Updated on 2025/09/15

写真a

 
YAMAMOTO,Mahito
 
Organization
Faculty of Engineering Science Associate Professor
Title
Associate Professor
External link

Degree

  • Ph.D. (Physics) ( 2013.7 )

Research Interests

  • Steep-slope transistors

  • Phase change materials

  • 2D materials

  • Nano Materials

  • Surce Physics

  • Correlated oxides

  • van der Waals heterostructures

  • Vanadium dioxide

  • Hexagonal boron nitride

  • Transition metal dichalcogenides

  • Graphene

  • Memory

  • Sensors

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / Transistors, sensors, memory

Education

  • University of Maryland   Department of Physics

    2008.8 - 2013.7

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  • Osaka University   Graduate School of Engineering   Department of Applied Physics

    2006.4 - 2008.3

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  • Osaka University   Department of Engineering   Division of Applied Science

    2002.4 - 2006.3

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Research History

  • Kansai University   Faculty of Engineering Science Department of Pure and Applied Physics   Associate Professor

    2021.4

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  • Kansai University   Faculty of Engineering Science Department of Pure and Applied Physics   Assistant Professor

    2020.4 - 2021.3

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  • Osaka Univeristy   Institute of Industrial and Scientific Research   Assistant Professor

    2016.4 - 2020.3

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  • National Institute for Materials Science   International Center for Materials Nanoarchitectonics   Postdoctoral Fellow

    2013.8 - 2016.3

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  • University of Maryland   Department of Physics   Research Assistantship

    2008.8 - 2013.7

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Professional Memberships

Papers

  • Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric

    Che-Yi Lin, Bo-Cia Chen, Yu-Chen Liu, Shang-Fu Kuo, Hsien-Chi Tsai, Yuan-Ming Chang, Chang-Yang Kuo, Chun-Fu Chang, Jyun-Hong Chen, Ying-Hao Chu, Mahito Yamamoto, Chang-Hong Shen, Yu-Lun Chueh, Po-Wen Chiu, Yi-Chun Chen, Jan-Chi Yang, Yen-Fu Lin

    Nature Electronics   8 ( 7 )   560 - 570   2025.6

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/s41928-025-01398-y

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    Other Link: https://www.nature.com/articles/s41928-025-01398-y

  • Signature of Dirac Fermion injection from hole-doped graphene into two-dimensional semiconductors Reviewed

    Sei Hosomi, Shuta Honda, Mitsuru Inada, Shingo Sato, Hiroshi Tani, Takashi Taniguchi, Kenji Watanabe, Keiji Ueno, Mahito Yamamoto

    Science and Technology Reports of Kasai University   67   13 - 18   2025.3

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    Authorship:Corresponding author   Publishing type:Research paper (bulletin of university, research institution)  

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  • Spatial and reconfigurable control of photoluminescence from single-layer MoS2 using a strained VO2-based Fabry–Pérot cavity

    Koyo Nakayama, Shota Toida, Takahiko Endo, Mitsuru Inada, Shingo Sato, Hiroshi Tani, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Yasumitsu Miyata, Kazunari Matsuda, Mahito Yamamoto

    Applied Physics Letters   125 ( 22 )   2024.11

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    Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    We investigated the photoluminescence (PL) from single-layer MoS2 on VO2 platelets grown on SiO2, where the insulating and metallic phases can coexist above a bulk transition temperature of 340 K, due to the inhomogeneous strain. We found that the intensity of PL from MoS2 on metallic VO2 is higher than that on the insulating counterpart, resulting in spatially varying PL even at the sub-micrometer scale. In contrast to the intensity, the PL peak energies were observed to be nearly identical on insulating and metallic VO2, indicating that the influences of charge transfer, strain, and dielectric screening on MoS2 are comparable, regardless of the phase state. Thus, the observed difference in PL intensity is due to the difference in refractive indices of insulating and metallic VO2, leading to the phase-dependent Fabry–Pérot interference effect. We performed numerical simulations for the emission from MoS2 supported on the VO2-based Fabry–Pérot interferometer. The calculated emission intensity ratio on insulating and metallic VO2 well reproduces the experimental observations. These results suggest a strategy for controlling PL from two-dimensional semiconductors in a spatial and reconfigurable manner.

    DOI: 10.1063/5.0236517

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  • A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

    Meng-Yu Tsai, Chia-Tse Huang, Che-Yi Lin, Mu-Pai Lee, Feng-Shou Yang, Mengjiao Li, Yuan-Ming Chang, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Wen-Wei Wu, Mahito Yamamoto, Jiunn-Lin Wu, Po-Wen Chiu, Yen-Fu Lin

    Nature Electronics   6 ( 10 )   755 - 764   2023.9

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/s41928-023-01034-7

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    Other Link: https://www.nature.com/articles/s41928-023-01034-7

  • Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering

    Che-Yi Lin, Mu-Pai Lee, Yuan-Ming Chang, Yi-Tang Tseng, Feng-Shou Yang, Mengjiao Li, Jiann-Yeu Chen, Ciao-Fen Chen, Meng-Yu Tsai, Yi-Chun Lin, Keiji Ueno, Mahito Yamamoto, Shun-Tsung Lo, Chen-Hsin Lien, Po-Wen Chiu, Kazuhito Tsukagoshi, Wen-Wei Wu, Yen-Fu Lin

    ACS Applied Materials & Interfaces   14 ( 36 )   41156 - 41164   2022.8

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acsami.2c07679

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  • Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with <i>in situ</i> optically observable metallic domains

    Shingo Genchi, Mahito Yamamoto, Takuya Iwasaki, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama, Hidekazu Tanaka

    Applied Physics Letters   120 ( 5 )   2022.1

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    Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    Vanadium dioxide (VO2) thin films grown on hexagonal boron nitride (hBN) flakes show three orders of magnitude resistance change due to metal–insulator transition (MIT). The MIT property of VO2 thin films is strongly dependent on the metallic domain size, which should be identified to derive the resistance change owing to the single metallic domain. In this study, we investigated the relationship between the metallic domain size and the device-size-dependent MIT property of VO2 thin films grown on hBN. We observed by temperature-dependent Raman spectroscopy and optical microscopy the emergence of the metallic domains and determined the metallic domain size in VO2 thin films grown on hBN. The metallic domain size of the VO2 thin films grown on hBN was determined to be ∼500 nm on average in length and up to sub-micrometer scale. Electric transport measurements revealed that VO2/hBN microwires exhibit multi-level step-like resistivity changes that change by one to two orders when the length and width are ∼2 μm owing to the confined metallic domains in the micrometer scale. Our results open a way for VO2 devices, showing a steep and large resistance change even in the micrometer scale.

    DOI: 10.1063/5.0072746

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  • Electrostatic potential measurement at the Pt/TiO2 interface using electron holography

    Hiroshi Nakajima, Toshiaki Tanigaki, Takaaki Toriyama, Mahito Yamamoto, Hidekazu Tanaka, Yasukazu Murakami

    Journal of Applied Physics   129 ( 17 )   174304 - 174304   2021.5

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    Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/5.0046501

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  • Barrier Formation at the van der Waals Contacts of Vanadium Dioxide and Transition Metal Dichalcogenides Reviewed

    Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Shu Nakaharai, Azusa Hattori, Kenji Watanabe, Takashi Taniguchi, Yutaka Wakayama, Keiji Ueno, Hidekazu Tanaka

    ACS Applied Materials & Intefaces   11   36871 - 36879   2019.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.9b13763

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  • Broad range thickness identification of hexagonal boron nitride by colors Reviewed

    Yuto Anzai, Mahito Yamamoto, Shingo Genchi, Kenji Watanabe, Takashi Taniguchi, Shuhei Ichikawa, Yasufumi Fujiwara, Hidekazu Tanaka

    Applied Physics Express   12 ( 5 )   055007   2019.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1882-0786/ab0e45

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  • Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates Reviewed

    Shingo Genchi, Mahito Yamamoto, Koji Shigematsu, Shodai Aritomi, Ryo Nouchi, Teruo Kanki, Kenji Watanabe, Takashi Taniguchi, Yasukazu Murakami, Hidekazu Tanaka

    Scientific Reports   9 ( 1 )   3857   2019.2

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  • Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor Reviewed

    Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Azusa N Hattori, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Hidekazu Tanaka

    ACS applied materials & interfaces   11 ( 3 )   3224 - 3230   2019.1

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  • Correlation between Ni Valence and Resistance Modulation on a SmNiO3 Chemical Transistor Reviewed

    Daiki Kawamoto, Azusa N Hattori, Mahito Yamamoto, Xin Liang Tan, Ken Hattori, Hiroshi Daimon, Hidekazu Tanaka

    ACS Applied Electronic Materials   1 ( 1 )   82 - 87   2018.12

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  • Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides Reviewed

    Das Soumya Ranjan, Wakabayashi Katsunori, Yamamoto Mahito, Tsukagoshi Kazuhito, Dutta Sudipta

    JOURNAL OF PHYSICAL CHEMISTRY C   122 ( 29 )   17001 - 17007   2018.7

  • Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer Reviewed

    Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi

    Applied Physics Letters   112 ( 18 )   2018.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.5030525

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  • Virtual substrate method for nanomaterials characterization Reviewed

    Bo Da, Jiangwei Liu, Mahito Yamamoto, Yoshihiro Ueda, Kazuyuki Watanabe, Nguyen Thanh Cuong, Songlin Li, Kazuhito Tsukagoshi, Hideki Yoshikawa, Hideo Iwai, Shigeo Tanuma, Hongxuan Guo, Zhaoshun Gao, Xia Sun, Zejun Ding

    NATURE COMMUNICATIONS   8   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/ncomms15629

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  • Measuring the Complex Optical Conductivity of Graphene by Fabry-Perot Reflectance Spectroscopy Reviewed

    Behnood G. Ghamsari, Jacob Tosado, Mahito Yamamoto, Michael S. Fuhrer, Steven M. Anlage

    SCIENTIFIC REPORTS   6   2016.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/srep34166

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  • Carrier Polarity Control in alpha-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning Reviewed

    Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi

    ACS APPLIED MATERIALS & INTERFACES   8 ( 23 )   14732 - 14739   2016.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.6b02036

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  • Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts Reviewed

    Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi

    NANO LETTERS   16 ( 4 )   2720 - 2727   2016.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.nanolett.6b00390

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  • Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors Reviewed

    Yen-Fu Lin, Yong Xu, Che-Yi Lin, Yuen-Wuu Suen, Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi

    ADVANCED MATERIALS   27 ( 42 )   6612 - +   2015.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.201502677

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  • Electrostatically Reversible Polarity of Ambipolar alpha-MoTe2 Transistors Reviewed

    Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen-Fu Lin, Song-Lin Li, Kazuhito Tsukagoshi

    ACS NANO   9 ( 6 )   5976 - 5983   2015.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsnano.5b00736

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  • Double resonance Raman modes in monolayer and few-layer MoTe2 Reviewed

    Huaihong Guo, Teng Yang, Mahito Yamamoto, Lin Zhou, Ryo Ishikawa, Keiji Ueno, Kazuhito Tsukagoshi, Zhidong Zhang, Mildred S. Dresselhaus, Riichiro Saito

    PHYSICAL REVIEW B   91 ( 20 )   2015.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.91.205415

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  • Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2 Reviewed

    Mahito Yamamoto, Sudipta Dutta, Shinya Aikawa, Shu Nakaharai, Katsunori Wakabayashi, Michael S. Fuhrer, Keiji Ueno, Kazuhito Tsukagoshi

    NANO LETTERS   15 ( 3 )   2067 - 2073   2015.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nl5049753

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  • Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers Reviewed

    Song-Lin Li, Katsuyoshi Komatsu, Shu Nakaharai, Yen-Fu Lin, Mahito Yamamoto, Xiangfeng Duan, Kazuhito Tsukagoshi

    ACS NANO   8 ( 12 )   12836 - 12842   2014.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nn506138y

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  • Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier Reviewed

    Katsuyoshi Komatsu, Shinya Kasai, Song-Lin Li, Shu Nakaharai, Nobuhiko Mitoma, Mahito Yamamoto, Kazuhito Tsukagoshi

    APPLIED PHYSICS EXPRESS   7 ( 8 )   2014.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.7.085101

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  • Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits Reviewed

    Yen-Fu Lin, Yong Xu, Sheng-Tsung Wang, Song-Lin Li, Mahito Yamamoto, Alex Aparecido-Ferreira, Wenwu Li, Huabin Sun, Shu Nakaharai, Wen-Bin Jian, Keiji Ueno, Kazuhito Tsukagoshi

    ADVANCED MATERIALS   26 ( 20 )   3263 - +   2014.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.201305845

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  • Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2 Reviewed

    Mahito Yamamoto, Sheng Tsung Wang, Meiyan Ni, Yen-Fu Lin, Song-Lin Li, Shinya Aikawa, Wen-Bin Jian, Keiji Ueno, Katsunori Wakabayashi, Kazuhito Tsukagoshi

    ACS NANO   8 ( 4 )   3895 - 3903   2014.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/nn5007607

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  • Anisotropic Etching of Atomically Thin MoS2 Reviewed

    Mahito Yamamoto, Theodore L. Einstein, Michael S. Fuhrer, William G. Cullen

    JOURNAL OF PHYSICAL CHEMISTRY C   117 ( 48 )   25643 - 25649   2013.12

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    DOI: 10.1021/jp410893e

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  • "The Princess and the Pea" at the Nanoscale: Wrinkling and Delamination of Graphene on Nanoparticles Reviewed

    Mahito Yamamoto, Olivier Pierre-Louis, Jia Huang, Michael S. Fuhrer, Theodore L. Einstein, William G. Cullen

    PHYSICAL REVIEW X   2 ( 4 )   2012.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevX.2.041018

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  • Charge Inhomogeneity Determines Oxidative Reactivity of Graphene on Substrates Reviewed

    Mahito Yamamoto, Theodore L. Einstein, Michael S. Fuhrer, William G. Cullen

    ACS NANO   6 ( 9 )   8335 - 8341   2012.9

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    DOI: 10.1021/nn303082a

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  • Modeling noncontact atomic force microscopy resolution on corrugated surfaces Reviewed

    Kristen M. Burson, Mahito Yamamoto, William G. Cullen

    BEILSTEIN JOURNAL OF NANOTECHNOLOGY   3   230 - 237   2012.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3762/bjnano.3.26

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  • HIGH RESOLUTION MICROSCOPY OF SIO2 AND THE STRUCTURE OF SIO2-SUPPORTED GRAPHENE Reviewed

    Kristen M. Burson, Mahito Yamamoto, William G. Cullen

    PROCEEDINGS OF THE ASME INTERNATIONAL DESIGN ENGINEERING TECHNICAL CONFERENCES AND COMPUTERS AND INFORMATION IN ENGINEERING CONFERENCE, VOL 7   551 - 555   2012

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1115/DETC2011-48737

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  • High-Fidelity Conformation of Graphene to SiO2 Topographic Features Reviewed

    W. G. Cullen, M. Yamamoto, K. M. Burson, J. H. Chen, C. Jang, L. Li, M. S. Fuhrer, E. D. Williams

    PHYSICAL REVIEW LETTERS   105 ( 21 )   215504   2010.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevLett.105.215504

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  • Anomalous decay of multilayer holes on SrTiO3(001) Reviewed

    Mahito Yamamoto, Koichi Sudoh, Hiroshi Iwasaki, Ellen D. Williams

    PHYSICAL REVIEW B   82 ( 11 )   2010.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.82.115436

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  • Decay of multilayer holes on SrTiO3(001) Reviewed

    M. Yamamoto, K. Sudoh, H. Iwasaki

    SURFACE SCIENCE   601 ( 5 )   1255 - 1258   2007.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.susc.2006.12.036

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Books

  • 半導体・磁性体・電池の固/固界面制御と接合・積層技術

    山本 真人( Role: Contributor第3節 2次元半導体応用のための界面・表面制御)

    S&T出版  2024.6 

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  • System-Materials Nanoarchitectonics

    Mahito Yamamoto, Kazuhito Tsukagoshi( Role: ContributorGrowth and Electronic and Optoelectronic Applications of Surface Oxides on Atomically Thin WSe2)

    Springer Nature  2022 

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  • 酸化物・原子層物質ハイブリッドによる新奇デバイスの創製

    山本 真人, 田中 秀和

    金属  2018.2 

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  • Frontier of Layered Chalcogenide Materials Research

    Mahito Yamamoto( Role: ContributorChapter 8 Raman Spectroscopy of Transition Metal Dichalcogenides)

    CMC Publishing Co.,Ltd  2016.7 

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Presentations

  • Transfer characteristics of transition metal dichalcogenide transistors with VO2 contacts

    YAMAMOTO,Mahito, NOUCHI, RYO, KANKI, Teruo, NAKAHARAI, Shu, HATTORI, Azusa, WATANABE, Kenji, TANIGUCHI, Takashi, WAKAYAMA, Yutaka, UENO, Keiji, TANAKA, Hidekazu

    Recent Progress on Graphene and 2D Materials Research 2019  2019.10 

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  • Phase transition FETs based on two-dimensional WSe2 with VO2 contacts

    YAMAMOTO,Mahito, NOUCHI, Ryo, KANKI, Teruo, NAKAHARAI, Shu, HATTORI, Azusa, WATANABE, Kenji, TANIGUCHI, Takashi, WAKAYAMA, Yutaka, UENO, Keiji, TANAKA, Hidekazu

    26th INTERNATIONAL WORKSHOP ON OXIDE ELECTRONICS  2019.10 

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    Venue:Kyoto, Japan  

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  • Carrier injection from VO2 into MoS2 and WSe2

    YAMAMOTO,Mahito, NOUCHI, Ryo, KANKI, Teruo, HATTORI, Azusa, WATANABE, Kenji, TANIGUCHI, Takashi, UENO, Keiji, TANAKA, Hidekazau

    2019 Annual Meeting of the Physical Society of Taiwan  2019.1 

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    Venue:Hsinchu, Taiwan  

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  • Steep-slope transistors based on 2D semiconductors contacted with the phase-change material VO2

    YAMAMOTO,Mahito, KANKI, Teruo, HATTORI, Azusa, NOUCHI, Ryo, WATANEBE, Kenji, TANIGUCHI, Takashi, UENO, Keiji, TANAKA, Hidekazau

    2018 MRS Spring Meeting and Exhibit  2018.4 

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    Venue:Phoenix, USA  

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  • Non-thermionic switching in an atomically thin WSe2 transistor with the phase-change material VO2 contact

    YAMAMOTO,Mahito, KANKI, Teruo, HATTORI, Azusa, NOUCHI, Ryo, WATANABE, Kenji, TANIGUCHI, Takashi, UENO, Keiji, TANAKA, Hidekazau

    APS March Meeting  2018.3 

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    Venue:Los Angeles, USA  

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Awards

  • 39th Japan Society of Applied Physics Young Scientist Presentation Award

    2016.3   Japan Society of Applied Physics   Thickness-controlled oxidation of atomically thin WSe2

    Mahito Yamamoto

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Research Projects

  • Two-dimensional semiconductor FET with a strongly correlated gate

    Grant number:24H01206  2024.4 - 2026.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

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    Grant amount:\7020000 ( Direct Cost: \5400000 、 Indirect Cost:\1620000 )

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  • van der Waals heterostructure devices based on two-dimensional correlated oxides

    Grant number:22H05472  2022.6 - 2024.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

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    Grant amount:\6760000 ( Direct Cost: \5200000 、 Indirect Cost:\1560000 )

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  • Monolithic phase change oscillator network based on two-dimensional materials

    Grant number:22K18816  2022.6 - 2024.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Research (Exploratory)

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    Grant amount:\6370000 ( Direct Cost: \4900000 、 Indirect Cost:\1470000 )

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  • Synthesis of Ultrathin Functional Oxides Using Atomically Thin Transition Metal Dichalcogenides as Oxidation Precursors

    Grant number:23K23182  2022.4 - 2026.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Grant amount:\17290000 ( Direct Cost: \13300000 、 Indirect Cost:\3990000 )

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  • 神経模倣コンピュータ応用に向けた超低消費電力二次元材料不揮発性メモリの創出

    2022 - 2024

    科学技術振興機構  国際的な科学技術共同研究などの推進 国際科学技術協力基盤整備事業 台湾 

    山本 真人

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    Authorship:Principal investigator 

    本研究は、将来的な神経模倣コンピュータへの応用展開を視野に入れ、二次元材料を基盤とする超低消費電力不揮発性メモリの創出を目指すものである。日本側チームは欠陥制御された二次元材料を用いた電荷トラップメモリ、および超低消費電力性を有するトンネル電界効果トランジスタ(FET)の開発を主に行う。一方、台湾側チームは化学制御された二次元材料トラップを用いたメモリの開発とトンネルFETの低消費電力動作実証を行う。各チームの研究によって得られた知見や技術を共有・統合することで、神経模倣コンピュータ実装に資する超低消費電力電荷トラップメモリの効果的開発とそのシナプスデバイス集積化を推進する。両チームによる共同研究を通して、二次元材料メモリに基づく神経模倣コンピュータの将来的な実用展開が期待される。

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  • Boosting the performance of monolithic phase change transistors and their logic applications

    2019.4 - 2021.3

    Japan Society for the Promotion of Science  Grant-in-Aid for Scientific Research 

    Mahito Yamamoto

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    Authorship:Principal investigator  Grant type:Competitive

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  • Correlated oxides/atomically thin semiconductors heterostructures for steep-slope transistors applications

    2017.4 - 2019.3

    Japan Society for the Promotion of Science  Grant-in-Aid for Scientific Research 

    Mahito Yamamoto

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    Authorship:Principal investigator  Grant type:Competitive

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Social Activities

  • 応用物理学会トータルバイオミメティクス研究グループ庶務幹事

    2020

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  • Nature Publishing Group Scientific Reports, Editorial Board Member

    2019

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  • The 16th International Symposium on Sputtering & Plasma Process 実行委員

    2019

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