Updated on 2026/02/18

写真a

 
HONDA Shuta
 
Organization
Faculty of Engineering Science Professor
Title
Professor
External link

Professional Memberships

Committee Memberships

  •   編集委員  

    2017.6 - 2020.3   

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  •   論文委員  

    2015.6 - 2017.5   

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Papers

  • Domain wall diode in ferromagnetic pillars with asymmetrically stacked perpendicular anisotropy

    Syuta Honda, Hiroto Naka, Riku Imamura, Hiroyoshi Itoh, Yoshiaki Sonobe, Tomokatsu Ohsawa

    Journal of Physics D: Applied Physics   2026.1

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ae2c08

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  • Magnetic structure of high-order skyrmion number produced in a nanodisk via micromagnetic simulation with long-range dipole-dipole interaction

    Syuta Honda, Hideto Tsuzuki, Hiroyoshi Itoh, Tomokatsu Ohsawa

    Physical Review B   2025.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/rq13-j8w5

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  • Signature of Dirac Fermion injection from hole-doped graphene into two-dimensional semiconductors Reviewed

    Sei Hosomi, Shuta Honda, Mitsuru Inada, Shingo Sato, Hiroshi Tani, Takashi Taniguchi, Kenji Watanabe, Keiji Ueno, Mahito Yamamoto

    Science and Technology Reports of Kasai University   67   13 - 19   2025.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.32286/0002002557

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  • Multi-bit magnetic memory based on magnetic multilayer pillars with a two-terminal structure

    Syuta Honda, Yoshiaki Sonobe

    IEEE Transactions on Magnetics   2025

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TMAG.2025.3619473

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  • Multi-bit magnetic memory based on domain wall motion in a vertical nanopillar with two perpendicularly magnetized pinning layers

    Syuta Honda, Hiroyoshi Itoh, Yoshiaki Sonobe

    IEEE Transactions on Magnetics   2025

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TMAG.2025.3611334

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  • Interconnected skyrmions in a nanowire structure: Micromagnetic simulations Reviewed

    Taichi Nishitani, Syuta Honda, Hiroyoshi Itoh, Tomokatsu Ohsawa, Masaaki A. Tanaka

    Physical Review B   inpress   2024.11

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.110.174415

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  • Single current control of magnetization in vertical high-aspect-ratio nanopillars on in-plane magnetization layers Reviewed

    Syuta Honda, Yoshiaki Sonobe

    Journal of Physics D: Applied Physics   2024.8

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    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ad4a85

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  • Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions Reviewed

    Syuta Honda, Yoshiaki Sonobe

    Journal of Physics D: Applied Physics   2024.4

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    DOI: 10.1088/1361-6463/ad2120

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  • Thermoelectric properties of sintered Ba2AgSi3 crystals and search for impurities to control conductivity type by first-principles calculation Reviewed

    K. Kajihara, Y. Koda, T. Ishiyama, S. Aonuki, K. Toko, S. Honda, M. Mesuda, T. Suemasu

    Journal of Applied Physics   2024.2

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0190025

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  • Connected-Skyrmions-Based Racetrack Memory Reviewed

    Taichi Nishitani, Syuta Honda, Hiroyoshi Itoh

    2023 IEEE International Magnetic Conference (INTERMAG)   2023-May   2023.10

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    Authorship:Corresponding author   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/INTERMAG50591.2023.10265067

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  • Control of conductivity in Fe-rich cobalt-ferrite thin films with perpendicular magnetic anisotropy Reviewed

    Masaya Morishita, Tomoyuki Ichikawa, Masaaki A. Tanaka, Motoharu Furuta, Daisuke Mashimo, Syuta Honda, Jun Okabayashi, Ko Mibu

    Physical Review Materials   7 ( 5 )   2023.5

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.7.054402

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  • Generation of spin-polarized electronic currents using perpendicularly magnetized cobalt ferrite spin-filtering barriers grown on spinel-type-conductive layers Reviewed

    Masaaki Tanaka, Motoharu Furuta, Tomoyuki Ichikawa, Masaya Morishita, Yu-Min Hung, Syuta Honda, Teruo Ono, Ko Mibu

    Applied Physics Letters   2023.1

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0131390

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  • Correlation between interlayer exchange coupling and domain wall velocity in multilayered magnetic wires Reviewed

    Takafumi Suzuki, Masaaki Tanaka, Tatsuro Ohmasa, Shunsuke Honda, Syuta Honda, Hiroyuki Awano, Ko Mibu

    Journal of Magnetism and Magnetic Materials   565   2023.1

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jmmm.2022.170218

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  • Design of a novel bilayered structure of ferromagnetic metal and nonmagnetic insulator wires while maintaining the distance between the constituent skyrmions Reviewed

    Masataka Kato, Tomokatsu Ohsawa, Syuta Honda

    Journal of Physics D: Applied Physics   55 ( 47 )   2022.11

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    Authorship:Last author   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/ac941d

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  • Anisotropic magnetoresistance in Mn<inf>4- x </inf>Ni <inf>x</inf>N and the change in the crystalline field Reviewed

    Taro Komori, Haruka Mitarai, Tomohiro Yasuda, Sambit Ghosh, Laurent Vila, Jean Philippe Attané, Syuta Honda, Takashi Suemasu

    Journal of Applied Physics   132 ( 14 )   2022.10

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0107172

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  • Realization of efficient tuning of the Fermi level in iron-based ferrimagnetic alloys Reviewed

    N. Yamashita, E. Shigematsu, S. Honda, R. Ohshima, M. Shiraishi, Y. Ando

    Physical Review Materials   6 ( 10 )   2022.10

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.6.104405

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  • Spin-orbit torque assisted magnetization reversal of 100 nm-long vertical pillar Reviewed

    Syuta Honda, Yoshiaki Sonobe

    Journal of Physics D: Applied Physics   2022.9

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    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)   Publisher:{IOP} Publishing  

    DOI: 10.1088/1361-6463/ac80dd

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  • Ferrimagnetic-ferromagnetic phase transition in Mn<inf>4</inf>N films favored by non-magnetic in doping Reviewed

    Tomohiro Yasuda, Taro Komori, Haruka Mitarai, Syuta Honda, Sambit Ghosh, Laurent Vila, Jean Philippe Attané, Kenta Amemiya, Takashi Suemasu

    Journal of Physics D: Applied Physics   55 ( 11 )   2022.3

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    Publishing type:Research paper (scientific journal)   Publisher:{IOP} Publishing  

    DOI: 10.1088/1361-6463/ac3e90

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  • DEPTH-DEPENDENCE OF MAGNETIZATION AT A FERROMAGNET EDGE UNDER THE INTERFACIAL DZYALOSHINSKII-MORIYA INTERACTION Reviewed

    KAIYA Yuki, HONDA Syuta, ITOH Hiroyoshi, OHSAWA Tomokatsu

    Science and Technology Reports of Kansai University   ( 64 )   2022.3

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  • SPIN INJECTION INTO FERROMAGNETIC METAL FROM HEAVY METAL OWING TO SPIN HALL EFFECT Reviewed

    YAMAKI Yoshikazu, HONDA Syuta, ITOH Hiroyoshi

    Science and Technology Reports of Kansai University   ( 64 )   2022.3

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  • Oblique drive tolerance of elliptical skyrmions moving in perpendicularly magnetized nanowire Reviewed

    Yuki Kaiya, Shota Nishiyama, Syuta Honda, Hiroyoshi Itoh, Tomokatsu Ohsawa

    Journal of Physics D: Applied Physics   55 ( 7 )   075001 - 075001   2022.2

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    DOI: 10.1088/1361-6463/ac3454

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  • Transition metal nitrides and their mixed crystals for spintronics Reviewed

    Keita Ito, Syuta Honda, Takashi Suemasu

    NANOTECHNOLOGY   33 ( 6 )   062001 - 062001   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6528/ac2fe4

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  • Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi Reviewed

    K. Kudo, M. Yamada, S. Honda, Y. Wagatsuma, S. Yamada, K. Sawano, K. Hamaya

    Applied Physics Letters   118 ( 16 )   162404 - 162404   2021.4

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    Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/5.0045233

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  • Transforming domain motion for 3D racetrack memory with perpendicular magnetic anisotropy Reviewed

    Syuta Honda, Yoshiaki Sonobe, Simon John Greaves

    Journal of Physics D: Applied Physics   54 ( 13 )   135002 - 135002   2021.4

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    DOI: 10.1088/1361-6463/abd060

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  • Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode Reviewed

    Shoma Yasui, Syuta Honda, Jun Okabayashi, Takashi Yanase, Toshihiro Shimada, Taro Nagahama

    Physical Review Applied   15 ( 3 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.15.034042

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  • Enhancement of low-frequency spin-orbit-torque ferromagnetic resonance signals by frequency tuning observed in Pt/Py, Pt/Co, and Pt/Fe bilayers Reviewed

    Motomi Aoki, Ei Shigematsu, Masayuki Matsushima, Ryo Ohshima, Syuta Honda, Teruya Shinjo, Masashi Shiraishi, Yuichiro Ando

    AIP Advances   11 ( 2 )   025206 - 025206   2021.2

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    Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/9.0000066

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  • Magnetic Domain With Straight Domain Walls Passing Through a Ferromagnetic Insulator for a Continuously Looped Racetrack Memory Reviewed

    Syuta Honda, Yuki Kaiya, Hiroyoshi Itoh, Tomokatsu Ohsawa

    IEEE Transactions on Magnetics   57 ( 2 )   1 - 5   2021.2

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    Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers ({IEEE})  

    DOI: 10.1109/TMAG.2020.3010328

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  • In-plane spin-orbit torque magnetization switching and its detection using sub-GHz spin rectification effect Reviewed

    M. Aoki, E. Shigematsu, M. Matsushima, R. Ohshima, S. Honda, T. Shinjo, M. Shiraishi, and Y. Ando

    Physical Review B   in press ( 17 )   2020.11

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    Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.102.174442

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.174442/fulltext

  • Current-induced linear motion of antiferromagnetically coupled skyrmion-like bubble domains stabilized without Dzyaloshinskii-Moriya interaction Reviewed

    Syuta Honda, Takamasa Sugahara, Masaaki Tanaka

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   53 ( 43 )   2020.10

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/1361-6463/aba14f

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  • Magnetic compensation at two different composition ratios in rare-earth-free Mn4-xCoxN ferrimagnetic films Reviewed

    Haruka Mitarai, Taro Komori, Taku Hirose, Keita Ito, Sambit Ghosh, Syuta Honda, Kaoru Toko, Laurent Vila, Jean-Philippe Attan, Kenta Amemiya, Takashi Suemasu

    PHYSICAL REVIEW MATERIALS   4 ( 9 )   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.4.094401

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  • Stabilization of Neel-type domain walls in multilayered magnetic wires using antiferromagnetic interlayer exchange coupling Reviewed

    Masaaki Tanaka, Musashi Shimazaki, Tatsuro Ohmasa, Takafumi Suzuki, Shunsuke Honda, Syuta Honda, Hiroyuki Awano, Ko Mibu

    JOURNAL OF APPLIED PHYSICS   128 ( 6 )   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0013481

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  • Influence of an edge magnetization on an internal magnetic domain in one-dimensional ferromagnetic nanowires with the interfacial Dzyaloshinskii-Moriya interaction Reviewed

    Yuki Kaiya, Syuta Honda, Hiroyoshi Itoh, Tomokatsu Ohsawa

    Transaction of the Magnetics Society of Japan (Special Issues)   vol. 4, pp. 23-26   2020.5

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  • Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaS i2 passivated with atomic hydrogen Reviewed

    Zhihao Xu, Denis A. Shohonov, Andrew B. Filonov, Kazuhiro Gotoh, Tianguo Deng, Syuta Honda, Kaoru Toko, Noritaka Usami, Dmitri B. Migas, Victor E. Borisenko, Takashi Suemasu

    Physical Review Materials   3 ( 6 )   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.3.065403

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  • Water circulation induced by mechanical aerators in a rectangular vessel for shrimp aquaculture

    Tomoaki Itano, Taishi Inagaki, Choji Nakamura, Ren Hashimoto, Naohiro Negoro, Jinsuke Hyodo, Syuta Honda

    AQUACULTURAL ENGINEERING   85   106 - 113   2019.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.aquaeng.2019.03.006

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  • Perpendicular magnetic anisotropy and tunneling conductivity of epitaxial cobalt-ferrite (0 0 1) films grown on nonmagnetic metal films Reviewed

    Katsuyoshi Naruse, Masaaki Tanaka, Kosuke Nomura, Takuya Taniguchi, Takuya Taniguchi, Syuta Honda, Syuta Honda, Teruo Ono, Teruo Ono, Ko Mibu

    Journal of Magnetism and Magnetic Materials   475   721 - 726   2019.4

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jmmm.2018.12.025

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  • Skyrmion-Based Racetrack Memory With Continuous Loop Built From Ferromagnetic Metal and Insulator Reviewed

    Syuta Honda, Takahiro Yae, Tomokatsu Ohsawa

    IEEE Transactions on Magnetics   55 ( 2 )   1 - 4   2019.2

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    Authorship:Lead author, Corresponding author   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers ({IEEE})  

    DOI: 10.1109/TMAG.2018.2866500

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  • Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices Reviewed

    Mizue Ishikawa, Makoto Tsukahara, Syuta Honda, Yuichi Fujita, Michihiro Yamada, Yoshiaki Saito, Takashi Kimura, Hiroyoshi Itoh, Kohei Hamaya

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   52 ( 8 )   085102 - 085102   2019.2

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    DOI: 10.1088/1361-6463/aaf37c

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  • Current-induced motion of bubble domains stabilised in nanowires with edge defects Reviewed

    Syuta Honda, Ryoji Takashima, Masaaki Tanaka

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   52 ( 2 )   025001 - 025001   2019.1

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    DOI: 10.1088/1361-6463/aae8cd

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  • Micromagnetic Study for Racetrack Memory with Continuous Loop

    S. Honda

    vol. 118, MRIS2018-16, pp. 15 - 20   2018.10

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  • Transition from minority to majority spin transport in iron-manganese nitride Fe4-xMnxN films with increasing x Reviewed

    Anzai Akihito, Gushi Toshiki, Komori Taro, Honda Syuta, Isogami Shinji, Suemasu Takashi

    JOURNAL OF APPLIED PHYSICS   124 ( 12 )   2018.9

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    DOI: 10.1063/1.5051721

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  • Magnetic properties and electronic state of Mo x Fe3−x O4 ferrites Reviewed

    Y Hisamatsu, S Honda, S Sharmin, J Inoue, E Kita, H Yanagihara

    Materials Research Express   5 ( 8 )   086103 - 086103   2018.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:{IOP} Publishing  

    DOI: 10.1088/2053-1591/aad14b

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  • Electronic states in single-layer molybdenum disulfide substitutional-doped chromium atoms with 2H, it and distorted-it phase structure Reviewed

    Syuta Honda, Naoki Yokoyama

    Technology Reports of Kansai University   2018-March ( 60 )   7 - 13   2018.3

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  • Watar circulation driven by a paddle-wheel aerator in a rectangular reservoir

    Tomoaki Itano, Taishi Inagaki, Choji Nakamura, Ren Hashimoto, Naohiro Negoro, Syuta Honda, Jinsuke Hyodo

    Technology Reports of Kansai University   2018-March ( 60 )   15 - 22   2018.3

  • Magnetic domain walls in nanostrips of single-crystalline Fe4N(001) thin films with fourfold in-plane magnetic anisotropy Reviewed

    Keita Ito, Nicolas Rougemaille, Stefania Pizzini, Syuta Honda, Norio Ota, Takashi Suemasu, Olivier Fruchart

    JOURNAL OF APPLIED PHYSICS   121 ( 24 )   2017.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4989991

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  • Electric-current-induced dynamics of bubble domains in a ferrimagnetic Tb/Co multilayer wire below and above the magnetic compensation point Reviewed

    Masaaki Tanaka, Sho Sumitomo, Noriko Adachi, Syuta Honda, Hiroyuki Awano, Ko Mibu

    AIP ADVANCES   7 ( 5 )   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4974067

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  • Robust spin-current injection in lateral spin valves with two-terminal Co2FeSi spin injectors Reviewed

    S. Oki, T. Kurokawa, S. Honda, S. Yamada, T. Kanashima, H. Itoh, K. Hamaya

    AIP ADVANCES   7 ( 5 )   2017.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4972852

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  • Electric-current-induced dynamics of bubble domains in ferrimagnetic Tb/Co multilayer wires below and above the magnetic compensation point

    Tanaka M. A, Sumitomo S, Hamada H, Honda S, Awano H, Mibu K

    Meeting Abstracts of the Physical Society of Japan   72 ( 0 )   1189 - 1189   2017

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    Language:Japanese   Publisher:一般社団法人 日本物理学会  

    &lt;p&gt;プラチナ層と接する垂直磁化フェリ磁性体多層膜Tb/Coの{Tb/Co}_7_/Pt細線上にバブル磁区を生成し,電流印加による挙動を調べた.電流印加によりバブル磁区は細線の端方向への傾斜をもって成長した.フェリ磁性体の磁化の主体となる原子がTbとCoの場合で傾斜方向が逆になることがわかった.プラチナ層からのスピンホール効果を考慮したマイクロマグネティスシミュレーションでも同様の結果が得られ,このバブル磁区の傾斜はスピンホール効果によって説明できることがわかった&lt;/p&gt;

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  • Micromagnetic investigations of Néel- and Bloch-type skyrmion dynamics induced by spin Hall effect of cap layers Reviewed

    Syuta Honda, Tanaka Masaaki

    Japanese Journal of Applied Physics   56 ( 9 )   2017

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    DOI: 10.7567/JJAP.56.098001

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  • MR effect in MTJ with ferromagnetic insulator

    左手宏毅, 伊藤博介, 伊藤博介, 本多周太

    日本磁気学会論文特集号(Web)   1 ( 2 )   88‐92(J‐STAGE) - 92   2017

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    Language:Japanese   Publisher:The Magnetics Society of Japan  

    <p>  We calculated the conductance and magnetoresistance (MR) ratio in the ferromagnetic metal/ non-magnetic metal/ ferromagnetic insulator/ non-magnetic metal junction by using a free electron model. The spin-filter in the ferromagnetic insulator results in the MR effect. The value of the MR ratio oscillates as the thickness of the non-magnetic metal layer is increased. The period of the oscillation is given by the Fermi wave length of the non-magnetic metal and therefore the oscillation is caused by the interference of the electron wave function in the non-magnetic metal. The extremum of the MR ratio saturates as the insulator thickness is increased. This saturated value does not depend on the material parameters of the ferromagnetic insulator if the insulator is sufficiently thick. Furthermore, the dispersion of the MR ratio originating from the unevenness in the thickness of the non-magnetic metal layer, which could occur during fabrication, is suppressed by using the non-magnetic metal with longer Fermi wave length.</p>

    DOI: 10.20819/msjtmsj.17TR118

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  • Magnetic properties and interfacial characteristics of all-epitaxial Heusler-compound stacking structures Reviewed

    S. Yamada, S. Honda, J. Hirayama, M. Kawano, K. Santo, K. Tanikawa, T. Kanashima, H. Itoh, K. Hamaya

    Physical Review B   94 ( 9 )   094435-1 - 094435-7   2016.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society  

    DOI: 10.1103/PhysRevB.94.094435

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  • Electrical detection of magnetic domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect Reviewed

    Toshiki Gushi, Keita Ito, Soma Higashikozono, Fumiya Takata, Hirotaka Oosato, Yoshimasa Sugimoto, Kaoru Toko, Syuta Honda, Takashi Suemasu

    JOURNAL OF APPLIED PHYSICS   120 ( 11 )   2016.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4962721

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  • Controlling magnetic domain wall positions with an external magnetic field and a low spin-polarized current in chamfered L-shaped ferromagnetic thin ribbons Reviewed

    Syuta Honda, Daiki Yamamoto, Tomokatsu Ohsawa, Toshiki Gushi, Keita Ito, Takashi Suemasu

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   49 ( 38 )   2016.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0022-3727/49/38/385002

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  • Computing surface Green's functions for semi-infinite systems on multilayered periodic structures Reviewed

    Takafumi Miyata, Ryohei Naito, Syuta Honda

    JOURNAL OF ENGINEERING MATHEMATICS   97 ( 1 )   25 - 32   2016.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s10665-015-9794-x

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  • Effect of the sigma-band of graphene on an electric current in metal/graphene/metal junctions Reviewed

    Syuta Honda

    Technology Reports of Kansai University   ( 58 )   9 - 13   2016.3

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  • First-principles study of energy band gap of single-layer Mo1-xCrxS2 Reviewed

    Akiko Ueda, Syuta Honda, Hiroshi Imamura

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 2 )   2016.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.028003

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  • Control of domain wall position in L-shaped Fe&lt;inf&gt;4&lt;/inf&gt;N negatively spin polarized ferromagnetic nanowire

    T. Gushi, K. Ito, S. Honda, Y. Yasutomi, S. Higashikozono, K. Toko, H. Oosato, Y. Sugimoto, K. Asakawa, N. Ota, T. Suemasu

    2015 IEEE International Magnetics Conference, INTERMAG 2015   2015.7

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Institute of Electrical and Electronics Engineers Inc.  

    DOI: 10.1109/INTMAG.2015.7157071

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  • Current-induced dynamics of bubble domains in perpendicularly magnetized TbFeCo wires Reviewed

    Masaaki Tanaka, Hiroki Kanazawa, Sho Sumitomo, Syuta Honda, Ko Mibu, Hiroyuki Awano

    APPLIED PHYSICS EXPRESS   8 ( 7 )   2015.7

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    DOI: 10.7567/APEX.8.073002

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  • Antiferromagnetic coupling and impurity effects at junctions between Fe3O4 and Fe(001) layers

    H. Yanagihara, H. Kamita, S. Honda, J. Inoue, Eiji Kita, H. Itoh, Ko Mibu

    PHYSICAL REVIEW B   91 ( 17 )   2015.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.91.174423

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  • Conduction and Spin Transport via Edge States in Randomly Hydrogenated Graphene Nano-Ribbon Reviewed

    K. Inuzuka, S. Honda, and N. Sano

    JPS Conference Proceedings   vol. 5, pp. 011016-1 – 011016-6   2015.2

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  • Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field Reviewed

    Toshiki Gushi, Keita Ito, Syuta Honda, Yoko Yasutomi, Kaoru Toko, Hirotaka Oosato, Yoshimasa Sugimoto, Kiyoshi Asakawa, Norio Ota, Takashi Suemasu

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 2 )   2015.2

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    We grow a 15-nm-thick ferromagnetic Fe4N epitaxial film on a SrTiO3(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-mu m-wide and 24-mu m-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl-2 reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe4N[100] and [010]. With applying external magnetic field in the direction parallel to Fe4N[1001 or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe4N having a negative spin polarization. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.028003

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  • Magnetization Reversal of Permalloy Film by Pure Spin Current Injection: Relation between Reversal Time and Injected Surface Reviewed

    S. Honda and T. Kimura

    JPS Conference Proceedings   vol. 5, pp. 011015-1 – 011015-5   2015.2

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  • Fabrication of L-shaped Fe

    Gushi Toshiki, Ito Keita, Honda Syuta, Yasutomi Yoko, Toko Kaoru, Oosato Hirotaka, Sugimoto Yoshimasa, Asakawa Kiyoshi, Ota Norio, Suemasu Takashi

    Jpn. J. Appl. Phys.   54 ( 2 )   28003 - 28003   2015.1

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    We grow a 15-nm-thick ferromagnetic Fe<inf>4</inf>N epitaxial film on a SrTiO<inf>3</inf>(001) substrate by molecular beam epitaxy, and process it into approximately 0.5-µm-wide and 24-µm-long L-shaped ferromagnetic narrow wires by electron-beam lithography and Cl<inf>2</inf>reactive ion etching. Their longitudinal directions are set in parallel to the magnetic easy axes, Fe<inf>4</inf>N[100] and [010]. With applying external magnetic field in the direction parallel to Fe<inf>4</inf>N[100] or [010], the position of domain wall is controlled either on the upper side or lower side of the corner. This experiment is the preliminary step toward current-driven domain wall motion in Fe<inf>4</inf>N having a negative spin polarization.

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  • Correlation Effects of Localized Impurities on Electron Transport under 1-D Nano-Structures

    N. Sano, M. R. Zulhidza, Y. Kaneno, S. Honda, A. Ueda, K. Yoshida

    19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19)   647   2015

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    DOI: 10.1088/1742-6596/647/1/012028

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  • Mechanism and control of antiferromagnetic coupling in Fe/Fe3O4 junctions Reviewed

    Syuta Honda, Hideto Yanagihara, Jun-ichiro Inoue, Eiji Kita, Hiroyoshi Itoh, Ko Mibu

    20TH INTERNATIONAL CONFERENCE ON MAGNETISM, ICM 2015   75   1080 - 1087   2015

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    DOI: 10.1016/j.phpro.2015.12.178

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  • Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands Reviewed

    Syuta Honda, Kouhei Inuzuka, Takeshi Inoshita, Norio Ota, Nobuyuki Sano

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   47 ( 48 )   2014.12

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    DOI: 10.1088/0022-3727/47/48/485004

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  • Spin-Polarised Electron Transport across an Abrupt or Partially Intermixed Fe/GaAs(001) Interface Reviewed

    A. Hirohata, L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, Y. Ohno, S Honda, J. Inoue, H. Ohno

    Journal of the Magnetics Society of Japan   38   66 - 70   2014.2

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    DOI: 10.3379/msjmag.1402R006

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  • Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial filmsevaluated by Kelvin probe force microscopy Reviewed

    D. Tsukahara, M. Baba, S. Honda, Y. Imai, K. O. Hara, N. Usami, K. Toko, J. H. Werner, and T. Suemasu

    Journal of Applied Physics   vol. 116, pp. 123709-1 – 123709-8 ( 12 )   123709 - 123709   2014

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    DOI: 10.1063/1.4896760

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  • Electronic structures and magnetic moments of Co3FeN thin films grown by molecular beam epitaxy Reviewed

    Keita Ito, Tatsunori Sanai, Siyuan Zhu, Yoko Yasutomi, Kaoru Toko, Syuta Honda, Shigenori Ueda, Yukiharu Takeda, Yuji Saitoh, Yoji Imai, Akio Kimura, Takashi Suemasu

    APPLIED PHYSICS LETTERS   103 ( 23 )   2013.12

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    DOI: 10.1063/1.4836655

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  • NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors

    植田暁子, LUISIER Mathieu, 吉田勝尚, 本多周太, 佐野伸行

    電子情報通信学会技術研究報告   113 ( 296(SDM2013 99-115) )   61 - 64   2013.11

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  • A numerical approach to surface Green's functions via generalized eigenvalue problems Reviewed

    Takafumi Miyata, Syuta Honda, Ryohei Naito, Shao-Liang Zhang

    Japan Journal of Industrial and Applied Mathematics   30 ( 3 )   653 - 660   2013.11

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    DOI: 10.1007/s13160-013-0116-2

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  • Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films Reviewed

    L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, A. Hirohata

    Physical Review B - Condensed Matter and Materials Physics   87 ( 2 )   2013.1

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    Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure. © 2013 American Physical Society.

    DOI: 10.1103/PhysRevB.87.024401

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  • Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films Reviewed

    L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, A. Hirohata

    PHYSICAL REVIEW B   87 ( 2 )   2013.1

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    Understanding the effect of the interface on electrical spin injection is of great importance for the development of semiconductor spintronics. Fe/GaAs(001) is one of the leading systems for exploring these effects due to the small lattice mismatch. We report on the correlation between the experimentally observed Fe/GaAs(001) interface with the spin-transport properties. Using high-angle annular dark-field scanning transmission electron microscopy, we observe a predominantly abrupt interface with some regions of partial mixing also observed in the same film. We report that reproducible behavior with no bias-dependent polarization inversion was achieved for three-terminal devices. Using ab initio calculations of the experimentally observed interfaces, we show that the contribution to the transport from minority carriers is strongly dependent on the interface structure. DOI: 10.1103/PhysRevB.87.024401

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  • Effect of Spin Polarization Direction on Magnetization Reversal using Pure Spin Current Injection

    本多周太, 伊藤博介

    J Magn Soc Jpn   37 ( 5 )   338-341 (J-STAGE) - 341   2013

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    The dynamics of the magnetization reversal process in permalloy films by the pure spin current injection has been analyzed. We have performed micromagnetics simulations based on the Landau-Lifshitz equation taking into account both the relaxation term and spin transfer torque term caused by the pure spin current which is injected into the small permalloy thin films laterally. We found that the magnetization switching time is decreased and the switching probability is increased by optimizing the spin polarization direction of the injecting pure spin current.

    DOI: 10.3379/msjmag.1308R001

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  • Room-temperature structural ordering of a Heusler compound Fe3Si

    S. Yamada, J. Sagar, S. Honda, L. Lari, G. Takemoto, H. Itoh, A. Hirohata, K. Mibu, M. Miyao, K. Hamaya

    PHYSICAL REVIEW B   86 ( 17 )   2012.11

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    DOI: 10.1103/PhysRevB.86.174406

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  • Micromagnetics simulation for magnetization switching of permalloy films with pure spin current injection. Reviewed International journal

    Syuta Honda, Hiroyoshi Itoh

    Journal of nanoscience and nanotechnology   12 ( 11 )   8662 - 5   2012.11

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    DOI: 10.1166/jnn.2012.6481

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  • Zero-bias anomaly in ferromagnetic Ni nanoconstrictions Reviewed

    K. Ienaga, N. Nakashima, Y. Inagaki, H. Tsujii, S. Honda, T. Kimura, T. Kawae

    PHYSICAL REVIEW B   86 ( 6 )   2012.8

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    DOI: 10.1103/PhysRevB.86.064404

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  • Effects of impurity states on exchange coupling in Fe/Fe3O4 junctions Reviewed

    J. Inoue, S. Honda, H. Itoh, K. Mibu, H. Yanagihara, E. Kita

    PHYSICAL REVIEW B   85 ( 18 )   2012.5

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    Exchange coupling (EC) in Fe/Fe3O4 junctions containing magnetic impurities and in-gap states at the interface is calculated using a formula obtained by a cleaved layer method. The model for EC is constructed by performing first-principles calculations of the electronic and magnetic states of Co, Mn, and Cr impurities on the Fe surface and those of in-gap states in a bulk gamma-Fe2O3, which has the same lattice structure as Fe3O4 but contains Fe defects. We show that the effect of Co impurities on EC is opposite to that of Cr and Mn impurities and that in-gap states tend to cause parallel magnetization alignment of two ferromagnets. These results are attributed to the change in electronic states caused by the presence of impurities. Further, we compare calculated results with experimental ones obtained in Fe/Fe3O4 junctions and suggest that doping magnetic impurities at the interface could be a useful way to control the magnitude and sign of the EC.

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  • Effects of impurity states on exchange coupling in Fe/Fe3O4 junctions Reviewed

    Inoue, J, Honda, S, Itoh, H, Mibu, K, Yanagihara, H, Kita, E

    PHYSICAL REVIEW B   85 ( 18 )   2012.5

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    DOI: 10.1103/PhysRevB.85.184431

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  • Magnetoresistance in fcc Ni/graphene/fcc Ni(111) junctions Reviewed

    R. Sato, T. Hiraiwa, J. Inoue, S. Honda, H. Itoh

    PHYSICAL REVIEW B   85 ( 9 )   2012.3

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    DOI: 10.1103/PhysRevB.85.094420

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  • Micromagnetics Simulation on Magnetization Reversal in Permalloy Thin Film by Pure Spin Current Injection

    本多周太, 伊藤博介

    J Magn Soc Jpn   36 ( 6 )   331-335 (J-STAGE) - 335   2012

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    &amp;nbsp;&amp;nbsp;The dynamics of the magnetization reversal process in permalloy films by pure spin current injection has been analyzed. We have performed micromagnetics simulations based on the Landau-Lifshitz equation taking into account both the relaxation term and spin transfer torque term caused by the pure spin current which is injected into permalloy thin films laterally. For spin injection from one side of the film sample, the magnetization reversal occurs in film samples less than 70 nm wide. This size is independent of the magnitude of the injected spin current. We also found that spin injection from two sides can reverse the magnetization in permalloy films that are several times wider.

    DOI: 10.3379/msjmag.1210R002

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  • Chirality control of magnetic vortex in a square Py dot using current-induced Oersted field Reviewed

    S. Yakata, M. Miyata, S. Honda, H. Itoh, H. Wada, T. Kimura

    APPLIED PHYSICS LETTERS   99 ( 24 )   2011.12

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    DOI: 10.1063/1.3669410

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  • Role of Interfacial Resonant States on Spin Injection in FM/GaAs Contacts Reviewed

    Syuta Honda, Jun-ichiro Inoue, Hiroyoshi Itoh

    IEEE TRANSACTIONS ON MAGNETICS   47 ( 10 )   2753 - 2755   2011.10

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    DOI: 10.1109/TMAG.2011.2158807

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  • Effects of Magnetic Contacts on Magnetoresistance in FM/Graphene/FM Lateral Junctions Reviewed

    T. Hiraiwa, R. Sato, A. Yamamura, J. Inoue, S. Honda, H. Itoh

    IEEE TRANSACTIONS ON MAGNETICS   47 ( 10 )   2743 - 2745   2011.10

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    DOI: 10.1109/TMAG.2011.2158808

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  • Electronic States and Magnetic Coupling in Fe/Fe<sub>3</sub>O<sub>4</sub> Junctions Reviewed

    T. Kida, S. Honda, J. Inoue, H. Itoh, H. Yanagihara, E. Kita, K. Mibu

    Material Research Society Symposium Proceedings   1292   41 - 46   2011.4

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  • Electronic and Magnetic Structure at the Fe/Fe<sub>3</sub>O<sub>4</sub> Interface Reviewed

    T. Kida, S. Honda, H. Itoh, J. Inoue, H. Yanagihara, E. Kita, K. Mibu

    Physical Review B   84   104407-1 - 104407-10   2011.4

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  • Electronic structure and spin-injection of Co-based Heusler alloy/semiconductor junctions Reviewed

    Hiroyoshi Itoh, Syuta Honda, Jun-ichiro Inoue

    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS   470   54 - +   2011

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    DOI: 10.4028/www.scientific.net/KEM.470.54

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  • Graphene for magnetoresistive junctions Reviewed

    J. Inoue, T. Hiraiwa, R. Sato, A. Yamamura, S. Honda, H. Itoh

    Materials Research Society Symposium Proceedings   1284   87 - 92   2011

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    DOI: 10.1557/opl.2011.646

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  • Ab initio study of magnetic structure and exchange coupling in Co2MnSi/Cr/Co2MnSi trilayers

    W. Kakeno, S. Honda, H. Itoh, J. Inoue

    PHYSICAL REVIEW B   82 ( 1 )   014413   2010.7

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    DOI: 10.1103/PhysRevB.82.014413

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  • Magnetoresistance in ferromagnetic-metal/graphene/ferromagnetic-metal lateral junctions

    S. Honda, A. Yamamura, T. Hiraiwa, R. Sato, J. Inoue, H. Itoh

    PHYSICAL REVIEW B   82 ( 3 )   2010.7

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    DOI: 10.1103/PhysRevB.82.033402

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  • Bias dependence of spin-polarized tunnel current through Fe/GaAs and Fe/GaAs/Fe junctions Reviewed

    S. Honda, H. Itoh, J. Inoue

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   43 ( 13 )   2010.4

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  • Numerical simulation of giant magnetoresistance in magnetic multilayers and granular films

    Y. Yamagishi, S. Honda, J. Inoue, H. Itoh

    PHYSICAL REVIEW B   81 ( 5 )   2010.2

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  • Magnetoresistance in Metal/graphene/metal Junctions

    山村彰紀, 本多周太, 井上順一郎, 伊藤博介

    Journal of the Magnetics Society of Japan   34 ( 1 )   34-38 (J-STAGE) - 38   2010

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    &amp;nbsp;&amp;nbsp;We studied the spin dependence of conductance and magnetoresistance for clean ferromagnet/graphene/ferromagnet junctions by making use of both simple and realistic band models for ferromagnetic leads. We found that conductance decays monotonically with increasing graphene length for pure graphene, but oscillates for doped graphenes. Magnetoresistance had non-zero values when ferromagnetic leads with a realistic band structure were attached. For doped graphene magnetoresistance also oscillates with graphene length. The oscillation period was determined by the Fermi wave length of the doped graphene.

    DOI: 10.3379/msjmag.0912RE0013

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  • Magnetic Structures in Co2MnSi=Cr=Co2MnSi Multilayers

    Kakeno W, Honda S, Inoue J, Itoh H

    Journal of the Magnetics Society of Japan   34 ( 2 )   92 - 95   2010

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    &amp;nbsp;&amp;nbsp;The Magnetic structure of magnetic multilayers composed of a full Heusler Co&lt;sub&gt;2&lt;/sub&gt;MnSi(CMS) alloy and Cr was calculated by using first-principles band calculation. We found that the magnetic moments of Co and Cr were parallel, while those of Mn and Cr were anti-parallel in CMS/Cr/CMS multilayers. By comparing the calculated results with those in Fe/Cr/Fe multilayers, it could be argued that the magnetic structure calculated for Co, Mn, and Cr atoms is crucial for the biquadratic coupling observed in these multilayers.

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  • Voltage-dependence of spin dependent transport in Fe/GaAs contacts

    本多周太, 井上順一郎, 伊藤博介

    電気学会マグネティックス研究会資料   MAG-09 ( 168-189 )   11 - 15   2009.12

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  • Magnetization alignments in Co2MnSi/Cr/Co2MnSi junctions

    掛布亘, 本多周太, 井上順一郎, 伊藤博介

    電気学会マグネティックス研究会資料   MAG-09 ( 168-189 )   17 - 20   2009.12

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  • Magnetoresistance and electronic states of the fcc-metal/Graphene/fcc-metal junctions

    山村彰紀, 本多周太, 井上順一郎, 伊藤博介

    電気学会マグネティックス研究会資料   MAG-09 ( 168-189 )   7 - 10   2009.12

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  • Spin polarization control through resonant states in an Fe/GaAs Schottky barrier Reviewed

    S. Honda, H. Itoh, J. Inoue, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, A. Hirohata, J. A. C. Bland

    PHYSICAL REVIEW B   78 ( 24 )   2008.12

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  • Interface Electronic States and Spin Injection in Fe/GaAs Contacts

    本多周太, 井上順一郎, 伊藤博介

    J Magn Soc Jpn   32 ( 3 )   351 - 354   2008.5

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  • Tunnel magnetoresistance of ferromagnetic semiconductor junctions Reviewed

    S. Honda, H. Itoh, J. Inoue

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   244 ( 12 )   4456 - 4459   2007.12

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    DOI: 10.1002/pssb.200777263

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  • Quasiparticle density of states in high-T-c superconductors in the superconducting state

    T. Hata, S. Onari, S. Honda, H. Itoh, Y. Tanaka, J. Inoue

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   463   123 - 125   2007.10

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    DOI: 10.1016/j.physc.2007.05.019

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  • Tunnel conductance via interfacial states in semimetal/semiconductor/semimetal junctions Reviewed

    Syuta Honda, Taku Kondo, Hiroyoshi Itoh, Jun-ichiro Inoue

    PHYSICAL REVIEW B   74 ( 15 )   2006.10

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    The interfacial density of states and conductance of GdAs/GaAs/GdAs junctions, where GdAs and GaAs are a semimetal and a semiconductor, respectively, are calculated using a full-orbital tight-binding model. The tunnel conductance of the junction is calculated using the Kubo formula at zero temperature assuming coherent tunneling of electrons. Emphasizing the role of interfacial states on the conductance, the following results are obtained. The interfacial states extend 2-4 atomic layers from the interface; however, the effect of the interfacial states on the conductance extends up to nearly 10 atomic GaAs layers, and nonmonotonic dependence of the tunnel conductance on the barrier thickness appears for thin GaAs layers. The height of the interfacial density of states does not necessarily correlate with the magnitude of the tunnel conductance. The matching between the Fermi surface of the leads and interfacial states governs the magnitude of the tunnel conductance. It is also found that the nonmonotonic dependence of the tunnel conductance is caused by an interference effect of the interface states existing at the two interfaces of GaAs layer.

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  • Tunnel conductance via interfacial states in semimetal/semiconductor/ semimetal junctions Reviewed

    Syuta Honda, Taku Kondo, Hiroyoshi Itoh, Jun-Ichiro Inoue

    Physical Review B - Condensed Matter and Materials Physics   74 ( 15 )   2006

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    The interfacial density of states and conductance of GdAs/GaAs/GdAs junctions, where GdAs and GaAs are a semimetal and a semiconductor, respectively, are calculated using a full-orbital tight-binding model. The tunnel conductance of the junction is calculated using the Kubo formula at zero temperature assuming coherent tunneling of electrons. Emphasizing the role of interfacial states on the conductance, the following results are obtained. The interfacial states extend 2-4 atomic layers from the interface
    however, the effect of the interfacial states on the conductance extends up to nearly 10 atomic GaAs layers, and nonmonotonic dependence of the tunnel conductance on the barrier thickness appears for thin GaAs layers. The height of the interfacial density of states does not necessarily correlate with the magnitude of the tunnel conductance. The matching between the Fermi surface of the leads and interfacial states governs the magnitude of the tunnel conductance. It is also found that the nonmonotonic dependence of the tunnel conductance is caused by an interference effect of the interface states existing at the two interfaces of GaAs layer. © 2006 The American Physical Society.

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  • Interfacial states and tunnel magnetoresistance of ferromagnetic semimetal/semiconductor junctions Reviewed

    S. Honda, H. Itoh, J. Inoue

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12   3 ( 12 )   4192 - 4195   2006

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    DOI: 10.1002/pssc.200672845

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  • Computation of electrical conductance in nano-scale junctions for device applications

    J Inoue, H Itoh, S Honda, K Yamamoto, T Ohsawa

    JOURNAL OF PHYSICS-CONDENSED MATTER   16 ( 48 )   S5563 - S5570   2004.12

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    DOI: 10.1088/0953-8984/16/48/012

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Books

  • Graphene in Spintronics: Fundamentals and Applications

    J. Inoue, A. Yamakage, S. Honda( Role: Joint author)

    Pan Stanford  2016.5  ( ISBN:9789814669566

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  • 磁気メモリと磁化の制御

    本多周太( Role: Sole author)

    理工学と技術  2015.11 

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  • 連結したスキルミオンを用いた高集積レーストラックメモリにむけたマイクロマグネティクスシミュレーション

    本多周太

    まぐね   18   67 - 72   2023.4

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  • Overlapping-skyrmions based racetrack memory

    Taichi Nishitani, Syuta Honda, Hiroyoshi Itoh

    2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings   2023

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  • Vertical long pillar magnetic memory with two magnetic junctions

    Syuta Honda, Yoshiaki Sonobe

    2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings   2023

  • 非磁性金属TiN上に作製したコバルトフェライト垂直磁化膜の電気伝導特性評価

    田中雅章, 成瀬克芳, 野村幸佑, 谷口卓也, 本多周太, 小野輝男, 壬生攻

    日本物理学会講演概要集(CD-ROM)   73 ( 1 )   ROMBUNNO.22pPSB‐2   2018.3

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  • Electric-current-induced dynamics of bubble domains in ferrimagnetic Tb/Co multilayer wires below and above the magnetic compensation point

    Tanaka M. A, Sumitomo S, Hamada H, Honda S, Awano H, Mibu K

    Meeting Abstracts of the Physical Society of Japan   72 ( 0 )   1189 - 1189   2017

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    Language:Japanese   Publisher:一般社団法人 日本物理学会  

    &lt;p&gt;プラチナ層と接する垂直磁化フェリ磁性体多層膜Tb/Coの{Tb/Co}_7_/Pt細線上にバブル磁区を生成し,電流印加による挙動を調べた.電流印加によりバブル磁区は細線の端方向への傾斜をもって成長した.フェリ磁性体の磁化の主体となる原子がTbとCoの場合で傾斜方向が逆になることがわかった.プラチナ層からのスピンホール効果を考慮したマイクロマグネティスシミュレーションでも同様の結果が得られ,このバブル磁区の傾斜はスピンホール効果によって説明できることがわかった&lt;/p&gt;

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  • 19pPSB-30 Current-induced domain wall motion in ferrimagnetic Tb/Co wires

    Sumitomo S, Adachi N, Tanaka M. A, Honda S, Mibu K, Awano H

    Meeting Abstracts of the Physical Society of Japan   71 ( 0 )   1156 - 1156   2016

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    DOI: 10.11316/jpsgaiyo.71.1.0_1156

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  • 磁気メモリと磁化の制御

    本多周太

    理工学と技術   22   7 - 10   2015.11

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  • 16pPSA-30 High-frequency magnetic resonance of the magnetic vortexes in the two-layered permalloy thin films

    Honda S., Tsuchiya S., Ohsawa T., Yakata S., Kimura T.

    Meeting Abstracts of the Physical Society of Japan   70   842 - 842   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_842

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  • 21pPSA-15 Control of current-induced dynamics for magnetic bubble domains in TbFeCo wires

    Sumitomo S, Kanazawa H, Tanaka M. A, Honda S, Mibu K, Awano H

    Meeting Abstracts of the Physical Society of Japan   70 ( 0 )   1088 - 1088   2015

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.70.1.0_1088

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  • 18pCM-6 Investigation on current-induced dynamics for magnetic bubble domains in perpendicularly magnetized wires

    Sumitomo S, Adachi N, Kanazawa H, Tanaka M. A, Honda S, Mibu K, Awano H

    Meeting Abstracts of the Physical Society of Japan   70 ( 0 )   959 - 959   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_959

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  • 7pPSA-13 Electronic structures and spin-filter effects of spinel ferrites

    Itoh H., Honda S.

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   276 - 276   2014.8

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  • 7pPSA-15 Current-induced dynamics of magnetic bubble domains in TbFeCo wires

    Kanazawa H, Sumitomo S, Tanaka M. A, Honda S, Awano H, Mibu K

    Meeting Abstracts of the Physical Society of Japan   69 ( 0 )   276 - 276   2014

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  • Antiparallel Exchange Coupling at Interface of Fe3O4/Fe(001)

    柳原英人, 喜多英治, 本多周太, 壬生攻, 伊藤博介, 井上順一郎

    まぐね   7 ( 3 )   101 - 107   2012.6

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  • 24aPS-13 First principle calculation for the spin injection of Fe/GaAs contact

    Honda Syuta, Itoh Hiroyoshi, Inoue Jun-ichiro, Hirohata Atsufumi

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   477 - 477   2012.3

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  • 強磁性体/グラフェンナノリボン接合におけるスピン依存伝導 (関西大学先端科学技術推進機構10周年記念)

    本多 周太, 伊藤 博介, 佐藤 竜一, 平岩 知大, 山村 彰紀, 井上 順一郎

    関西大学先端科学技術シンポジウム講演集   16   66 - 69   2012.1

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  • 26aPS-19 Effects of interfacial resonant states on spin injection

    Honda S., Itoh H., Inoue J.

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   488 - 488   2011.3

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  • 26aPS-101 Magnetoresistance in FM/Graphene/FM junctions

    Hiraiwa T., sato R., Inoue J., Honda S., Itoh H.

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   715 - 715   2011.3

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  • 26aPS-42 Magnetic state and exchange coupling in magnetite/Fe junctions

    Kida T., Honda S., Itoh H., Inoue J.

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   493 - 493   2011.3

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  • 26aPS-37 LLG simulation for magnetization switching of the magnetic dot

    Honda Syuta, Itoh Hiroyoshi

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   492 - 492   2011.3

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  • 26aPS-1 Electronic structure and magnetic anisotropy of spin-ferrite II

    Itoh,H, Honda,S, Suzuki,N, Inoue,J, Yanagihara,H, Kita,E

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   484   2011.3

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  • 23pPSB-65 Magnetoresistance in ferromagnetic metal/graphene/ferromagnetic metal junctions

    Honda Syuta, Yamamura Akinori, Hiraiwa Tomohiro, Inoue Jun-ichiro, Itoh Hiroyoshi

    Meeting abstracts of the Physical Society of Japan   65 ( 2 )   644 - 644   2010.8

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  • 25aPS-4 Electronic structure and magnetic anisotropy of spin-ferrite

    Itoh,H, Honda,S, Suzuki,N, Inoue,J, Yanagihara,H, Kita,E

    Meeting abstracts of the Physical Society of Japan   65 ( 2 )   399   2010.8

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  • 22pPSA-60 Interlayer exchange coupling in Co_2MnSi/Cr/Co_2MnSi

    Kakeno W., Honda S., Inoue J., Itoh H.

    Meeting abstracts of the Physical Society of Japan   65 ( 1 )   512 - 512   2010.3

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  • 28aPS-104 Tunnel magnetoresistance of Fe/GaAs/Fe junctions

    Honda Syuta, Inoue Jun-ichiro, Itoh Hiroyoshi

    Meeting abstracts of the Physical Society of Japan   64 ( 1 )   481 - 481   2009.3

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  • 28aTF-7 Electronic structure and spin-filter effect of γ-Fe_2O_3 (maghemite)

    Itoh,H, Honda,S, Inoue,J, Yanagihara,H, Kita,E

    Meeting abstracts of the Physical Society of Japan   64 ( 1 )   471   2009.3

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  • 23aPS-27 Spin-injection and interface electronic states at Fe/GaAs junctions

    Honda Syuta, Inoue Jun-ichiro, Itoh Hiroyoshi

    Meeting abstracts of the Physical Society of Japan   63 ( 1 )   431 - 431   2008.2

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  • 20aTA-6 Magneto resistive effect in the magnetic semiconductor junctions

    Honda Syuta, Itoh Hiroyoshi, Inoue Junichiro

    Meeting abstracts of the Physical Society of Japan   62 ( 1 )   681 - 681   2007.2

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  • 25pPSA-4 The interface state and tunnel magneto resistance in ferromagnetic semimetal and a semiconductor junction

    Honda Syuta, Itoh Hiroyoshi, Inoue Jun-ichiro

    Meeting abstracts of the Physical Society of Japan   61 ( 2 )   555 - 555   2006.8

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  • 28aXB-6 Electronic states and conductance of GaAs/GdAs junctions

    Honda Syuta, Kondo Taku, Itoh Hiroyoshi, Inoue Jun-ichiro

    Meeting abstracts of the Physical Society of Japan   61 ( 1 )   679 - 679   2006.3

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  • 24aPS-10 Electronic states and conductance of semimetal/semiconductor junctions

    Honda S., Kondo T., Itoh H., Inoue J.

    Meeting abstracts of the Physical Society of Japan   60 ( 1 )   633 - 633   2005.3

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  • 28pPSB-18 Electronic states and conductance of semiconductor/semimetal junctions

    Honda S., Kondo T., Itoh H., Inoue J.

    Meeting abstracts of the Physical Society of Japan   59 ( 1 )   694 - 694   2004.3

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Presentations

Industrial property rights

  • 多値磁気メモリ素子、磁気メモリ装置、多値磁気メモリ素子の制御方法、および制御プログラム

    本多周太, 木下敦寛, 園部義明

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    Application no:特願2024-095354  Date applied:2024.6

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  • 多値磁気メモリ素子、磁気メモリ装置、多値磁気メモリ素子の制御方法、および制御プログラム

    本多周太

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    Application no:特願2023-156450  Date applied:2023.9

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  • 磁気素子および磁気構造体の生成方法

    本多周太

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    Application no:特願2023-043519  Date applied:2023.3

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  • 磁気メモリ装置、磁気メモリ素子の制御方法、および制御プログラム

    本多周太, 加藤剛志, 大島大輝, 園部義明

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    Application no:特願2023-020242  Date applied:2023.2

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  • 多値磁気メモリ素子、磁気メモリ装置、多値磁気メモリ素子の制御方法、および制御プログラム

    本多周太

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    Application no:特願2022-208638  Date applied:2022.12

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  • 磁気素子および磁気メモリ装置

    本多周太

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    Application no:特願2022-007392  Date applied:2022.1

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  • 磁化制御デバイス及び磁気メモリ装置

    本多周太

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    Application no:特願2021-063692  Date applied:2021.4

    Patent/Registration no:特許第7555120号  Date registered:2024.9 

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  • 磁化制御デバイス及び磁気メモリ装置

    本多周太

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    Application no:特願2021-063691  Date applied:2021.4

    Patent/Registration no:特許第7555119号  Date registered:2024.9 

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  • 磁化制御デバイス、磁化制御デバイスの製造方法、及び磁気メモリ装置

    本多周太

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    Application no:特願2020-217944  Date applied:2020.12

    Patent/Registration no:特許第7539700号  Date registered:2024.8 

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  • 磁気メモリ素子及び磁気メモリ装置

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    Application no:特願2020-172269  Date applied:2020.10

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  • 磁気メモリ素子及び磁気メモリ装置

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    Application no:特願2020-167192  Date applied:2020.10

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  • 磁気メモリ素子及び磁気メモリ装置

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    Application no:特願2019-196644  Date applied:2019.10

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  • レーストラック磁気メモリ装置、及びその書き込み方法

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    Application no:特願2019-196645  Date applied:2019.10

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  • 磁気メモリ素子及び磁気メモリ装置

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    Application no:特願2019-196646  Date applied:2019.10

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  • 高速磁化反転方法、高速磁化反転デバイス、及び磁気メモリ装置

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    Application no:特願2019-100670  Date applied:2019.5

    Patent/Registration no:特許7360121 

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  • 磁気素子、磁気素子を製造する方法、および磁気メモリ装置

    本多 周太, 田中 雅章

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    Applicant:学校法人 関西大学, 国立大学法人 名古屋工業大学

    Application no:特願2016-049981  Date applied:2016.3

    Announcement no:特開2017-168514  Date announced:2017.9

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  • 磁気装置

    本多 周太, 末益 崇, 伊藤 啓太

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    Applicant:国立大学法人 筑波大学

    Application no:特願2013-209545  Date applied:2013.10

    Announcement no:特開2015-076419  Date announced:2015.4

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  • 発振素子

    家形 諭, 木村 崇, 本多 周太

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    Applicant:国立大学法人九州大学

    Application no:JP2013065217  Date applied:2013.5

    Announcement no:WO2013-180277  Date announced:2013.12

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  • 磁化反転装置

    木村 崇, 本多 周太, 伊藤 博介

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    Applicant:国立大学法人九州大学, 国立大学法人 筑波大学, 学校法人 関西大学

    Application no:特願2013-082098  Date applied:2013.4

    Announcement no:特開2014-204106  Date announced:2014.10

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