. Ishikura, D. Ohori, D. Nakamura, A. Fukuyama, T. Okada, M. S. Ramachandra Rao, T. Ikari

    Springer Series in Materials Science   180   91 - 99   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/978-81-322-1160-0_4

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  • Photoconductivity Decay and Carrier Lifetime in Silicon Nanodisk Array Structure Fabricated by Using Bio-templates and Neutral Beam Etching Reviewed

    Daisuke Ohori, Atsuhiko Fukuyama, Seiji Samukawa, Tetsuo Ikari

    Proceedings of the 13th Int. Symo. on Advanced Fluid Information   96 - 97   2013.12

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MISC

  • Effects of Nb oxide film thickness controlled by neutral beam oxidation on superconducting resonators

    紺野太壱, 大堀大介, 日高睦夫, 野田周一, 遠藤和彦, 向井寛人, 向井寛人, 朝永顕成, 朝永顕成, TSAI J.S., TSAI J.S., 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022

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  • Evaluation for Optical and Thermal Properties of Si-nanopillars(NPs)/SiGe Composite Film Intentionally Varied NPs Spacing

    50   59 - 63   2021.9

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    Language:Japanese  

  • Atomic Layer Selective GaN/SiN Etching by HBr Neutral Beam

    Sawada Takahiro, Ohori Daisuke, Sugawara Kenta, Okada Masaya, Nakata Ken, Inoue Kazutaka, Sato Daisuke, Samukawa Seiji

    JSAP Annual Meetings Extended Abstracts   2021.1   2443 - 2443   2021.2

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2021.1.0_2443

  • High Electron Mobility Germanium FinFET Fabricated by Neutarl Beam

    Ohori Daisuke, Noda Shuichi, Fujii Takuya, Mizubayashi Wataru, Endo Kazuhiko, Li Yiming, Lee Yao-Jen, Ozaki Takuya, Samukawa Seiji

    JSAP Annual Meetings Extended Abstracts   2021.1   2361 - 2361   2021.2

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2021.1.0_2361

  • Effect of Solution of Containing Glycerol for 2D Ferritin Arrangemen

    Ohori Daisuke, Takeuchi Sou, Sato Asahi, Ishida Teruhisa, Sota Masahiro, Tanaka Mami, Endo Kazuhiko, Samukawa Seiji

    JSAP Annual Meetings Extended Abstracts   2021.1   2307 - 2307   2021.2

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2021.1.0_2307

  • Effects of surface oxide film on Nb electrode controlled by neutral beam on superconducting resonators

    紺野太壱, 大堀大介, 日高睦夫, 野田周一, 遠藤和彦, 向井寛人, 朝永顕成, 朝永顕成, TSAI J.S., TSAI J.S., 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   2021

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  • Control of Nb Surface Oxide Film by Neutral Beam Processes and Effect on Q Value

    紺野太壱, 大堀大介, 日高睦夫, 遠藤和彦, 向井寛人, TSAI J.S., TSAI J.S., 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   2021

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  • 3J5-2 Theoretical study on the photothermal signal of the multilayer structure and application to the Si-nanopillar/SiGe composite films

    Arata Yuki, Harada Tomoki, Ohori Daisuke, Samukawa Seiji, Ikari Tetsuo, Fukuyama Atsuhiko

    Proceedings of Symposium on Ultrasonic Electronics   41   n/a   2020.11

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    Language:English   Publisher:Institute for Ultrasonic Elecronics  

    DOI: 10.24492/use.41.0_3j5-2

  • Defect-free Atomic Layer Etching of GaN with Neutral-Beam Etching

    Sawada Takahiro, Ohori Daisuke, Sugawara Kenta, Okada Masaya, Satou Daisuke, Kurihara Hideyuki, Samukawa Seiji

    JSAP Annual Meetings Extended Abstracts   2020.2   1886 - 1886   2020.8

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2020.2.0_1886

  • Effect of Si-Nanopillar Spacing on Thermal Properties

    Harada Tomoki, Arata Yuki, Ohori Daisuke, Samukawa Seiji, Ikari Tetsuo, Fukuyama Atsuhiko

    JSAP Annual Meetings Extended Abstracts   2020.2   2384 - 2384   2020.8

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2020.2.0_2384

  • Effect of Nb surface oxide composition by Neutral beam on Q value

    紺野太壱, 大堀大介, 日高睦夫, 遠藤和彦, 向井寛人, TSAI J.S., 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   81st   2020

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  • Control of the Water-repellent by designing Nano-pillar Array Structures Fabricated by Bio-template Ultimate Etching

    竹内聡, 大堀大介, 石田昌久, 曽田匡洋, 遠藤和彦, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020

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  • Niobium Etching Characteristics by Neutral Beam

    紺野太壱, 大堀大介, 日高睦夫, 遠藤和彦, 向井寛人, TSAI J.S., 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020

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  • Water-repellency Realization of Nanopillar Structure on Quartz surface by Bio-template Ultimate fabrication

    大堀大介, 竹内聡, 石田昌久, 曽田匡洋, 遠藤和彦, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020

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  • Basic Etching Characteristics of GaN by Neutral Beam

    澤田尭廣, 大堀大介, 菅原健太, 岡田政也, 井上和孝, 佐藤大輔, 栗原秀行, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020

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  • Development of Brain-Like Memory Integrated Systems and Stacked Analog Memory Devices

    森江隆, 寒川誠二, 山下健弥, 原田將敬, 大堀大介, 遠藤和彦, 大野武雄

    東北大学流体科学研究所共同利用・共同研究拠点流体科学国際研究教育拠点活動報告書   2018   2020

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  • 1P1-8 Analysis and Estimation of Thermal Conductivity of Si Nanopillar/SiGe Composite Film by Using Photo-Thermal Spectroscopy Measurement with a Multi-layer Model Calculation

    Harada Tomoki, Aki Tsubasa, Ohori Daisuke, Samukawa Seiji, Ikari Tetsuo, Fukuyama Atsuhiko

    Proceedings of Symposium on Ultrasonic Electronics   40   n/a   2019.11

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    Language:English   Publisher:Institute for Ultrasonic Elecronics  

    DOI: 10.24492/use.40.0_1p1-8

  • Near-Complete Elimination of Size-Dependent Efficiency Decrease in GaN Micro-Light-Emitting Diodes

    Jun Zhu, Tokio Takahashi, Daisuke Ohori, Kazuhiko Endo, Seiji Samukawa, Mitsuaki Shimizu, Xue Lun Wang

    Physica Status Solidi (A) Applications and Materials Science   216 ( 22 )   1970075 - 1970075   2019.11

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  • Atomic layer defect-free etching for germanium using HBr neutral beam

    Takuya Fujii, Daisuke Ohori, Shuichi Noda, Yosuke Tanimoto, Daisuke Sato, Hideyuki Kurihara, Wataru Mizubayashi, Kazuhiko Endo, Yiming Li, Yao Jen Lee, Takuya Ozaki, Seiji Samukawa

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   37 ( 5 )   2019.9

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  • Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

    Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, En Tzu Lee, Yiming Li, Yao Jen Lee, Takuya Ozaki, Seiji Samukawa

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films   37 ( 2 )   2019.3

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  • Siナノピラー間隔変化による熱伝導率・電気伝導率の独立制御

    大堀大介, 久保山瑛哲, 村田正行, 山本淳, 野村政宏, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • ミニマル中性粒子ビームエッチング装置の開発

    大堀大介, 野田周一, 野沢善幸, LIAO B., 藤井竜介, 速水利泰, 門井幹夫, 石田昌久, 田中麻美, 曽田匡洋, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • マスクレス超低損傷加工を実現するバイオテンプレート形成装置の開発

    門井幹夫, 石田昌久, 田中麻美, 曽田匡洋, 大堀大介, 野田周一, 野沢善幸, LIAO B., 藤井竜介, 速水利泰, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • マスクレス超低損傷加工を実現する小型中性粒子ビームエッチング装置の開発

    野沢善幸, LIAO B., 藤井竜介, 速水利泰, 大堀大介, 野田周一, 門井幹夫, 石田昌久, 田中麻美, 曽田匡洋, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • Gallium Nitride Atomic Layer Etching by Chlorine Neutral Beam

    SUGAWARA KENTA, OHORI (P)DAISUKE, INOUE KAZUTAKA, SAMUKAWA SEIJI

    JSAP Annual Meetings Extended Abstracts   66th   2881 - 2881   2019

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    DOI: 10.11470/jsapmeeting.2019.1.0_2881

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  • Siナノピラー構造の間隔制御することによるフォノン場制御とキャリア輸送特性に与える影響

    大堀大介, 久保山瑛哲, 村田正行, 山本淳, 野村政宏, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   66th   2019

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  • 中性粒子ビームによるGe Fin構造の側壁エッチング特性の検討

    大堀大介, 野田周一, 藤井卓也, 水林亘, 遠藤和彦, 遠藤和彦, LEE En-Tzu, YIMING Li, LEE Yao-Jen, 尾崎卓哉, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   66th   2019

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  • バイオテンプレート極限加工により作製した無欠陥配置制御Siナノピラー構造による表面撥水性の制御

    竹内聡, 大堀大介, 石田昌久, 田中麻美, 曽田匡洋, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   66th   2019

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  • Fabrication of High-Efficiency GaN Micro-LEDs by Using Neutral-Beam Etching

    Zhu Jun, Takahashi Tokio, Endo Kazuhiko, Ohori Daisuke, Samukawa Seiji, Wang Xue-Lun

    JSAP Annual Meetings Extended Abstracts   80th   3522 - 3522   2019

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    DOI: 10.11470/jsapmeeting.2019.2.0_3522

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  • HBr中性粒子ビームによるGe原子層無欠陥エッチングの検討

    大堀大介, 藤井拓也, 野田周一, 水林亘, 遠藤和彦, 遠藤和彦, LI Yiming, LEE Yao-Jen, 尾崎卓哉, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • 塩素中性粒子ビームエッチングによるGaN HEMT高信頼化

    菅原健太, 岡田政也, 市川弘之, 井上和孝, 大堀大介, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • バイオテンプレート極限加工により作製した配置制御Siナノピラー構造による表面撥水性の制御

    竹内聡, 大堀大介, 石田昌久, 田中麻美, 曽田匡洋, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019

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  • 無欠陥Siナノピラー構造のキャリア再結合過程評価

    松田真輝, 大堀大介, 寒川誠二, 寒川誠二, 碇哲雄, 福山敦彦

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th   ROMBUNNO.21p‐PB4‐2 - 2983   2018

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    DOI: 10.11470/jsapmeeting.2018.2.0_2983

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  • 中性粒子ビームとバイオテンプレートを用いた高アスペクト比Siナノピラー構造の作製

    大堀大介, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th   ROMBUNNO.19p‐C204‐2 - 1848   2018

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    DOI: 10.11470/jsapmeeting.2018.1.0_1848

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  • 無欠陥配置制御Siナノピラー構造表面における撥水性の制御

    大堀大介, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th   ROMBUNNO.18p‐431B‐9 - 1569   2018

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    DOI: 10.11470/jsapmeeting.2018.2.0_1569

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  • 無欠陥Siナノピラー構造によるフォノン場制御と高移動度キャリア輸送

    大堀大介, 久保山瑛哲, 山本淳, 村田正行, 遠藤和彦, 遠藤和彦, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th   ROMBUNNO.20p‐211A‐13   2018

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  • Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

    Daisuke Ohori, Atsuhiko Fukuyama, Kentaro Sakai, Akio Higo, Cedric Thomas, Seiji Samukawa, Tetsuo Ikari

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 5 )   50308 - 50308   2017.5

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  • Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

    Daisuke Ohori, Atsuhiko Fukuyama, Kentaro Sakai, Akio Higo, Cedric Thomas, Seiji Samukawa, Tetsuo Ikari

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 5 )   2017.5

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  • Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

    Daisuke Ohori, Atsuhiko Fukuyama, Kentaro Sakai, Akio Higo, Cedric Thomas, Seiji Samukawa, Tetsuo Ikari

    Japanese Journal of Applied Physics   56 ( 5 )   2017.5

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  • 超高効率太陽電池用量子ドット構造のバンド構造と光学的性質

    福山敦彦, 寒川誠二, 大堀大介, 碇哲雄, 久保田智宏, 岡田健, 肥後昭男

    東北大学流体科学研究所共同利用・共同研究拠点流体科学研究拠点活動報告書   2015   81‐82   2017

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  • 量子ナノディスクのバンド構造制御とデバイス応用

    福山敦彦, 寒川誠二, 大堀大介, 碇哲雄, 久保田智宏, 岡田健, 肥後昭男

    東北大学流体科学研究所共同利用・共同研究拠点流体科学国際研究教育拠点活動報告書   2016   31‐32   2017

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  • ナノピラー中のナノディスク配列による発光再結合の直径依存性

    大堀大介, 石塚史典, THOMAS Cedric, 寒川誠二, 碇哲雄, 福山敦彦

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   78th   ROMBUNNO.6a‐A404‐10   2017

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  • Investigation of Radiative Recombination of GaAs Quantum Dots Produced by Droplet Epitaxy

    岩元杏里, 石塚史典, 大堀大介, 間野高明, 碇哲雄, 福山敦彦

    宮崎大学工学部紀要(Web)   46 ( 46 )   85‐88 (WEB ONLY) - 88   2017

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    We investigated a radiative recombination in the self-assembled GaAs quantum dots (QDs) structure embedded by Al0.33Ga0.67As barrier material on the GaAs (311)A substrates formed by a droplet epitaxy method by using photoluminescence (PL) method. The quantum-well layer was inserted under the QDs structure to thicken the QDs height; hereafter we called an effective height (EH). The PL peak originated from QDs showed red-shift and increase in the signal intensity with increasing the thickness of EH. A full width at half maximum also narrowed. As the results, the radiative recombination within the inserted quantum well became dominant. From the temperature dependent PL measurements, the temperature coefficient estimated from the PL peak energy between 60 and 140 K for the QDs sample without quantum-well layer was steeper than thick EH samples. This implied that QDs had a considerable variation in the diameter. Since a QD with large diameter has a weak carrier confinement to lateral direction, photo- enerated carriers can escape from QDs and recombine within quantum-well layer. It is concluded that radiative recombination within quantum-well layer was dominant because of weak carrier confinement of present QD.

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  • Investigation of carrier recombination process in top-down fabricated GaAs nano-disc array structure by photoluminescence measurements

    T. Ikari, D. Ohori, A. Higo, C. Thomas, S. Samukawa, K. Nishioka, A. Fukuyama

    Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings   2016.12

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  • Photoluminescence emission from as-etched quantum nanodisks fabricated by bio-template and neutral beam etching process

    D. Ohori, K. Kondo, K. Sakai, A. Higo, C. Thomas, S. Samukawa, T. Ikari, A. Fukuyama

    16th International Conference on Nanotechnology - IEEE NANO 2016   321 - 322   2016.11

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  • Optical properties of quantum energies in GaAs quantum nanodisks produced using a bio-nanotemplate and a neutral beam etching technique

    Daisuke Ohori, Atsuhiko Fukuyama, Cedric Thomas, Akio Higo, Seiji Samukawa, Tetsuo Ikari

    Japanese Journal of Applied Physics   55 ( 9 )   2016.9

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  • Optical properties of quantum energies in GaAs quantum nanodisks produced using a bio-nanotemplate and a neutral beam etching technique

    Ohori Daisuke, Fukuyama Atsuhiko, Thomas Cedric, Higo Akio, Samukawa Seiji, Ikari Tetsuo

    Japanese Journal of Applied Physics   55 ( 9 )   92101 - 92101   2016.8

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  • Optical properties of quantum energies in GaAs quantum nanodisks produced using a bio-nanotemplate and a neutral beam etching technique

    Ohori Daisuke, Fukuyama Atsuhiko, Thomas Cedric, Higo Akio, Samukawa Seiji, Ikari Tetsuo

    Jpn. J. Appl. Phys.   55 ( 9 )   2016.8

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    Publisher:Institute of Physics  

    We demonstrated that the lattice-matched GaAs quantum nanodisks (QNDs) embedded in an AlGaAs matrix were fabricated by our original top-down nanoprocess. Lattice-matched GaAs QNDs are very attractive in quantum cryptography because the spin relaxation time of QNDs might be longer than that of strained quantum dots. Quantum levels of QNDs were investigated by the photoluminescence (PL) technique. The minimum diameter and thickness of QNDs were 7 and 8 nm, respectively. PL peaks of QNDs at 1.64 and 1.66 eV were observed to be higher than that of multiple quantum wells (MQWs) observed at 1.57 eV. It is suggested that these peaks are due to the diameter distribution of QNDs. The calculated quantum levels were in good agreement with the present experimental results. The observation of the PL peaks from QNDs demonstrates that the quantum level is strongly confined not only in the perpendicular direction but also in the lateral direction.

  • Investigation of Radiative Recombination of Semi-Polar (1-101)GaN Films Grown on Patterned (001)Si Substrate

    杉原 圭二, 中野 真理菜, 岩元 杏里, 大堀 大介, 本田 善央, 天野 浩, 碇 哲雄, 福山 敦彦

    宮崎大學工學部紀要   45 ( 45 )   105 - 109   2016.7

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    We investigated the radiative recombination properties of semi-polar (11̅01)GaN films grown on patterned (001)Si substrate by using photoreflectance (PR) and photoluminescence (PL) spectroscopies. The X-ray diffraction (XRD) method was also used for investigating strain content. Estimated bandgap energy (Eg) by Kramers-Kronig transformation of PR spectrum showed about 35 meV lower energy side than that of polar (0001)GaN. It was found that the strain of growth direction (=[111]Si) did not exist from the XRD 2- scan. Therefore, reduction of Eg may be caused by the tensile strain along the [11̅0]Si or [112̅-]Si direction. From the low temperature PL and PR measurements, we could confirm the several radiative peaks caused by donor-bound exciton, acceptor-bound exciton, and donor-to-acceptor pair recombination.

    CiNii Books

  • Investigation of Radiative Recombination of Semi-Polar (1-101)GaN Films Grown on Patterned (001)Si Substrate

    杉原圭二, 中野真理菜, 岩元杏里, 大堀大介, 本田善央, 天野浩, 碇哲雄, 福山敦彦

    宮崎大学工学部紀要(Web)   ( 45 )   105‐109 (WEB ONLY)   2016

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  • バイオテンプレート極限加工を用いたGaAs量子ナノディスクの発光再結合の温度依存性

    大堀大介, THOMAS Cedric, 肥後昭男, 寒川誠二, 寒川誠二, 碇哲雄, 福山敦彦

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th   ROMBUNNO.16a‐P1‐11   2016

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  • 中性粒子ビームとバイオナノテンプレートを用いて作製したGaAs量子ナノディスクのキャリア再結合とその埋め込み効果

    近藤清文, 大堀大介, 境健太郎, THOMAS Cedric, 肥後昭男, 寒川誠二, 寒川誠二, 前田幸治, 碇哲雄, 福山敦彦

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd   2016

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  • 半極性(1-101)面で成長させたGaN薄膜のバンドギャップ減少

    杉原圭二, 中野真理菜, 大堀大介, 碇哲雄, 福山敦彦, 天野浩, 本田善央

    応用物理学会九州支部学術講演会講演予稿集(Web)   41   2015

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  • バイオナノテンプレートマスクと中性粒子ビームを用いたGaAs量子ナノピラーの発光再結合過程

    大堀大介, 近藤清文, THOMAS Cedric, 肥後昭男, 寒川誠二, 碇哲雄, 福山敦彦

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

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  • The Effect of Strain on the Optical Properties of GaN Grown on Si Investigated by Photoreflectance and Photoluminescence

    元田雄大郎, 鈴木章生, 大堀大介, 福山敦彦, 本田善央, 山口雅史, 天野浩, 碇哲雄

    宮崎大学工学部紀要(Web)   42 ( 42 )   23 - 26   2013

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    Non-doped (1-101)GaN and C-doped (1-101)GaN thin film samples were grown by a selective metal-organic-vapor-phase-epitaxy (MOVPE) method on 8˚off-oriented (001) Si substrate. In This study, we identify the E_g of the GaN thin films on Si substrate by photoreflectance (PR) and photoluminescence (PL) methods. From the fitting analysis to the obtained PR spectrum, the estimated values of critical energy (E_cr) of GaN film grown on Si substrate were approximately 1 meV lower than expected values for strain-free GaN bulk sumple. Exciton peak positions of non-doped and C-doped (1-101)GaN grown on Si substrate corresponded exactly to strain-free GaN bulk sample. These experimental results implied that the strain caused by the lattice mismuch between GaN and Si were relaxed in the GaN surface resion.

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  • パルスレーザー堆積法により作製したLi,Ni-codoped ZnO薄膜のPLスペクトルの経時変化

    村山友基, 大堀大介, 境健太郎, 中村大輔, 岡田龍雄, RAMACHANDRA RAO M. S., 碇哲雄

    応用物理学会九州支部学術講演会講演予稿集   39   2013

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  • パルスレーザー堆積法により作製したLi,Ni-codoped ZnO薄膜内に形成される不純物および欠陥準位がホール係数へ及ぼす影響

    大堀大介, 石倉健, 境健太郎, 中村大輔, 岡田龍雄, RAO M. S. R., 碇哲雄

    応用物理学会九州支部学術講演会講演予稿集   38   2012

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  • パルスレーザー堆積法により作製したLi,Co-codoped ZnO薄膜の光学特性

    石倉健, 境健太郎, 大堀大介, 碇哲雄, KUMAR J.

    応用物理学会九州支部学術講演会講演予稿集   38   2012

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  • A-15-20 Curvature Analysis of Walking Trajectories of Persons with Screened Visual and Hearing Senses

    Hayashi Neisei, Sorimachi Naohiro, Ohori Daisuke, Shimizu Takahiro, Obata Tsunehiro

    Proceedings of the IEICE General Conference   2010   202   2010

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    Language:Japanese   Publisher:一般社団法人電子情報通信学会  

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  • A-15-19 Ring-wandering of Visually Impaired Persons

    Hayashi Neisei, Ohori Daisuke, Shimizu Takahiro, Obata Tsunehiro

    Proceedings of the IEICE General Conference   2010   201   2010

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Industrial property rights

  • 半導体装置の製造方法

    菅原 健太, 寒川 誠二, 大堀 大介

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    Applicant:住友電気工業株式会社, 国立大学法人東北大学

    Application no:特願2020-026568  Date applied:2020.2

    Announcement no:特開2021-132118  Date announced:2021.9

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  • フェリチン用リンス液

    寒川誠二, 大堀大介, 門井幹夫

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    Applicant:株式会社 東北テクノアーチ, リソテック ジャパン株式会社

    Application no:特願2019-160097  Date applied:2019.9

    Announcement no:特開2021-038310  Date announced:2021.3

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  • 成形型及びレンズ

    寒川 誠二, 大堀 大介

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    Applicant:株式会社 東北テクノアーチ, 長瀬産業株式会社

    Application no:JP2019034281  Date applied:2019.8

    Publication no:WO2020-045668  Date published:2020.3

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Research Projects

  • 低電流密度・高輝度赤色マイクロLED加工のためのAlGaInP加工特性に関する研究

    Grant number:24K22948  2024.7 - 2026.3

    日本学術振興会  科学研究費助成事業  研究活動スタート支援

    大堀 大介

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    Grant amount:\2730000 ( Direct Cost: \2100000 、 Indirect Cost:\630000 )

  • High-mobility Semiconductor Devices due to Control of Phonon Field caused by Defect-free Nano-periodic Structures

    Grant number:20H05649  2020.8 - 2025.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (S)

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    Grant amount:\195000000 ( Direct Cost: \150000000 、 Indirect Cost:\45000000 )