2024/03/30 更新

写真a

イナダ　ミツル
稲田　貢
INADA,Mitsuru
所属
システム理工学部 教授
職名
教授
連絡先
メールアドレス
外部リンク

学位

  • 博士（材料科学） （ 2000年3月 ）

研究キーワード

  • 低次元物性;低温・強磁場物性

  • 低次元物性

  • 低温・強磁場物性

研究分野

  • 自然科学一般 / 半導体、光物性、原子物理

学歴

  • 北陸先端科学技術大学院大学   材料科学研究科   物性科学専攻

    2000年

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    国名： 日本国

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  • 京都教育大学   教育学部   特修理学科

    - 1994年

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    国名： 日本国

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所属学協会

論文

  • Appearance of Ferromagnetic Property for Si Nanopolycrystalline Body and Vanishing of Electrical Resistances at Local High Frequencies 査読

    稲田 貢, 佐伯 拓, 飯田 幸雄

    Journal of Nanomaterials   Vol. 2018, ID 9260280, pp1-12.   2018年11月

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  • Improvement in wettability of porous Si by carboxylate termination 査読

    Masanori Sakakibara, Kimihisa Matsumoto, Kazuhide Kamiya, Shigeki Kawabata, Mitsuru Inada, Shinya Suzuki

    Jpn. J. Appl. Phys.   57, 02CB16-1-6   2018年1月

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  • Bandgap bowing in Ni1-xMgxO alloy

    Tadashi Saitoh, Kazutoshi Kinoshita, Mitsuru Inada

    Appl. Phys. Lett.   112, 041904   2018年1月

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  • Aluminum Nano-polycrystalline Substance with Ferromagnetics and Application to High-Frequency Core Inductor 査読

    Mitsuru Inada, Yukio Iida, Taku Saiki, Shinichirou Masuda

    J. Electrical and Electronic Engineering   5, 98-103   2017年6月

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  • Luminescence Property of Water Dispersed Porous Si Terminated by Organic Molecules 査読

    M. Kamiguchi, M. Sakakibara, K. Matsumoto, K. Kamiya, T. Nomura, S. Kawabata, M. Inada, S. Suzuki

    Trans. Mat. Res. Soc. Japan   41, 347-350   2016年12月

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  • Crossover from Efros-Shklovskii variable range hopping to nearest-neighbor hopping in silicon nanocrystal random network 査読

    Mitsuru Inada, Hiroshi Yamamoto, Manabu Gibo, Rieko Ueda, Ikurou Umezu, Shukichi Tanaka, Tadashi Saitoh, Akira Sugimura

    Applied Physics Express   8, 105001-1-3   2015年9月

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  • Band gap tuning of Ni1−xMgxO films by RF-sputter deposition for deep- ultraviolet photodetectors

    Hiroki Nishitani, Kohei Ohta, Sosuke Kitano, Ryosuke Hamano, Mitsuru Inada, Tomohiro Shimizu, Shoso Shingubara, Hiromitsu Kozuka, Tadashi Saitoh

    Applied Physics Express   8, 105801-1-3   2015年9月

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  • Marked increase in photoluminescence from porous Si aged in ethanol solution 査読

    K. Matsumoto, R. Nishio, T. Nomura, K. Kamiya, M. Inada, S. Suzuki

    Jpn. J. Appl. Phys   54, 021301-1-4   2015年1月

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  • Narrowband, Visible-Blind UV-A Sensor Based on a Mg0.52Zn0.48O Film Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target

    Y. Kohama, T. Nagai, M. Inada, T. Saitoh

    Advances in Materials Science and Engineering   120463-01-04   2014年3月

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  • Microwave-assisted Synthesis of Near-infrared-luminescent Ovalbumin-protected Gold Nanoparticles as a Luminescent Glucose Sensor

    Junya Yoshimoto, Naoki Tanaka, Mitsuru Inada, Ryuichi Arakawa, Hideya Kawasaki

    Chem. Lett.   43, 793–795   2014年2月

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  • Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting 査読

    Ikurou Umezu, Muneyuki Naito, Daisuke Kawabe, Yusuke Koshiba, Katsuki Nagao, Akira Sugimura, Tamao Aoki, Mitsuru Inada, Tadashi Saitoh, Atsushi Kohno

    Appl. Phys. A   117, 155-159   2014年2月

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  • Single nanosized FeO nanocrystals with photoluminescence properties

    Yuta Sugii, Mitsuru Inada, Hiroki Yano, Yasushi Obora, Yasuhiko Iwasaki, Ryuichi Arakawa, Hideya Kawasaki

    J. Nanopart. Res.   15, 1379-1-8   2013年1月

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  • AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

    Tomohiro Shimizu, Takuya Yamaguchi, Fumihiro Inoue, Mitsuru Inada, Shoso Shingubara

    Jpn. J. Appl. Phys.   51, 11PE02-1-4   2012年11月

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  • Photoluminescence from Excited Energy Bands in Au25 Nanoclusters

    Isamu Sakanaga, Mitsuru Inada, Tadashi Saitoh, Hideya Kawasaki, Yasuhiko Iwasaki, Toshiki Yamada, Ikurou Umezu, Akira Sugimura

    Applied Physics Express   4, 095001-1-3   2011年8月

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  • Stability of the DMF-Protected Au Nanoclusters: Photochemical, Dispersion, and Thermal Properties

    Hideya Kawasaki, Hiroko Yamamoto, Hiroaki Fujimori, Ryuichi Arakawa, Yasuhiko Iwasaki, Mitsuru Inada

    Langmuir   26(8), 5926–5933   2010年4月

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  • Surfactant-free solution synthesis of fluorescent platinum subnanocluster

    Hideya Kawasaki, Hiroko Yamamoto, Hiroki Fujimori, Ryuichi Arakawa, Mitsuru Inada, Yasuhiko Iwasaki

    Chem. Commun.   46, 3759–3761   2010年4月

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  • One-pot preparation of water-soluble blue luminescent silica flakes via microwave heating

    Y. Iwasaki, Y. Shibata, A. Watanabe, M. Inada, H. Kawasaki, T. Uchino

    Chem. Lett.   39, 370-371   2010年3月

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  • Oxidation processes of surface hydrogenated silicon nanocrystallites prepared by pulsed laser ablation and their effects on the photoluminescence wavelength

    Ikurou Umezu, Akira Sugimura, Toshiharu Makino, Mitsuru Inada, Kimihisa Matsumoto

    J. Appl. Phys.   2008年

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  • STM observation of zinc(II) bridled chiroporphyrin molecules on titanium dioxide surface

    Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Shinro Mashiko, Lorette Scifo, Benjamin Grevin, Anna Castaings, Jean-Claude Marchon

    Thin Solid Films   2008年

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  • Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas

    Ikurou Umezu, Akira Sugimura, Mitsuru Inada, Toshiharu Makino, Kimihisa Matsumoto, M. Takata

    Physical Review B   2007年

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  • Scanning Tunneling Microscopy of The Porphyrin-based Molecules on TiO2 Surface

    Mitsuru Inada, L. Scifo, S.Tanaka, B.Grevin, H.Suzuki, S.Makino

    Jpn. J. Appl. Phys.   2103-2105   2006年

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  • Correlation between Natural Oxidation Process and Photoluminescence Properties of Hydrogenated Si Nanocrystallites Prepared by Pulsed Laser Ablation 査読

    Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Akira Sugimura

    Jpn.J.Appl. Phys.   44, 8742-8746   2005年1月

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  • Non-contact AFM study of oxidized surface of single-crystalline SrTiO3 with porphyrin-based molecules

    Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mshiko

    Nanptechnology   16, S107-S111   2005年

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  • Inter-dot electron transport in coupled InAs quantum dots under magnetic field

    Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A. Sugimura

    Semiconductor Science and Technology   19, S54-S55   2004年

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  • Correlation Between surface oxide and photoluminescene properties of Si nanoparticles prepared by pulseed laser ablation

    Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

    Appl. Phys. A   79, 1545-1547   2004年

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  • Recombination process of CdS quantum dot covered by novel polymer chains

    Mitsuru Inada, I.Umezu, R.Koizumi, A.Sugimoto, T.Makino, A.Sugimura, Y.sunaga, T.Ishii, Y. Nagasaki

    Physica E   21, 1102-1105   2004年

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  • Optical and transport studies in coupled InAs quantum dots embedded in GaAs

    Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

    Physica E   21, 317-321   2004年

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  • Optical properties of CdS nanocrystal covered by polymer chains on the surface

    Mitsuru Inada, I. Umezu, R. Koizumi, K. Mandai, T.Aoki-Matsumoto, K.Mizuno, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki

    Microelectronic Engineering   66, 53-58   2003年

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  • Reaction between nitrogen gas and silicon species during pulsed laser ablation

    Mitsuru Inada, Ikurou Umezu, Kimimori Kohno, Tomohiro Yamaguchi, Toshinobu Makino, Akira Sugimura

    J. Vac. Sci. Technol. A   21, 1680-1682   2003年

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  • "Effects of hydrogenation on photolu,imescenes formed by pulsed laser ablation"

    Mitsuru Inada, H. Nakagawa, I.Umezu, A.Sugimura

    Materials Science and Engineering B   101 283-285   2003年

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  • Effect of gas pressure on the reactive laser ablation of silicon target

    Mitsuru Inada, Ikurou Umezu, Akira Sugimura

    J. Vac. Sci. Technol. A   21, 84-86   2003年

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  • Nanoscale anodization of an amorphous silicon surface with an atomic force microscope

    Mitsuru Inada, Ikurou Umezu, Takatoshi Yoshida, Kimishima Matsumoto, Akira Sugimura

    Appl. Phys. Lett.   81, 1492-1493   2002年

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  • Effect of argon and hydrogen plasmas on the surface of sulicon

    Mitsuru Inada, I.Umezu, K.Kohno, K.Aoki, Y.Koyama, A.Sugimura

    Vacuum   66, 453-456   2002年

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  • Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient

    Mitsuru Inada, I.Umezu, K.. Kohno, T.Yamaguchi, A.sugimura

    Appl. Surface Science   197-198, 376-378   2002年

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  • Effects of Hydrogen on Si nanoparticles formed by pulsed laser ablation

    Mitsuru Inada, Hiroyuki Nakagawa, Ikurou Umezu, Akira Sugimura

    Appl. Surface Science   197-198, 666-669   2002年

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  • Effect of structure on radiative recombination process in amorphous silicon suboxide prepareing by rf sputtering

    Mitsuru Inada, Ken-ichi Yoshida, Ikurou Umezu, Naomichi Sakamoto, Akira Sugimura

    J. Appl. Phys.   92, 5936-5941   2002年

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  • Deposition of silicon nitride films by pulsed laser ablation of the Si target in Nitrogen gas

    Mitsuru Inada, Ikurou Umezu, Kimimori Kohno, Tomohiro Yamaguchi, Akira Sugimura

    J. Vac. Sci. Technol. A   20, 30-32   2002年

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  • Photoluminescence properties of amorphous silicon-based oxygen and hydrogen alloys

    Mitsuru Inada, Ikurou Umezu, Ken-ichi Yoshida, Naomichi Sakamoto, Takatoshi Murota, Yoshiaki Takashima, Akira Sugimura

    J. Appl. Phys.   91, 2009-2013   2002年

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  • Nono-oxidation of an amorphous silicon surface with an atomic force microscope

    Mitsuru Inada, I.Umezu, T.Yoshida, K.Matsumoto, A.Sugimura

    J. Noncryst. Solids   299-302, 10910-1094   2002年

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  • Conduction-type control of Ge films grown on GaAs by molecular beam epitaxy

    Mitsuru Inada, T. Fujishima, I.Umezu, A.sugimura, S.Yamada

    J. Crys. Growth   227-228, 791-795   2001年

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  • Loacl Magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, Naoki Yoneyama, Takahiko Sasaki, Norio Kobayashi, syoji Yamada

    Synthtic Metals   120, 815-816   2001年

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  • Correlation Between photoluminescence intensity and micro syructure in amorphous silicon films prepared by reactive RF sputtering

    Mitsuru Inada, Ikurou Umezu, Takatoshi Murota, Masayuki Kawata, Yoshiaki Takasima, Ken-ichi Yoshida, Akira Sugimura

    Jpn. J. Appl. Phys   39, L844-L846   2000年

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  • Fiest Order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, Takahiko Sasaki, Terukazu Nishizaki, Norio Kobayashi, Syoji Yamada, Tetsurou Fukase

    J. Low Temp. Phys.   117, 1423-1427   1999年

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  • Ge selective growth on(001)GaAs substrates by molecular beam epitaxy

    Mitsuru Inada, Hidenobu Hori, Syoji Yamada

    Jpn. J. Appl. Phys   38, L398-L400   1999年

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  • Quanturn Hole Transport in GaAs-Ge-GaAs Lateral Narrow Junctions

    Mitsuru Inada, Syoji Yamada

    Physica B   272, 78-81   1999年

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  • Fabrication of GaAs-Ge-GaAs Lateral Narrow Junctions and Low-Temperaure Hole Transport

    Mitsuru Inada, T.Kikutani, H.Hori, S.Yamada

    Solid-state electronics   42, 1539-1542   1998年

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▼全件表示

MISC

  • Scanning Tunneling Microscopy of The Porphyrin-based Molecules on TiO2 Surface 査読

    Mitsuru Inada, L. Scifo, S.Tanaka, B.Grevin, H.Suzuki, S.Makino

    Jpn. J. Appl. Phys.   2103-2105   2006年

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  • Au(III)基板上に堆積したポルフィリン誘導体分子のSTM観察

    稲田 貢, 田中秀吉, 上門敏也, 鈴木仁, 益子信郎

    2005年

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  • Inter-dot electron transport in coupled InAs quantum dots under a magnetic field

    M Inada, Umezu, I, P Vaccaro, S Yamada, A Sugimura

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   19 ( 4 )   S54 - S55   2004年4月

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    記述言語：英語   出版者・発行元：IOP PUBLISHING LTD  

    We studied electrical transport properties of coupled InAs quantum dots (QDs) embedded in GaAs. A resonance peak in the current-voltage characteristics was observed in the low temperature region. When the magnetic field was applied, a linear shift of the resonance voltage was observed. As a result of the g-factor estimation, the resonance is attributed to the current corresponding to the electron transport through coupled InAs QDs.

    DOI： 10.1088/0268-1242/19/4/020

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  • Optical and transport studies in coupled InAs quantum dots embedded in GaAs

    M Inada, Umezu, I, PO Vaccaro, S Yamada, A Sugimura

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   317 - 321   2004年3月

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    記述言語：英語   出版者・発行元：ELSEVIER SCIENCE BV  

    We studied optical and electron transport proper-ties of coupled InAs quantum dots (QDs) embedded in GaAs. Photoluminescence (PL) from the high dot density samples indicated asymmetry in the PL spectra when the ambient temperature is lower than about 50 K. Comparing this result with theoretical calculations, it is shown that this phenomenon is explained by the inter-dot electronic coupling effect. In the photo-conductance measurement, resonance peaks in the current-voltage characteristics were observed in the low-temperature region. The dependence of the resonance voltage on the magnetic field intensity was studied to extract the g-factor. It is also shown that the resonances are attributed to the current corresponding to the electron transport through QDs. According to these results, it is concluded that the inter-dot electronic coupling in the self-assembled InAs/GaAs QD systems occurs when the inter-dot spacing is as low as several nanometers and the ambient temperature is less than about 50 K. (C) 2003 Elsevier B.V. All rights reserved.

    DOI： 10.1016/j.physe.2003.11.020

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  • Recombination process of US quantum dot covered by novel polymer chains

    Umezu, I, R Koizumi, A Sugimoto, M Inada, T Makino, A Sugimura, Y Sunaga, T Ishii, Y Nagasaki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   1102 - 1105   2004年3月

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    記述言語：英語   出版者・発行元：ELSEVIER SCIENCE BV  

    An organic-inorganic compound was prepared by adding organic material to inorganic, semiconductor nanoparticles. Polyethylene glycol, tethered chains (PEG-TC) were added to the surface of US nanoparticles by a colloidal technique. The photoluminescence (PL) peak energy of the US nanoparticles gradually increased with the solvent density. Furthermore, by combining texas red streptavidin molecules with the PEG-TC on the surface of the US nanoparticles, the emission from texas red and change in the PL peak energy of US nanoparticle was observed. These results indicate that the recombination processes of the US nanoparticles can be controlled by the physical state of the PEG-TC chain. (C) 2003 Elsevier B.V. All rights reserved.

    DOI： 10.1016/j.physe.2003.11.187

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  • Correlation between PL emission band and growth of oxide layer on surface of silicon nanocrystallites

    Mitsuru Inada, I.Umezu, M.Koyama, T.Hasegawa, K.Matsumoto, A.sugimura

    AIP conferenec proceedings   Vol.772 855-856   2004年

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  • 水素化Siナノ決勝を活性層に持つEL素子の発光波長制御

    稲田 貢, 小山基彦, 今井俊和, 梅津郁朗, 杉村陽

    2004年

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  • 非接触型原子間力顕微鏡によるSTO単結晶表面の原始スケール観察

    稲田 貢, 田中秀吉, 鈴木仁, 上門敏也, 益子信郎

    2004年

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  • レーザーアブレーションにおけるSiと水素の反応

    稲田 貢, 木村巧, 梅津郁朗, 杉村陽

    2004年

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  • Correlation between electronic structure and chemical bond on the surface of hydrogeneted silicon nanocrystallities

    Mitsuru Inada, I.Umezu, T.Makino, M.Takata, A.Sugimura

    AIP conferenec proceedings   Vol.772 691-692   2004年

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  • Scanning tunnering microscopy observation of porphyrin molecules deposited on Au(III) substrate

    Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mashiko

    The International Conference on Nano-molecular Electronics(ICNME2004）   PB-24   2004年

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  • Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

    Mitsuru Inada, Ikurou Umezu, Shukichi Tanaka, Shinro Mashiko, Akira Sugimura

    Mater. Res. Symp. Proc.   "832, F7.24.1-F7.24.5"   2004年

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  • Preparation of surface controleled silicon nanocrystallites by pulsed laser ablation

    Mitsuru Inada, I.Umezu, T.Makino, A.Sugimura

    AIP conferenec proceedings   Vol.772 861-862   2004年

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  • Optical properties of US nanocrystal covered by polymer chains on the surface

    Umezu, I, R Koizumi, K Mandai, T Aoki-Matsumoto, K Mizuno, M Inada, A Sugimura, Y Sunaga, T Ishii, Y Nagasaki

    MICROELECTRONIC ENGINEERING   66 ( 1-4 )   53 - 58   2003年4月

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    記述言語：英語   出版者・発行元：ELSEVIER SCIENCE BV  

    We prepared novel CdS nanocrystal by colloid technique; CdS nanocrystal possessing polyethylene glycol tethered chains (PEG-TC) on the surface. A relatively sharp optical absorption peak was observed at around 3.4 eV. The size of the nanocrystal was estimated by the peak energy to be 4-5 nm in diameter. A very broad photoluminescence (PL) peak centered at 2.4 eV was observed when excited at 3.8 eV. The PL spectra excited at lower photon energy indicates that the PL peak is composed of 2.5, 2.3 and 1.7-1.8 eV peaks. When we excited the specimen below 2.7 eV, PL spectra of colloid solution and cast film of PEG-TC CdS was very different. The difference in the recombination processes between PEG-TC US ensemble and isolated PEG-TC US is discussed in the present paper. (C) 2003 Elsevier Science B.V. All rights reserved.

    DOI： 10.1016/S0167-9317(03)00024-8

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  • Effects of plasma surface treatment on the surface of silicon nanocrystal

    Mitsuru Inada, I. Umezu, K.Jyuoji, K.Yoshida, T.Makino;A

    2003年

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  • "Correlation between surface oxide and photolu,imescene properties of si nanoparticles prepared by pulsed laser ablation"

    Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

    2003年

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  • Structural and Optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

    Mitsuru Inada, T.Makino, K.Yoshida, I.Umezu, A.Sugimura

    2003年

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  • Nanoparticle formation and chemical reactions in the silicon laser ablation plume with a hydrogen gas atmosphere

    Mitsuru Inada, T.Kimura, T.Makino, I.Umezu, A.Sugimura

    2003年

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  • Nano-oxidation of an amorphous silicon surface with an atomic force microscope

    I. Umezu, T. Yoshida, K. Matsumoto, M. Inada, A. Sugimura

    Journal of Non-Crystalline Solids   299-302 ( 2 )   1090 - 1094   2002年4月

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    記述言語：英語  

    A surface anodization technique was applied to an amorphous silicon (a-Si) surface by means of an atomic force microscope (AFM). The oxide line height increased with increasing applied voltage. The height of these lines on the un-hydrogenated amorphous silicon (a-Si:H) film was greater than that on crystalline silicon (c-Si) due to the large defect density in the former. Although the height of the oxide lines did not depend on film thickness, their width increased with decreasing film thickness. The photoluminescence (PL) intensity of the nano-scale lattice pattern drawn on a-Si:H was measured by micro-scale PL equipment. The PL intensity from the area having narrow oxide lines was smaller than that from the non-oxidized area. This indicates that anodization affects not only the area observed by the AFM, but its effects also spread over a sub-micron region. © 2002 Elsevier Science B.V. All rights reserved.

    DOI： 10.1016/S0022-3093(01)01076-6

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  • Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient

    I. Umezu, T. Yamaguchi, K. Kohno, M. Inada, A. Sugimura

    Applied Surface Science   197-198   376 - 378   2002年

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    記述言語：英語  

    Silicon nitride films were synthesized by reactive pulsed laser ablation (PLA) of a Si target in N2 gas atmosphere. At different laser fluences and N2 gas pressures the infrared absorption peak attributed to Si-N bond was evaluated. The nitrogen concentration in the film increased with the increasing fluence. Nitrogen concentration depended also on N2 gas pressure
    it increased as N2 pressure increase up to 10 Pa and then it decreased with further increasing N2 gas pressure. These results indicate that decomposition of N2 molecules and collisions of SiNx clusters with N2 molecules are essential to prepare silicon nitride films by PLA method. The PLA is a promising method to fabricate nitrogen rich silicon nitride films without using poisonous gases such as silane and ammonia. © 2002 Elsevier Science B.V. All rights reserved.

    DOI： 10.1016/S0169-4332(02)00343-4

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  • Correlation between structure and recombination process in Si-based amorphous alloys prepared by RF sputtering

    Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

    2002年

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  • Correlation between structure and nonradiative recombination process in silicon nanocrystallites

    Mitsuru Inada, I.Umezu, H.Nakagawa, K.Matsumoto, A.Sugimura

    Proc. 26th Int. Conf. Phys. of Semicond.   "CD-ROM D173,1-4"   2002年

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  • Optical properties of CdS nanosphere possesing tethered PEG chains on the surface

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, T.Ishi, Y.Nagasaki

    2002年

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  • Effects of hydrogen on photoluminescene of Si nanoparticles formed by pulsed laser ablation

    Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

    2002年

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  • 水素化したSiナノ微粒子の発光特性

    稲田 貢, 梅津郁朗, 杉村陽

    2002年

    　詳細を見る

  • Observation of inter-dot electron transport via spin-split states in InAs quantum dot

    Mitsuru Inada, S. Sato, I. Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

    Proc. 26th Int. Conf. Phys. Of Semicond   "CD-ROM H188, 1-5"   2002年

    　詳細を見る

  • "Effects of nanoscale anodization of silicon surface on the photolu,imescene properties"

    Mitsuru Inada, I.Umezu, T. Yoshida, K.Matsumoto, A.Sugimura

    2002年

    　詳細を見る

  • Optical properties of CdS quantum dot covered by novel polymer chains

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T.Ishi, Y. Nagasaki

    Proc. 26th Int. Conf. Phys. Of Semicond.   "CD-ROM H202, 1-4"   2002年

    　詳細を見る

  • Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation

    M. Inada, H. Nakagawa, I. Umezu, A. Sugimura

    Applied Surface Science   197-198   666 - 669   2002年

    　詳細を見る

    記述言語：英語  

    We examined reactive pulsed laser ablation of silicon target in hydrogen atmosphere to form hydrogenated silicon nanoparticles. A correlation between hydrogen pressure and sample properties or structure was investigated by varying hydrogen pressure from 5 to 532 Pa. We could form hydrogenated silicon nanoparticles above 30 Pa. The size of nanoparticles could be changed by controlling hydrogen pressure. The bonding configuration of silicon and hydrogen changes between 20 and 30 Pa, which is demarcation of the sample structure from film-like to nanoparticles. These results imply reactive laser ablation has a possibility to produce a well-designed sample both size and bonding configuration. © 2002 Elsevier Science B.V. All rights reserved.

    DOI： 10.1016/S0169-4332(02)00437-3

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  • Conduction-type control of Ge films grown on (NH4)2S-treated GaAs by molecular beam epitaxy

    M. Inada, T. Fujishima, I. Umezu, A. Sugimura, S. Yamada

    Journal of Crystal Growth   227-228   791 - 795   2001年7月

    　詳細を見る

    記述言語：英語  

    We have performed epitaxial growth of Ge films on (NH4)2S-treated GaAs (0 0 1) substrates under various growth temperatures using molecular beam epitaxy. We confirmed that this sulfur passivation is quite effective for preventing the oxidation of GaAs surface. Thus, the Ge films were grown epitaxially on GaAs substrate without thermal cleaning. The electric properties of Ge films were investigated using Hall measurement and it was found that the conduction type of Ge films can be controlled by growth temperature. The Ga-S bond is thought to be the key for conduction type control, although the details are not identified yet. © 2001 Elsevier Science B.V.

    DOI： 10.1016/S0022-0248(01)00862-4

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  • Photoluminescence from Nanoscale Si ina-siOx Matrix

    Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

    Mat. Res. Soc. Symp. Proc.   "638, F5.19-F5.19.6"   2001年

    　詳細を見る

  • Many body effect inphoto-conmductivity in InAs/GaAs self assembled quantum dots

    Mitsuru Inada, K. Ohnishi, I.Umezu, P.O.Vaccaro, A.Sugimura

    Mat. Res. Soc. Symp. Proc.   642 J3.3.1-J3.3.6   2001年

    　詳細を見る

  • Loacl Magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2 査読

    Mitsuru Inada, Naoki Yoneyama, Takahiko Sasaki, Norio Kobayashi, syoji Yamada

    Synthtic Metals   120, 815-816   2001年

    　詳細を見る

  • Effects of surface passivation of silicon nanocrystabilities prepared by pulsed laser ablation

    Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

    2001年

    　詳細を見る

  • Effect of Oxygen and nitrogen plasma treatment on the surface of silicon nanocrystallities

    Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

    2001年

    　詳細を見る

  • Formation of Si-based compounds by reactive pulsed laser ablation technique

    Mitsuru Inada, I.Umezu, K.Kohno, T.Yamauchi, A.Sugimura

    2001年

    　詳細を見る

  • Lateral photo-conductance via in-plane inter-dot tunneling in self-assembled inAs/GaAs quantum dot ensembles

    Mitsuru Inada, K.Ohnishi, I.Umezu, A.Sugimura, P.O.Vaccaro

    Proc. 25th Int. Conf. Phys. of Semicond.   "CD-ROM, 1063-1064"   2000年

    　詳細を見る

  • Quanturn hole transport in GaAs-Ge-GaAs lateral narrow junctions

    Mitsuru Inada, S.Yamada

    1999年

    　詳細を見る

  • Fiest order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, T.Sasaki, T.Nishizaki, N.Kobayashi, S.Yamada, T. Fukase

    1999年

    　詳細を見る

▼全件表示

講演・口頭発表等

  • Siナノ結晶集合体における電子輸送特性

    宜保 学, 稲田 貢, 梅津郁朗, 齊藤 正, 杉村 陽

    第69回応用物理学会学術講演会  2008年 

    　詳細を見る

  • Siナノ結晶集合体へのPイオンドープ

    平田 圭, 宜保 学, 吉田謙一, 稲田 貢, 梅津郁朗, 長町信治, 齊藤 正, 杉村 陽

    第69回応用物理学会学術講演会  2008年 

    　詳細を見る

  • Scanning Tunneling Microscopy of The Porphyrin-based Molecules on TiO2 Surface

    Mitsuru Inada, L.Scifo, S.Tanaka, B.Grevin, H.Suzuki, S.Makino

    13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques(STM'05)  2008年 

    　詳細を見る

  • Collective transport in silicon nanocrystal assembly

    M. Gibo, M. Inada, T. Saitoh, I. Umezu, A. Sugimura

    2008 International Meeting for Future of Electron Devices, Kansai (2008 IMFEDK)  2008年 

    　詳細を見る

    開催地：Osaka, Japan  

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  • Au(III)基板上に堆積したポルフィリン誘導体分子のSTM観察

    稲田 貢, 田中秀吉, 上門敏也, 鈴木仁, 益子信郎

    第52回応用物理学関係連合講演会  2005年 

    　詳細を見る

  • 水素化Siナノ決勝を活性層に持つEL素子の発光波長制御

    稲田 貢, 小山基彦, 今井俊和, 梅津郁朗, 杉村陽

    第65回応用物理学会学術講演会  2004年 

    　詳細を見る

  • Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

    Mitsuru Inada, Ikurou Umezu, Shukichi Tanaka, Shinro Mashiko, Akira Sugimura

    "Mat. Res. Soc. Symposium (2004 Mrs fall meeting), Boston, USA"  2004年 

    　詳細を見る

  • Scanning tunnering microscopy observation of porphyrin molecules deposited on Au(III) substrate

    Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mashiko

    "The International Conference on Nano-molecular Electronics(ICNME2004), Kobe, Japan"  2004年 

    　詳細を見る

  • 非接触型原子間力顕微鏡によるSTO単結晶表面の原始スケール観察

    稲田 貢, 田中秀吉, 鈴木仁, 上門敏也, 益子信郎

    日本物理学会2004年秋季大会  2004年 

    　詳細を見る

  • Correlation between electronic structure and chemical bond on the surface of hydrogeneted silicon nanocrystallities

    Mitsuru Inada, I.Umezu, T.Makino, M.Takata, A.Sugimura

    "27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004年 

    　詳細を見る

  • Correlation between PL emission band and growth of oxide layer on surface of silicon nanocrystallites

    Mitsuru Inada, I.Umezu, M.Koyama, T.Hasegawa, K.Matsumoto, A.sugimura

    "27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004年 

    　詳細を見る

  • Preparation of surface controleled silicon nanocrystallites by pulsed laser ablation

    Mitsuru Inada, I.Umezu, T.Makino, A.Sugimura

    "27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004年 

    　詳細を見る

  • レーザーアブレーションにおけるSiと水素の反応

    稲田 貢, 木村巧, 梅津郁朗, 杉村陽

    第65回応用物理学会学術講演会  2004年 

    　詳細を見る

  • Study of silicon nanocrystal prepared by pulsed laser ablation in H2 gas

    Mitsuru Inada, Kimihisa Matsumoto, Hiroyuki Nakagawa, Ikurou Umezu, Akira Sugimura

    甲南大学紀要 理工学編  2003年 

    　詳細を見る

  • Inter-dot electron transport in coupled InAs quantum dots under magnetic field

    Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A. Sugimura

    "The 13th International Conference on Nonequilibrium Carrier Dynamics in semiconductors (HCIS-13), Mondene, Italy"  2003年 

    　詳細を見る

  • Nanoparticle formation and chemical reactions in the silicon laser ablation plume with a hydrogen gas atmosphere

    Mitsuru Inada, T.Kimura, T.Makino, I.Umezu, A.Sugimura

    "7th Int. Conf. on Laser Ablation (COLA '03), Crete, Greece"  2003年 

    　詳細を見る

  • Structural and Optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

    Mitsuru Inada, T.Makino, K.Yoshida, I.Umezu, A.Sugimura

    "7th Int. Conf. on Laser Ablation (COLA '03) , Crete, Greece"  2003年 

    　詳細を見る

  • "Correlation between surface oxide and photolu,imescene properties of si nanoparticles prepared by pulsed laser ablation"

    Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

    "7th Int. Conf. on Laser Ablation (COLA '03), Crete, Greece"  2003年 

    　詳細を見る

  • Optical and transport studies in coupled InAs quantum dots embedded in GaAs

    Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

    "The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003年 

    　詳細を見る

  • Recombination process of CdS quantum dot covered by novel Polymer Chains

    Mitsuru Inada, I. Umezu, R.Koizumi, A.Sugimoto, T.Makino, A.Sugimura, Y.sunaga, T.Ishii, Y. Nagasaki

    "The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003年 

    　詳細を見る

  • Effects of plasma surface treatment on the surface of silicon nanocrystal

    Mitsuru Inada, I. Umezu, K.Jyuoji, K.Yoshida, T.Makino, A.

    "The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003年 

    　詳細を見る

  • Effects of hydrogen on photoluminescene of Si nanoparticles formed by pulsed laser ablation

    Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

    "E-MRS 2002 spring meeting 5, Strasbourg, France"  2002年 

    　詳細を見る

  • Microstructure in a-Siox prepared by RF sputtering method and its effect on radiative recombination mechanism

    Mitsuru Inada, Ken-ichi Yoshida, Ikurou Umezu, Akira Sugimura

    甲南大学紀要 理工学編  2002年 

    　詳細を見る

  • Observation of inter-dot electron transport via spin-split states in InAs quantum dot

    Mitsuru Inada, S. Sato, I. Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002年 

    　詳細を見る

  • Optical properties of CdS quantum dot covered by novel polymer chains

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T.Ishi, Y. Nagasaki

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002年 

    　詳細を見る

  • "Effects of nanoscale anodization of silicon surface on the photolu,imescene properties"

    Mitsuru Inada, I.Umezu, T. Yoshida, K.Matsumoto, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002年 

    　詳細を見る

  • Optical properties of CdS nanosphere possesing tethered PEG chains on the surface

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, T.Ishi, Y.Nagasaki

    "E-MRS 2002 spring meeting, Strasbourg, France"  2002年 

    　詳細を見る

  • Optical properties of CdS Nanocrystal Covered by Polymer Chains on the surface

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T. Ishi, Y. Nagasaki

    "The 8yh International Conference on Electronic Materials , Xian, China"  2002年 

    　詳細を見る

  • Correlation between structure and nonradiative recombination process in silicon nanocrystallites

    Mitsuru Inada, I.Umezu, H.Nakagawa, K.Matsumoto, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002年 

    　詳細を見る

  • Correlation between structure and recombination process in Si-based amorphous alloys prepared by RF sputtering

    Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002年 

    　詳細を見る

  • 水素化したSiナノ微粒子の発光特性

    稲田 貢, 梅津郁朗, 杉村陽

    第63回応用物理学会学術講演会  2002年 

    　詳細を見る

  • Formation of Si-based compounds by reactive pulsed laser ablation technique

    Mitsuru Inada, I.Umezu, K.Kohno, T.Yamauchi, A.Sugimura

    "19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001年 

    　詳細を見る

  • Effects of surface passivation of silicon nanocrystabilities prepared by pulsed laser ablation

    Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

    "6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001年 

    　詳細を見る

  • Preparation of SiNx Film by pulsed laser ablation in nitrogen gas ambient

    Mitsuru Inada, I.Umezu, K.Kohno, T.Yamaguchi, A.Sugimura

    "6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001年 

    　詳細を見る

  • Nano-oxidation of amorphous silicon surface with an atomic force microscope

    Mitsuru Inada, I.Umezu, T.Yoshida, K.Matsumoto, A.Sugimura

    "19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001年 

    　詳細を見る

  • Effect of Oxygen and nitrogen plasma treatment on the surface of silicon nanocrystallities

    Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

    "19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001年 

    　詳細を見る

  • Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation

    Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

    "6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001年 

    　詳細を見る

  • Many body effect inphoto-conmductivity in InAs/GaAs self assembled quantum dots

    Mitsuru Inada, K. Ohnishi, I.Umezu, P.O.Vaccaro, A.Sugimura

    "Mat. Rea. Soc. Symposium (2000 MRS fall meeting) , Boston, USA"  2001年 

    　詳細を見る

  • Photoluminescence from Nanoscale Si ina-siOx Matrix

    Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

    "Mat. Rea. Soc. Symposium (2000 MRS fall meeting) , Boston, USA"  2001年 

    　詳細を見る

  • Lateral photo-conductance via in-plane inter-dot tunneling in self-assembled inAs/GaAs quantum dot ensembles

    Mitsuru Inada, K.Ohnishi, I.Umezu, A.Sugimura, P.O.Vaccaro

    "25th Int. Conf. Physics of Semiconductors (ICPS25) , Osaka, Japan"  2000年 

    　詳細を見る

  • Conduction-type control of Ge films grown on GaAs by molecular beam epitaxy

    Mitsuru Inada, T. Fujishima, I.Umezu, A.sugimura, S.Yamada

    "10th Int. Conf. Molecular Beam Epitaxy (MBE X) , Beijing, China"  2000年 

    　詳細を見る

  • Loacl magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, N.Yonenaga, T.Sasaki, N.Kobayashi, S.Yamada

    "Int. Conf. on Science and Technology of Synthetic Metals (ICSM2000), Gastein, Austria"  2000年 

    　詳細を見る

  • Fiest order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, T.Sasaki, T.Nishizaki, N.Kobayashi, S.Yamada, T. Fukase

    "Int. Conference on Physics and Chemistry of Molecular and Oxide Superconductors (MOS99), Stockholm, sweden"  1999年 

    　詳細を見る

  • Coulomb Blockade Effects at Ge Dot Burried in p-GaAs constrictions

    Mitsuru Inada, S.Yamada

    "The 9th International Conference on Narrow Gap Semiconductors (NG9) Berlin, Germany"  1999年 

    　詳細を見る

  • Quanturn hole transport in GaAs-Ge-GaAs lateral narrow junctions

    Mitsuru Inada, S.Yamada

    "The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) , Kyoto, Japan"  1999年 

    　詳細を見る

  • Fabrication of GaAs-Ge-GaAs Lateral Narrow Junctions and Low-Temperaure Hole Transport

    Mitsuru Inada, T.Kikutani, H.Hori, S.Yamada

    "Int. Workshop on NANO-PHYSICS AND ELECTRONICS(NPE'97) , Tokyo, Japan"  1997年 

    　詳細を見る

▼全件表示

教育内容・方法の工夫（授業評価等を含む）

  • 力学や電磁気学など大学初年時に履修する科目では、物理現象を数学的な表現で「記述」する手法を学習するが、その際、机上の数式とそれが示す物理現象との対応付けの可否がその後の理解度に大きく影響するように感じている。したがって講義中に簡単な演示実験を行い「数学的表現」と「物理現象」とのリンク付けを促している。また3年次生対象の実験科目（専門科目：物理学実験）では研究室配属直前での履修ということもあり「よく観察して深く考察する」ことに注力している。そのために例えば自前のテキストでは実験方法についてその手順を細かく記すことはせずアウトラインを記すにとどめて自主的に問題解決法を導くようにしている。 　講義の補足資料や実験系のテキストなどはすべてWeb上に公開し、適宜アップデートすることでより良い資料提供を心がけている。

作成した教科書、教材、参考書

  • 講義系科目では液体窒素を用いた演示実験、運動量・角運動量保存則、電気力線と等電位面、磁力線、電荷と帯電効果などの演示実験教材など。また実験系科目では実験テーマごとのテキストを作成している。

教育方法・教育実践に関する発表、講演等

  • 　特になし

その他教育活動上特記すべき事項

  • 高大連携においては「ナノテクノロジーと物理学」と称して、大学で学ぶ量子力学の紹介とその応用分野であり我々の生活と密接に関係しているナノテクノロジーとの関連について、高校生の好奇心を刺激するように留意して取り組んだ。