Updated on 2026/04/22

写真a

 
INADA Mitsuru
 
Organization
Faculty of Engineering Science Professor
Title
Professor
Contact information
メールアドレス
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Degree

  • 博士(材料科学) ( 2000.3 )

Research Interests

  • 低次元物性;低温・強磁場物性

  • 低次元物性

  • 低温・強磁場物性

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

Education

  • Japan Advanced Institute of Science and Technology   Graduate School, Division of Materials Science

    2000

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    Country: Japan

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  • Kyoto University of Education   Faculty of Education

    - 1994

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    Country: Japan

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Professional Memberships

Papers

  • Appearance of Ferromagnetic Property for Si Nanopolycrystalline Body and Vanishing of Electrical Resistances at Local High Frequencies Reviewed

    稲田 貢, 佐伯 拓, 飯田 幸雄

    Journal of Nanomaterials   Vol. 2018, ID 9260280, pp1-12.   2018.11

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  • Bandgap bowing in Ni1-xMgxO alloy

    Tadashi Saitoh, Kazutoshi Kinoshita, Mitsuru Inada

    Applied Physics Letters   112 ( 4 )   2018.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Institute of Physics Inc.  

    DOI: 10.1063/1.5009699

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  • Improvement in wettability of porous Si by carboxylate termination Reviewed

    Masanori Sakakibara, Kimihisa Matsumoto, Kazuhide Kamiya, Shigeki Kawabata, Mitsuru Inada, Shinya Suzuki

    Jpn. J. Appl. Phys.   57, 02CB16-1-6   2018.1

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  • Aluminum Nano-polycrystalline Substance with Ferromagnetics and Application to High-Frequency Core Inductor Reviewed

    Mitsuru Inada, Yukio Iida, Taku Saiki, Shinichirou Masuda

    J. Electrical and Electronic Engineering   5, 98-103   2017.6

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  • Luminescence Property of Water Dispersed Porous Si Terminated by Organic Molecules Reviewed

    Kamiguchi M., Sakakibara M., Matsumoto K., Kamiya K., Nomura T., Kawabata S., Inada M., Suzuki S.

    Transactions of the Materials Research Society of Japan   41, 347-350 ( 4 )   347 - 350   2016.12

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    Language:English   Publisher:The Materials Research Society of Japan  

    <p>The optical properties of porous Si terminated by various hydrophilic organic molecules were investigated to clarify the influence of the molecular length on the optical properties. In the case of porous Si terminated with hydrophilic organic molecules, surface oxidation of porous Si was restrained and the photoluminescence (PL) properties were more stable than those of the as-prepared sample. The PL of porous Si terminated with organic molecules was caused by the quantum size effect, which was confirmed on the basis of measured PL decay curves. The molecular length of the surface-terminated molecules did not affect the PL properties. Therefore, surface termination with hydrophilic organic molecules is an effective method to improve the stability of the optical properties of porous Si.</p>

    DOI: 10.14723/tmrsj.41.347

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  • Band gap tuning of Ni1-x MgxO films by radio-frequency sputter deposition for deep-ultraviolet photodetectors (vol 8, 105801, 2015)

    Hiroki Nishitani, Kohei Ohta, Sosuke Kitano, Ryosuke Hamano, Mitsuru Inada, Tomohiro Shimizu, Shoso Shingubara, Hiromitsu Kozuka, Tadashi Saitoh

    APPLIED PHYSICS EXPRESS   9 ( 3 )   2016.3

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  • Band gap tuning of Ni1-xMgxO films by radio-frequency sputter deposition for deep-ultraviolet photodetectors Reviewed

    Hiroki Nishitani, Kohei Ohta, Sosuke Kitano, Ryosuke Hamano, Mitsuru Inada, Tomohiro Shimizu, Shoso Shingubara, Hiromitsu Kozuka, Tadashi Saitoh

    APPLIED PHYSICS EXPRESS   8 ( 10 )   2015.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/APEX.8.105801

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  • Crossover from Efros–Shklovskii variable range hopping to nearest-neighbor hopping in silicon nanocrystal random network Reviewed

    Inada Mitsuru, Yamamoto Hiroshi, Gibo Manabu, Ueda Rieko, Umezu Ikurou, Tanaka Shukichi, Saitoh Tadashi, Sugimura Akira

    Appl. Phys. Express   8, 105001-1-3 ( 10 )   105001 - 105001   2015.9

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    Language:English   Publisher:Institute of Physics  

    We investigate how random structure affects the electrical transport of a silicon nanocrystal network. The temperature dependence of conductivity follows G ∼ exp[−(T<inf>0</inf>/T)<sup>1/2</sup>] between 70 and 160 K. By using T<inf>0</inf>= 5765 K obtained by data fitting, the electron localization length is estimated to be 4.1 nm, which corresponds to the mean diameter of silicon nanocrystals. Above 160 K, G follows Arrhenius-like behavior. These temperature dependences are well described by Efros–Shklovskii variable range hopping (ES VRH) with a Coulomb gap and nearest-neighbor hopping (NNH). A crossover between ES VRH and NNH is observed at 160 K.

    DOI: 10.7567/APEX.8.105001

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  • Optical Properties of 2-Methacryloyloxyethyl Phosphorylcholine-Protected Au-4 Nanoclusters and Their Fluorescence Sensing of C-Reactive Protein Reviewed

    Junya Yoshimoto, Arunee Sangsuwan, Issey Osaka, Kazuko Yamashita, Yasuhiko Iwasaki, Mitsuru Inada, Ryuichi Arakawa, Hideya Kawasaki

    JOURNAL OF PHYSICAL CHEMISTRY C   119 ( 25 )   14319 - 14325   2015.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.jpcc.5b03934

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  • Marked increase in photoluminescence from porous Si aged in ethanol solution Reviewed

    Matsumoto Kimihisa, Nishio Ryosuke, Nomura Takashi, Kamiya Kazuhide, Inada Mitsuru, Suzuki Shinya

    Jpn. J. Appl. Phys.   54, 021301-1-4 ( 2 )   21301 - 21301   2015.1

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    Language:English   Publisher:Institute of Physics  

    Photoluminescence properties of porous Si aged in ethanol solution and porous Si films aged in ambient air were studied. It was shown that the photoluminescence properties of porous Si strongly depend on aging time and environmental conditions. The photoluminescence intensity of porous Si dispersed in ethanol solution increases 50-fold with aging for 7 d. This increase is accompanied by increases in Si–O bond density and lifetime, indicating that the electron–hole pair is strongly confined by the formation of surface oxide thin films. The photoluminescence intensity of porous Si films decreases with aging in ambient air, suggesting that nonradiative recombination centers are formed by natural oxidation.

    DOI: 10.7567/JJAP.54.021301

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  • Correlation between crystallinity and mid-infrared optical absorption spectra of silicon supersaturated with sulfur Reviewed

    Ikurou Umezu, Katsuki Nagao, Tatsuya Nakai, Muneyuki Naito, Mitsuru Inada, Tadashi Saitoh, Tamao Aoki, Akira Sugimura

    Materials Research Society Symposium Proceedings   1738 ( January )   1 - 6   2015

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Materials Research Society  

    DOI: 10.1557/opl.2015.278

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  • Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting Reviewed

    Ikurou Umezu, Muneyuki Naito, Daisuke Kawabe, Yusuke Koshiba, Katsuki Nagao, Akira Sugimura, Tamao Aoki, Mitsuru Inada, Tadashi Saitoh, Atsushi Kohno

    Appl. Phys. A   117, 155-159   2014.2

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  • Microwave-assisted synthesis of near-infrared-luminescent ovalbumin-protected gold nanoparticles as a luminescent glucose sensor

    Junya Yoshimoto, Naoki Tanaka, Mitsuru Inada, Ryuichi Arakawa, Hideya Kawasaki

    Chemistry Letters   43 ( 6 )   793 - 795   2014

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Chemical Society of Japan  

    DOI: 10.1246/cl.140126

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  • Narrowband, Visible-Blind UV-A Sensor Based on a Mg0.52Zn0.48O Film Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target

    Yuki Kohama, Takuya Nagai, Mitsuru Inada, Tadashi Saitoh

    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING   120463-01-04   2014

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1155/2014/120463

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  • Single nanosized FeO nanocrystals with photoluminescence properties

    Sugii, Yuta, Inada, Mitsuru, Yano, Hiroki, Obora, Yasushi, Iwasaki, Yasuhiko, Arakawa, Ryuichi, Kawasaki, Hideya

    Journal of Nanoparticle Research   15 ( 1 )   2013

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s11051-012-1379-2

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  • AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

    Tomohiro Shimizu, Takuya Yamaguchi, Fumihiro Inoue, Mitsuru Inada, Shoso Shingubara

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 11 )   2012.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.51.11PE02

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  • Comparison of electrochromic properties of NiO films prepared by chemical bath deposition and spin coating Reviewed

    Hiroyuki Nakashima, Mitsuru Inada, Tadashi Saitoh

    IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai   152 - 153   2012

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/IMFEDK.2012.6218627

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  • Evaluation of morphology and crystal structure of Si nanowires prepared by singlestep metal assisted etching

    Takuya Yamaguchi, Tomohiro Shimizu, Fumihiro Inoue, Chounge Wang, Mitsuru Inada, Tadashi Saitoh, Shoso Shingubara

    IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai   1439. AA03-02   84 - 85   2012

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1109/IMFEDK.2012.6218593

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  • Photoluminescence from Excited Energy Bands in Au(25) Nanoclusters

    Sakanaga, Isamu, Inada, Mitsuru, Saitoh, Tadashi, Kawasaki, Hideya, Iwasaki, Yasuhiko, Yamada, Toshiki, Umezu, Ikurou, Sugimura, Akira

    Applied Physics Express   4 ( 9 )   2011

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/APEX.4.095001

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  • Development of precise tuning method of inter-dot spacing and resonant energy transfer between Au clusters Reviewed

    Inada, Mitsuru, Yoshihara, Yoshihiro, Kawasaki, Hideya, Iwasaki, Yasuhiko, Saitoh, Tadashi, Umezu, Ikurou, Sugimura, Akira, Cabrini, S, Mokari, T

    Nanophotonic Materials Viii   8094   2011

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1117/12.893716

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  • One-pot Preparation of Water-soluble Blue Luminescent Silica Flakes via Microwave Heating

    Iwasaki, Y, Shibata, Y, Watanabe, A, Inada, M, Kawasaki, H, Uchino, T

    Chemistry Letters   39 ( 4 )   2010

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1246/cl.2010.370

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  • Surfactant-free solution synthesis of fluorescent platinum subnanoclusters

    Kawasaki, H, Yamamoto, H, Fujimori, H, Arakawa, R, Inada, M, Iwasaki, Y

    Chemical Communications   46 ( 21 )   2010

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/b925117k

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  • Stability of the DMF-Protected Au Nanoclusters: Photochemical, Dispersion, and Thermal Properties

    Kawasaki, H, Yamamoto, H, Fujimori, H, Arakawa, R, Iwasaki, Y, Inada, M

    Langmuir   26 ( 8 )   2010

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/la9038842

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  • Siナノ結晶集合体へのPイオンドープの効果

    平田 圭, 宜保 学, 吉田 謙一, 稲田 貢, 梅津郁郎, 長町信治, 齊藤 正, 杉村 陽

    甲南大学紀要   vol. 56, no. 1, pp.21-30   2009

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  • STM observation of zinc(II) bridled chiroporphyrin molecules on titanium dioxide surface

    Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Shinro Mashiko, Lorette Scifo, Benjamin Grevin, Anna Castaings, Jean-Claude Marchon

    THIN SOLID FILMS   516 ( 9 )   2582 - 2585   2008.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2007.04.154

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  • Oxidation processes of surface hydrogenated silicon nanocrystallites prepared by pulsed laser ablation and their effects on the photoluminescence wavelength

    Ikurou Umezu, Akira Sugimura, Toshiharu Makino, Mitsuru Inada, Kimihisa Matsumoto

    JOURNAL OF APPLIED PHYSICS   103 ( 2 )   2008.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.2832392

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  • Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas

    Ikurou Umezu, Akira Sugimura, Mitsuru Inada, Toshiharu Makino, Kimihisa Matsumoto, Masatoshi Takata

    PHYSICAL REVIEW B   76 ( 4 )   2007.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevB.76.045328

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  • Mechanism of electron-hole pair generation and light emission for electro-luminescence devices with silicon nano-crystals prepared by laser ablation method Reviewed

    A. Sugimura, M. Koyama, M. Inada, T. Yoshida, I. Umezu

    PHYSICS OF SEMICONDUCTORS, PTS A AND B   893   1433 - +   2007

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    Language:English   Publishing type:Research paper (international conference proceedings)  

    DOI: 10.1063/1.2730444

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  • Frequency-modulated non-contact atomic force microscopy study of heat-treated oxide surface with organic molecules Reviewed

    Shukichi Tanaka, Hitoshi Suzuki, Mitsuru Inada, Toshiya Kamikado, Shinro Mashiko

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 3 B )   2045 - 2048   2006.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.2045

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  • Scanning tunneling microscopy of porphyrin-based molecules on TiO2 surfaces

    M Inada, L Scifo, S Tanaka, B Grevin, H Suzuki, S Mashiko

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 3B )   2103 - 2105   2006.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1143/JJAP.45.2103

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  • Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation Reviewed

    T Makino, M Inada, Umezu, I, A Sugimura

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   38 ( 18 )   3507 - 3511   2005.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0022-3727/38/18/028

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  • Non-contact AFM study of the oxidized surface of single-crystalline SrTiO3 with porphyrin-based molecules

    S Tanaka, H Suzuki, M Inada, T Kamikado, S Mashiko

    NANOTECHNOLOGY   16 ( 3 )   S107 - S111   2005.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0957-4484/16/3/020

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  • Correlation between Natural Oxidation Process and Photoluminescence Properties of Hydrogenated Si Nanocrystallites Prepared by Pulsed Laser Ablation Reviewed

    Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Akira Sugimura

    Jpn.J.Appl. Phys.   44, 8742-8746   2005.1

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  • Correlation between surface oxide and photoluminescence properties of Si nanoparticles prepared by pulsed laser ablation

    Umezu, I, K Matsumoto, M Inada, T Makino, A Sugimura

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   79 ( 4-6 )   1545 - 1547   2004.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s00339-004-2844-2

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  • Inter-dot electron transport in coupled InAs quantum dots under a magnetic field

    M Inada, Umezu, I, P Vaccaro, S Yamada, A Sugimura

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   19 ( 4 )   S54 - S55   2004.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0268-1242/19/4/020

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  • Recombination process of US quantum dot covered by novel polymer chains

    Umezu, I, R Koizumi, A Sugimoto, M Inada, T Makino, A Sugimura, Y Sunaga, T Ishii, Y Nagasaki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   1102 - 1105   2004.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physe.2003.11.187

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  • Optical and transport studies in coupled InAs quantum dots embedded in GaAs

    M Inada, Umezu, I, PO Vaccaro, S Yamada, A Sugimura

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   317 - 321   2004.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physe.2003.11.020

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  • Reaction between nitrogen gas and silicon species during pulsed laser ablation

    Umezu, I, M Inada, K Kohno, T Yamaguchi, T Makino, A Sugimura

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   21 ( 5 )   1680 - 1682   2003.9

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    DOI: 10.1116/1.1598974

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  • Effects of hydrogenation on photoluminescence of Si nanoparticles formed by pulsed laser ablation

    M Inada, H Nakagawa, Umezu, I, A Sugimura

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   101 ( 1-3 )   283 - 285   2003.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(02)00702-X

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  • Optical properties of US nanocrystal covered by polymer chains on the surface

    Umezu, I, R Koizumi, K Mandai, T Aoki-Matsumoto, K Mizuno, M Inada, A Sugimura, Y Sunaga, T Ishii, Y Nagasaki

    MICROELECTRONIC ENGINEERING   66 ( 1-4 )   53 - 58   2003.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0167-9317(03)00024-8

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  • Effect of gas pressure on reactive pulsed laser ablation of a silicon target

    M Inada, Umezu, I, A Sugimura

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   21 ( 1 )   84 - 86   2003.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/1.1527898

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  • Effect of structure on radiative recombination processes in amorphous silicon suboxide prepared by rf sputtering

    K Yoshida, Umezu, I, N Sakamoto, M Inada, A Sugimura

    JOURNAL OF APPLIED PHYSICS   92 ( 10 )   5936 - 5941   2002.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.1512970

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  • Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient

    Umezu, I, T Yamaguchi, K Kohno, M Inada, A Sugimura

    APPLIED SURFACE SCIENCE   197   376 - 378   2002.9

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  • Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation

    M Inada, H Nakagawa, Umeza, I, A Sugimura

    APPLIED SURFACE SCIENCE   197   666 - 669   2002.9

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  • Nanoscale anodization of an amorphous silicon surface with an atomic force microscope

    Umezu, I, T Yoshida, K Matsumoto, A Sugimura, M Inada

    APPLIED PHYSICS LETTERS   81 ( 8 )   1492 - 1493   2002.8

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    DOI: 10.1063/1.1501452

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  • Effects of argon and hydrogen plasmas on the surface of silicon

    Umezu, I, K Kohno, K Aoki, Y Kohama, A Sugimura, M Inada

    VACUUM   66 ( 3-4 )   453 - 456   2002.8

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  • Nano-oxidation of an amorphous silicon surface with an atomic force microscope

    Umezu, I, T Yoshida, K Matsumoto, M Inada, A Sugimura

    JOURNAL OF NON-CRYSTALLINE SOLIDS   299   1090 - 1094   2002.4

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  • Photoluminescence properties of amorphous silicon-based oxygen and hydrogen alloys

    Umezu, I, K Yoshida, N Sakamoto, T Murota, Y Takashima, M Inada, A Sugimura

    JOURNAL OF APPLIED PHYSICS   91 ( 4 )   2009 - 2013   2002.2

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  • Deposition of silicon nitride films by pulsed laser ablation of the Si target in nitrogen gas

    Umezu, I, K Kohno, T Yamaguchi, A Sugimura, M Inada

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS   20 ( 1 )   30 - 32   2002.1

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  • Conduction-type control of Ge films grown on (NH4)(2)S-treated GaAs by molecular beam epitaxy

    M Inada, T Fujishima, Umezu, I, A Sugimura, S Yamada

    JOURNAL OF CRYSTAL GROWTH   227   791 - 795   2001.7

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  • Local magnetization measurements of the organic superconductor kappa-(BEDT-TTF)(2)Cu(NCS)(2)

    N Yoneyama, T Sasaki, N Kobayashi, N Inada, S Yamada

    SYNTHETIC METALS   120 ( 1-3 )   815 - 816   2001.3

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  • Correlation between photoluminescence intensity and micro structure in amorphous silicon films prepared by reactive RF sputtering

    Umezu, I, T Murota, M Kawata, Y Takashima, K Yoshida, M Inada, A Sugimura

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   39 ( 8B )   L844 - L846   2000.8

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  • Quantum hole transport in GaAs-Ge-GaAs lateral narrow junctions

    M Inada, S Yamada

    PHYSICA B   272 ( 1-4 )   78 - 81   1999.12

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  • First order vortex phase transition in the organic superconductor kappa-(BEDT-TTF)(2)Cu(NCS)(2)

    M Inada, T Sasaki, T Nishizaki, N Kobayashi, S Yamada, T Fukase

    JOURNAL OF LOW TEMPERATURE PHYSICS   117 ( 5-6 )   1423 - 1427   1999.12

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  • Ge selective growth on (001) GaAs substrates by molecular beam epitaxy

    M Inada, H Hori, S Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 4A )   L398 - L400   1999.4

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  • Fabrication of GaAs-Ge-GaAs lateral narrow junctions and low-temperature hole transport

    M Inada, T Kikutani, H Hori, S Yamada

    SOLID-STATE ELECTRONICS   42 ( 7-8 )   1539 - 1542   1998.7

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Presentations

  • Siナノ結晶集合体における電子輸送特性

    宜保 学, 稲田 貢, 梅津郁朗, 齊藤 正, 杉村 陽

    第69回応用物理学会学術講演会  2008 

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  • Collective transport in silicon nanocrystal assembly

    M. Gibo, M. Inada, T. Saitoh, I. Umezu, A. Sugimura

    2008 International Meeting for Future of Electron Devices, Kansai (2008 IMFEDK)  2008 

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    Venue:Osaka, Japan  

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  • Scanning Tunneling Microscopy of The Porphyrin-based Molecules on TiO2 Surface

    Mitsuru Inada, L.Scifo, S.Tanaka, B.Grevin, H.Suzuki, S.Makino

    13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques(STM'05)  2008 

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  • Siナノ結晶集合体へのPイオンドープ

    平田 圭, 宜保 学, 吉田謙一, 稲田 貢, 梅津郁朗, 長町信治, 齊藤 正, 杉村 陽

    第69回応用物理学会学術講演会  2008 

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  • Au(III)基板上に堆積したポルフィリン誘導体分子のSTM観察

    稲田 貢, 田中秀吉, 上門敏也, 鈴木仁, 益子信郎

    第52回応用物理学関係連合講演会  2005 

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  • Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

    Mitsuru Inada, Ikurou Umezu, Shukichi Tanaka, Shinro Mashiko, Akira Sugimura

    "Mat. Res. Soc. Symposium (2004 Mrs fall meeting), Boston, USA"  2004 

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  • 水素化Siナノ決勝を活性層に持つEL素子の発光波長制御

    稲田 貢, 小山基彦, 今井俊和, 梅津郁朗, 杉村陽

    第65回応用物理学会学術講演会  2004 

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  • レーザーアブレーションにおけるSiと水素の反応

    稲田 貢, 木村巧, 梅津郁朗, 杉村陽

    第65回応用物理学会学術講演会  2004 

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  • Preparation of surface controleled silicon nanocrystallites by pulsed laser ablation

    Mitsuru Inada, I.Umezu, T.Makino, A.Sugimura

    "27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004 

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  • Correlation between PL emission band and growth of oxide layer on surface of silicon nanocrystallites

    Mitsuru Inada, I.Umezu, M.Koyama, T.Hasegawa, K.Matsumoto, A.sugimura

    "27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004 

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  • Correlation between electronic structure and chemical bond on the surface of hydrogeneted silicon nanocrystallities

    Mitsuru Inada, I.Umezu, T.Makino, M.Takata, A.Sugimura

    "27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004 

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  • 非接触型原子間力顕微鏡によるSTO単結晶表面の原始スケール観察

    稲田 貢, 田中秀吉, 鈴木仁, 上門敏也, 益子信郎

    日本物理学会2004年秋季大会  2004 

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  • Scanning tunnering microscopy observation of porphyrin molecules deposited on Au(III) substrate

    Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mashiko

    "The International Conference on Nano-molecular Electronics(ICNME2004), Kobe, Japan"  2004 

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  • Study of silicon nanocrystal prepared by pulsed laser ablation in H2 gas

    Mitsuru Inada, Kimihisa Matsumoto, Hiroyuki Nakagawa, Ikurou Umezu, Akira Sugimura

    "Mem. Konan Univ., Sci. Ser"  2003 

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  • Effects of plasma surface treatment on the surface of silicon nanocrystal

    Mitsuru Inada, I. Umezu, K.Jyuoji, K.Yoshida, T.Makino, A.

    "The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003 

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  • Recombination process of CdS quantum dot covered by novel Polymer Chains

    Mitsuru Inada, I. Umezu, R.Koizumi, A.Sugimoto, T.Makino, A.Sugimura, Y.sunaga, T.Ishii, Y. Nagasaki

    "The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003 

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  • Optical and transport studies in coupled InAs quantum dots embedded in GaAs

    Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

    "The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003 

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  • "Correlation between surface oxide and photolu,imescene properties of si nanoparticles prepared by pulsed laser ablation"

    Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

    "7th Int. Conf. on Laser Ablation (COLA '03), Crete, Greece"  2003 

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  • Structural and Optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

    Mitsuru Inada, T.Makino, K.Yoshida, I.Umezu, A.Sugimura

    "7th Int. Conf. on Laser Ablation (COLA '03) , Crete, Greece"  2003 

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  • Nanoparticle formation and chemical reactions in the silicon laser ablation plume with a hydrogen gas atmosphere

    Mitsuru Inada, T.Kimura, T.Makino, I.Umezu, A.Sugimura

    "7th Int. Conf. on Laser Ablation (COLA '03), Crete, Greece"  2003 

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  • Inter-dot electron transport in coupled InAs quantum dots under magnetic field

    Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A. Sugimura

    "The 13th International Conference on Nonequilibrium Carrier Dynamics in semiconductors (HCIS-13), Mondene, Italy"  2003 

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  • Microstructure in a-Siox prepared by RF sputtering method and its effect on radiative recombination mechanism

    Mitsuru Inada, Ken-ichi Yoshida, Ikurou Umezu, Akira Sugimura

    "Mem. Konan Univ., Sci. Ser"  2002 

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  • Effects of hydrogen on photoluminescene of Si nanoparticles formed by pulsed laser ablation

    Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

    "E-MRS 2002 spring meeting 5, Strasbourg, France"  2002 

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  • 水素化したSiナノ微粒子の発光特性

    稲田 貢, 梅津郁朗, 杉村陽

    第63回応用物理学会学術講演会  2002 

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  • Correlation between structure and recombination process in Si-based amorphous alloys prepared by RF sputtering

    Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

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  • Correlation between structure and nonradiative recombination process in silicon nanocrystallites

    Mitsuru Inada, I.Umezu, H.Nakagawa, K.Matsumoto, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

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  • Optical properties of CdS Nanocrystal Covered by Polymer Chains on the surface

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T. Ishi, Y. Nagasaki

    "The 8yh International Conference on Electronic Materials , Xian, China"  2002 

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  • Optical properties of CdS nanosphere possesing tethered PEG chains on the surface

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, T.Ishi, Y.Nagasaki

    "E-MRS 2002 spring meeting, Strasbourg, France"  2002 

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  • "Effects of nanoscale anodization of silicon surface on the photolu,imescene properties"

    Mitsuru Inada, I.Umezu, T. Yoshida, K.Matsumoto, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

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  • Optical properties of CdS quantum dot covered by novel polymer chains

    Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T.Ishi, Y. Nagasaki

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

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  • Observation of inter-dot electron transport via spin-split states in InAs quantum dot

    Mitsuru Inada, S. Sato, I. Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

    "26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

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  • Effects of surface passivation of silicon nanocrystabilities prepared by pulsed laser ablation

    Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

    "6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001 

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  • Formation of Si-based compounds by reactive pulsed laser ablation technique

    Mitsuru Inada, I.Umezu, K.Kohno, T.Yamauchi, A.Sugimura

    "19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001 

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  • Photoluminescence from Nanoscale Si ina-siOx Matrix

    Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

    "Mat. Rea. Soc. Symposium (2000 MRS fall meeting) , Boston, USA"  2001 

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  • Many body effect inphoto-conmductivity in InAs/GaAs self assembled quantum dots

    Mitsuru Inada, K. Ohnishi, I.Umezu, P.O.Vaccaro, A.Sugimura

    "Mat. Rea. Soc. Symposium (2000 MRS fall meeting) , Boston, USA"  2001 

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  • Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation

    Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

    "6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001 

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  • Effect of Oxygen and nitrogen plasma treatment on the surface of silicon nanocrystallities

    Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

    "19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001 

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  • Nano-oxidation of amorphous silicon surface with an atomic force microscope

    Mitsuru Inada, I.Umezu, T.Yoshida, K.Matsumoto, A.Sugimura

    "19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001 

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  • Preparation of SiNx Film by pulsed laser ablation in nitrogen gas ambient

    Mitsuru Inada, I.Umezu, K.Kohno, T.Yamaguchi, A.Sugimura

    "6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001 

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  • Conduction-type control of Ge films grown on GaAs by molecular beam epitaxy

    Mitsuru Inada, T. Fujishima, I.Umezu, A.sugimura, S.Yamada

    "10th Int. Conf. Molecular Beam Epitaxy (MBE X) , Beijing, China"  2000 

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  • Lateral photo-conductance via in-plane inter-dot tunneling in self-assembled inAs/GaAs quantum dot ensembles

    Mitsuru Inada, K.Ohnishi, I.Umezu, A.Sugimura, P.O.Vaccaro

    "25th Int. Conf. Physics of Semiconductors (ICPS25) , Osaka, Japan"  2000 

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  • Loacl magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, N.Yonenaga, T.Sasaki, N.Kobayashi, S.Yamada

    "Int. Conf. on Science and Technology of Synthetic Metals (ICSM2000), Gastein, Austria"  2000 

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  • Coulomb Blockade Effects at Ge Dot Burried in p-GaAs constrictions

    Mitsuru Inada, S.Yamada

    "The 9th International Conference on Narrow Gap Semiconductors (NG9) Berlin, Germany"  1999 

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  • Fiest order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

    Mitsuru Inada, T.Sasaki, T.Nishizaki, N.Kobayashi, S.Yamada, T. Fukase

    "Int. Conference on Physics and Chemistry of Molecular and Oxide Superconductors (MOS99), Stockholm, sweden"  1999 

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  • Quanturn hole transport in GaAs-Ge-GaAs lateral narrow junctions

    Mitsuru Inada, S.Yamada

    "The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) , Kyoto, Japan"  1999 

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  • Fabrication of GaAs-Ge-GaAs Lateral Narrow Junctions and Low-Temperaure Hole Transport

    Mitsuru Inada, T.Kikutani, H.Hori, S.Yamada

    "Int. Workshop on NANO-PHYSICS AND ELECTRONICS(NPE'97) , Tokyo, Japan"  1997 

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Devising educational methods

  • 力学や電磁気学など大学初年時に履修する科目では、物理現象を数学的な表現で「記述」する手法を学習するが、その際、机上の数式とそれが示す物理現象との対応付けの可否がその後の理解度に大きく影響するように感じている。したがって講義中に簡単な演示実験を行い「数学的表現」と「物理現象」とのリンク付けを促している。また3年次生対象の実験科目(専門科目:物理学実験)では研究室配属直前での履修ということもあり「よく観察して深く考察する」ことに注力している。そのために例えば自前のテキストでは実験方法についてその手順を細かく記すことはせずアウトラインを記すにとどめて自主的に問題解決法を導くようにしている。  講義の補足資料や実験系のテキストなどはすべてWeb上に公開し、適宜アップデートすることでより良い資料提供を心がけている。

Teaching materials

  • 講義系科目では液体窒素を用いた演示実験、運動量・角運動量保存則、電気力線と等電位面、磁力線、電荷と帯電効果などの演示実験教材など。また実験系科目では実験テーマごとのテキストを作成している。

Teaching method presentations

  •  特になし

Special notes on other educational activities

  • 高大連携においては「ナノテクノロジーと物理学」と称して、大学で学ぶ量子力学の紹介とその応用分野であり我々の生活と密接に関係しているナノテクノロジーとの関連について、高校生の好奇心を刺激するように留意して取り組んだ。