Crossover from Efros-Shklovskii variable range hopping to nearest-neighbor hopping in silicon nanocrystal random network Reviewed

Mitsuru Inada, Hiroshi Yamamoto, Manabu Gibo, Rieko Ueda, Ikurou Umezu, Shukichi Tanaka, Tadashi Saitoh, Akira Sugimura

Applied Physics Express   8, 105001-1-3   2015.9

Band gap tuning of Ni1−xMgxO films by RF-sputter deposition for deep- ultraviolet photodetectors

Hiroki Nishitani, Kohei Ohta, Sosuke Kitano, Ryosuke Hamano, Mitsuru Inada, Tomohiro Shimizu, Shoso Shingubara, Hiromitsu Kozuka, Tadashi Saitoh

Applied Physics Express   8, 105801-1-3   2015.9

Marked increase in photoluminescence from porous Si aged in ethanol solution Reviewed

K. Matsumoto, R. Nishio, T. Nomura, K. Kamiya, M. Inada, S. Suzuki

Jpn. J. Appl. Phys   54, 021301-1-4   2015.1

Narrowband, Visible-Blind UV-A Sensor Based on a Mg0.52Zn0.48O Film Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target

Y. Kohama, T. Nagai, M. Inada, T. Saitoh

Advances in Materials Science and Engineering   120463-01-04   2014.3

Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting Reviewed

Ikurou Umezu, Muneyuki Naito, Daisuke Kawabe, Yusuke Koshiba, Katsuki Nagao, Akira Sugimura, Tamao Aoki, Mitsuru Inada, Tadashi Saitoh, Atsushi Kohno

Appl. Phys. A   117, 155-159   2014.2

Microwave-assisted Synthesis of Near-infrared-luminescent Ovalbumin-protected Gold Nanoparticles as a Luminescent Glucose Sensor

Junya Yoshimoto, Naoki Tanaka, Mitsuru Inada, Ryuichi Arakawa, Hideya Kawasaki

Chem. Lett.   43, 793–795   2014.2

Single nanosized FeO nanocrystals with photoluminescence properties

Yuta Sugii, Mitsuru Inada, Hiroki Yano, Yasushi Obora, Yasuhiko Iwasaki, Ryuichi Arakawa, Hideya Kawasaki

J. Nanopart. Res.   15, 1379-1-8   2013.1

AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

Tomohiro Shimizu, Takuya Yamaguchi, Fumihiro Inoue, Mitsuru Inada, Shoso Shingubara

Jpn. J. Appl. Phys.   51, 11PE02-1-4   2012.11

Photoluminescence from Excited Energy Bands in Au25 Nanoclusters

Isamu Sakanaga, Mitsuru Inada, Tadashi Saitoh, Hideya Kawasaki, Yasuhiko Iwasaki, Toshiki Yamada, Ikurou Umezu, Akira Sugimura

Applied Physics Express   4, 095001-1-3   2011.8

Stability of the DMF-Protected Au Nanoclusters: Photochemical, Dispersion, and Thermal Properties

Hideya Kawasaki, Hiroko Yamamoto, Hiroaki Fujimori, Ryuichi Arakawa, Yasuhiko Iwasaki, Mitsuru Inada

Langmuir   26(8), 5926–5933   2010.4

Surfactant-free solution synthesis of fluorescent platinum subnanocluster

Hideya Kawasaki, Hiroko Yamamoto, Hiroki Fujimori, Ryuichi Arakawa, Mitsuru Inada, Yasuhiko Iwasaki

Chem. Commun.   46, 3759–3761   2010.4

One-pot preparation of water-soluble blue luminescent silica flakes via microwave heating

Y. Iwasaki, Y. Shibata, A. Watanabe, M. Inada, H. Kawasaki, T. Uchino

Chem. Lett.   39, 370-371   2010.3

Oxidation processes of surface hydrogenated silicon nanocrystallites prepared by pulsed laser ablation and their effects on the photoluminescence wavelength

Ikurou Umezu, Akira Sugimura, Toshiharu Makino, Mitsuru Inada, Kimihisa Matsumoto

J. Appl. Phys.   2008

STM observation of zinc(II) bridled chiroporphyrin molecules on titanium dioxide surface

Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Shinro Mashiko, Lorette Scifo, Benjamin Grevin, Anna Castaings, Jean-Claude Marchon

Thin Solid Films   2008

Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas

Ikurou Umezu, Akira Sugimura, Mitsuru Inada, Toshiharu Makino, Kimihisa Matsumoto, M. Takata

Physical Review B   2007

Scanning Tunneling Microscopy of The Porphyrin-based Molecules on TiO2 Surface

Mitsuru Inada, L. Scifo, S.Tanaka, B.Grevin, H.Suzuki, S.Makino

Jpn. J. Appl. Phys.   2103-2105   2006

Correlation between Natural Oxidation Process and Photoluminescence Properties of Hydrogenated Si Nanocrystallites Prepared by Pulsed Laser Ablation Reviewed

Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Akira Sugimura

Jpn.J.Appl. Phys.   44, 8742-8746   2005.1

Non-contact AFM study of oxidized surface of single-crystalline SrTiO3 with porphyrin-based molecules

Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mshiko

Nanptechnology   16, S107-S111   2005

Inter-dot electron transport in coupled InAs quantum dots under magnetic field

Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A. Sugimura

Semiconductor Science and Technology   19, S54-S55   2004

Optical and transport studies in coupled InAs quantum dots embedded in GaAs

Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

Physica E   21, 317-321   2004

Recombination process of CdS quantum dot covered by novel polymer chains

Mitsuru Inada, I.Umezu, R.Koizumi, A.Sugimoto, T.Makino, A.Sugimura, Y.sunaga, T.Ishii, Y. Nagasaki

Physica   21, 1102-1105   2004

Correlation Between surface oxide and photoluminescene properties of Si nanoparticles prepared by pulseed laser ablation

Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

Appl. Phys. A   79, 1545-1547   2004

Reaction between nitrogen gas and silicon species during pulsed laser ablation

Mitsuru Inada, Ikurou Umezu, Kimimori Kohno, Tomohiro Yamaguchi, Toshinobu Makino, Akira Sugimura

J. Vac. Sci. Technol   21, 1680-1682   2003

Optical properties of CdS nanocrystal covered by polymer chains on the surface

Mitsuru Inada, I. Umezu, R. Koizumi, K. Mandai, T.Aoki-Matsumoto, K.Mizuno, A.Sugimura, Y.Sunaga, T.Ishii, Y.Nagasaki

Microelectronic Engineering   66, 53-58   2003

Effect of gas pressure on the reactive laser ablation of silicon target

Mitsuru Inada, Ikurou Umezu, Akira Sugimura

J. Vac. Sci. Technol   21, 84-86   2003

"Effects of hydrogenation on photolu,imescenes formed by pulsed laser ablation"

Mitsuru Inada, H. Nakagawa, I.Umezu, A.Sugimura

Materials Science and Engineering   101 283-285   2003

Effect of argon and hydrogen plasmas on the surface of sulicon

Mitsuru Inada, I.Umezu, K.Kohno, K.Aoki, Y.Koyama, A.Sugimura

Vacuum   66, 453-456   2002

Nanoscale anodization of an amorphous silicon surface with an atomic force microscope

Mitsuru Inada, Ikurou Umezu, Takatoshi Yoshida, Kimishima Matsumoto, Akira Sugimura

Appl. Phys. Lett.   81, 1492-1493   2002

Nono-oxidation of an amorphous silicon surface with an atomic force microscope

Mitsuru Inada, I.Umezu, T.Yoshida, K.Matsumoto, A.Sugimura

J. Noncryst. Solids   299-302, 10910-1094   2002

Photoluminescence properties of amorphous silicon-based oxygen and hydrogen alloys

Mitsuru Inada, Ikurou Umezu, Ken-ichi Yoshida, Naomichi Sakamoto, Takatoshi Murota, Yoshiaki Takashima, Akira Sugimura

J. Appl. Phys.   91, 2009-2013   2002

Deposition of silicon nitride films by pulsed laser ablation of the Si target in Nitrogen gas

Mitsuru Inada, Ikurou Umezu, Kimimori Kohno, Tomohiro Yamaguchi, Akira Sugimura

J. Vac. Sci. Technol   20, 30-32   2002

Effect of structure on radiative recombination process in amorphous silicon suboxide prepareing by rf sputtering

Mitsuru Inada, Ken-ichi Yoshida, Ikurou Umezu, Naomichi Sakamoto, Akira Sugimura

J. Appl. Phys.   92, 5936-5941   2002

Effects of Hydrogen on Si nanoparticles formed by pulsed laser ablation

Mitsuru Inada, Hiroyuki Nakagawa, Ikurou Umezu, Akira Sugimura

Appl. Surface Science   197-198, 666-669   2002

Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient

Mitsuru Inada, I.Umezu, K.. Kohno, T.Yamaguchi, A.sugimura

Appl. Surface Science   197-198, 376-378   2002

Loacl Magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

Mitsuru Inada, Naoki Yoneyama, Takahiko Sasaki, Norio Kobayashi, syoji Yamada

Synthtic Metals   120, 815-816   2001

Conduction-type control of Ge films grown on GaAs by molecular beam epitaxy

Mitsuru Inada, T. Fujishima, I.Umezu, A.sugimura, S.Yamada

J. Crys. Growth   227-228, 791-795   2001

Correlation Between photoluminescence intensity and micro syructure in amorphous silicon films prepared by reactive RF sputtering

Mitsuru Inada, Ikurou Umezu, Takatoshi Murota, Masayuki Kawata, Yoshiaki Takasima, Ken-ichi Yoshida, Akira Sugimura

Jpn. J. Appl. Phys   39, L844-L846   2000

Ge selective growth on(001)GaAs substrates by molecular beam epitaxy

Mitsuru Inada, Hidenobu Hori, Syoji Yamada

Jpn. J. Appl. Phys   38, L398-L400   1999

Fiest Order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

Mitsuru Inada, Takahiko Sasaki, Terukazu Nishizaki, Norio Kobayashi, Syoji Yamada, Tetsurou Fukase

J. Low Temp. Phys.   117, 1423-1427   1999

Quanturn Hole Transport in GaAs-Ge-GaAs Lateral Narrow Junctions

Mitsuru Inada, Syoji Yamada

Physica B   272, 78-81   1999

Fabrication of GaAs-Ge-GaAs Lateral Narrow Junctions and Low-Temperaure Hole Transport

Mitsuru Inada, T.Kikutani, H.Hori, S.Yamada

Solid-state electronics   42, 1539-1542   1998

Correlation between PL emission band and growth of oxide layer on surface of silicon nanocrystallites

Mitsuru Inada, I.Umezu, M.Koyama, T.Hasegawa, K.Matsumoto, A.sugimura

AIP conferenec proceedings   Vol.772 855-856   2004

水素化Siナノ決勝を活性層に持つEL素子の発光波長制御

稲田 貢, 小山基彦, 今井俊和, 梅津郁朗, 杉村陽

2004

非接触型原子間力顕微鏡によるSTO単結晶表面の原始スケール観察

稲田 貢, 田中秀吉, 鈴木仁, 上門敏也, 益子信郎

2004

レーザーアブレーションにおけるSiと水素の反応

稲田 貢, 木村巧, 梅津郁朗, 杉村陽

2004

Correlation between electronic structure and chemical bond on the surface of hydrogeneted silicon nanocrystallities

Mitsuru Inada, I.Umezu, T.Makino, M.Takata, A.Sugimura

AIP conferenec proceedings   Vol.772 691-692   2004

Scanning tunnering microscopy observation of porphyrin molecules deposited on Au(III) substrate

Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mashiko

The International Conference on Nano-molecular Electronics(ICNME2004）   PB-24   2004

Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

Mitsuru Inada, Ikurou Umezu, Shukichi Tanaka, Shinro Mashiko, Akira Sugimura

Mater. Res. Symp. Proc.   "832, F7.24.1-F7.24.5"   2004

Preparation of surface controleled silicon nanocrystallites by pulsed laser ablation

Mitsuru Inada, I.Umezu, T.Makino, A.Sugimura

AIP conferenec proceedings   Vol.772 861-862   2004

Optical properties of US nanocrystal covered by polymer chains on the surface

Umezu, I, R Koizumi, K Mandai, T Aoki-Matsumoto, K Mizuno, M Inada, A Sugimura, Y Sunaga, T Ishii, Y Nagasaki

MICROELECTRONIC ENGINEERING   66 ( 1-4 )   53 - 58   2003.4

Effects of plasma surface treatment on the surface of silicon nanocrystal

Mitsuru Inada, I. Umezu, K.Jyuoji, K.Yoshida, T.Makino;A

2003

"Correlation between surface oxide and photolu,imescene properties of si nanoparticles prepared by pulsed laser ablation"

Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

2003

Structural and Optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

Mitsuru Inada, T.Makino, K.Yoshida, I.Umezu, A.Sugimura

2003

Nanoparticle formation and chemical reactions in the silicon laser ablation plume with a hydrogen gas atmosphere

Mitsuru Inada, T.Kimura, T.Makino, I.Umezu, A.Sugimura

2003

Nano-oxidation of an amorphous silicon surface with an atomic force microscope

I. Umezu, T. Yoshida, K. Matsumoto, M. Inada, A. Sugimura

Journal of Non-Crystalline Solids   299-302 ( 2 )   1090 - 1094   2002.4

Preparation of SiNx film by pulsed laser ablation in nitrogen gas ambient

I. Umezu, T. Yamaguchi, K. Kohno, M. Inada, A. Sugimura

Applied Surface Science   197-198   376 - 378   2002

Correlation between structure and recombination process in Si-based amorphous alloys prepared by RF sputtering

Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

2002

Correlation between structure and nonradiative recombination process in silicon nanocrystallites

Mitsuru Inada, I.Umezu, H.Nakagawa, K.Matsumoto, A.Sugimura

Proc. 26th Int. Conf. Phys. of Semicond.   "CD-ROM D173,1-4"   2002

Optical properties of CdS nanosphere possesing tethered PEG chains on the surface

Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, T.Ishi, Y.Nagasaki

2002

Effects of hydrogen on photoluminescene of Si nanoparticles formed by pulsed laser ablation

Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

2002

水素化したSiナノ微粒子の発光特性

稲田 貢, 梅津郁朗, 杉村陽

2002

Observation of inter-dot electron transport via spin-split states in InAs quantum dot

Mitsuru Inada, S. Sato, I. Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

Proc. 26th Int. Conf. Phys. Of Semicond   "CD-ROM H188, 1-5"   2002

"Effects of nanoscale anodization of silicon surface on the photolu,imescene properties"

Mitsuru Inada, I.Umezu, T. Yoshida, K.Matsumoto, A.Sugimura

2002

Optical properties of CdS quantum dot covered by novel polymer chains

Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T.Ishi, Y. Nagasaki

Proc. 26th Int. Conf. Phys. Of Semicond.   "CD-ROM H202, 1-4"   2002

Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation

M. Inada, H. Nakagawa, I. Umezu, A. Sugimura

Applied Surface Science   197-198   666 - 669   2002

Conduction-type control of Ge films grown on (NH4)2S-treated GaAs by molecular beam epitaxy

M. Inada, T. Fujishima, I. Umezu, A. Sugimura, S. Yamada

Journal of Crystal Growth   227-228   791 - 795   2001.7

Photoluminescence from Nanoscale Si ina-siOx Matrix

Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

Mat. Res. Soc. Symp. Proc.   "638, F5.19-F5.19.6"   2001

Many body effect inphoto-conmductivity in InAs/GaAs self assembled quantum dots

Mitsuru Inada, K. Ohnishi, I.Umezu, P.O.Vaccaro, A.Sugimura

Mat. Res. Soc. Symp. Proc.   642 J3.3.1-J3.3.6   2001

Loacl Magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2 Reviewed

Mitsuru Inada, Naoki Yoneyama, Takahiko Sasaki, Norio Kobayashi, syoji Yamada

Synthtic Metals   120, 815-816   2001

Effects of surface passivation of silicon nanocrystabilities prepared by pulsed laser ablation

Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

2001

Effect of Oxygen and nitrogen plasma treatment on the surface of silicon nanocrystallities

Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

2001

Formation of Si-based compounds by reactive pulsed laser ablation technique

Mitsuru Inada, I.Umezu, K.Kohno, T.Yamauchi, A.Sugimura

2001

Lateral photo-conductance via in-plane inter-dot tunneling in self-assembled inAs/GaAs quantum dot ensembles

Mitsuru Inada, K.Ohnishi, I.Umezu, A.Sugimura, P.O.Vaccaro

Proc. 25th Int. Conf. Phys. of Semicond.   "CD-ROM, 1063-1064"   2000

Quanturn hole transport in GaAs-Ge-GaAs lateral narrow junctions

Mitsuru Inada, S.Yamada

1999

Fiest order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

Mitsuru Inada, T.Sasaki, T.Nishizaki, N.Kobayashi, S.Yamada, T. Fukase

1999

Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

Mitsuru Inada, Ikurou Umezu, Shukichi Tanaka, Shinro Mashiko, Akira Sugimura

"Mat. Res. Soc. Symposium (2004 Mrs fall meeting), Boston, USA"  2004 

水素化Siナノ決勝を活性層に持つEL素子の発光波長制御

稲田 貢, 小山基彦, 今井俊和, 梅津郁朗, 杉村陽

第65回応用物理学会学術講演会  2004 

レーザーアブレーションにおけるSiと水素の反応

稲田 貢, 木村巧, 梅津郁朗, 杉村陽

第65回応用物理学会学術講演会  2004 

Preparation of surface controleled silicon nanocrystallites by pulsed laser ablation

Mitsuru Inada, I.Umezu, T.Makino, A.Sugimura

"27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004 

Correlation between PL emission band and growth of oxide layer on surface of silicon nanocrystallites

Mitsuru Inada, I.Umezu, M.Koyama, T.Hasegawa, K.Matsumoto, A.sugimura

"27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004 

Correlation between electronic structure and chemical bond on the surface of hydrogeneted silicon nanocrystallities

Mitsuru Inada, I.Umezu, T.Makino, M.Takata, A.Sugimura

"27th International Conference on the Physics of Semiconductors(ICPS 27), Arizona, USA"  2004 

非接触型原子間力顕微鏡によるSTO単結晶表面の原始スケール観察

稲田 貢, 田中秀吉, 鈴木仁, 上門敏也, 益子信郎

日本物理学会2004年秋季大会  2004 

Scanning tunnering microscopy observation of porphyrin molecules deposited on Au(III) substrate

Mitsuru Inada, Shukichi Tanaka, Hitoshi Suzuki, Toshiya Kakimoto, Shinro Mashiko

"The International Conference on Nano-molecular Electronics(ICNME2004), Kobe, Japan"  2004 

Study of silicon nanocrystal prepared by pulsed laser ablation in H2 gas

Mitsuru Inada, Kimihisa Matsumoto, Hiroyuki Nakagawa, Ikurou Umezu, Akira Sugimura

"Mem. Konan Univ., Sci. Ser"  2003 

Effects of plasma surface treatment on the surface of silicon nanocrystal

Mitsuru Inada, I. Umezu, K.Jyuoji, K.Yoshida, T.Makino, A.

"The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003 

Recombination process of CdS quantum dot covered by novel Polymer Chains

Mitsuru Inada, I. Umezu, R.Koizumi, A.Sugimoto, T.Makino, A.Sugimura, Y.sunaga, T.Ishii, Y. Nagasaki

"The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003 

Optical and transport studies in coupled InAs quantum dots embedded in GaAs

Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

"The 11th Int. Conf. on Modulated Semiconductor Structuress (MSS11), Nara, Japan"  2003 

"Correlation between surface oxide and photolu,imescene properties of si nanoparticles prepared by pulsed laser ablation"

Mitsuru Inada, Ikurou Umezu, Kimihisa Matsumoto, Toshiharu Makino, Akira Sugimura

"7th Int. Conf. on Laser Ablation (COLA '03), Crete, Greece"  2003 

Structural and Optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

Mitsuru Inada, T.Makino, K.Yoshida, I.Umezu, A.Sugimura

"7th Int. Conf. on Laser Ablation (COLA '03) , Crete, Greece"  2003 

Nanoparticle formation and chemical reactions in the silicon laser ablation plume with a hydrogen gas atmosphere

Mitsuru Inada, T.Kimura, T.Makino, I.Umezu, A.Sugimura

"7th Int. Conf. on Laser Ablation (COLA '03), Crete, Greece"  2003 

Inter-dot electron transport in coupled InAs quantum dots under magnetic field

Mitsuru Inada, I.Umezu, P.O.Vaccaro, S.Yamada, A. Sugimura

"The 13th International Conference on Nonequilibrium Carrier Dynamics in semiconductors (HCIS-13), Mondene, Italy"  2003 

Microstructure in a-Siox prepared by RF sputtering method and its effect on radiative recombination mechanism

Mitsuru Inada, Ken-ichi Yoshida, Ikurou Umezu, Akira Sugimura

"Mem. Konan Univ., Sci. Ser"  2002 

Effects of hydrogen on photoluminescene of Si nanoparticles formed by pulsed laser ablation

Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

"E-MRS 2002 spring meeting 5, Strasbourg, France"  2002 

水素化したSiナノ微粒子の発光特性

稲田 貢, 梅津郁朗, 杉村陽

第63回応用物理学会学術講演会  2002 

Correlation between structure and recombination process in Si-based amorphous alloys prepared by RF sputtering

Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

"26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

Correlation between structure and nonradiative recombination process in silicon nanocrystallites

Mitsuru Inada, I.Umezu, H.Nakagawa, K.Matsumoto, A.Sugimura

"26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

Optical properties of CdS Nanocrystal Covered by Polymer Chains on the surface

Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T. Ishi, Y. Nagasaki

"The 8yh International Conference on Electronic Materials , Xian, China"  2002 

Optical properties of CdS nanosphere possesing tethered PEG chains on the surface

Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, T.Ishi, Y.Nagasaki

"E-MRS 2002 spring meeting, Strasbourg, France"  2002 

"Effects of nanoscale anodization of silicon surface on the photolu,imescene properties"

Mitsuru Inada, I.Umezu, T. Yoshida, K.Matsumoto, A.Sugimura

"26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

Optical properties of CdS quantum dot covered by novel polymer chains

Mitsuru Inada, I.Umezu, K.Mandai, R.Koizumi, A.Sugimura, Y.Sunaga, T.Ishi, Y. Nagasaki

"26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

Observation of inter-dot electron transport via spin-split states in InAs quantum dot

Mitsuru Inada, S. Sato, I. Umezu, P.O.Vaccaro, S.Yamada, A.Sugimura

"26th Int. Conf. Physics of Semiconductors (ICPS 26), Edinburgh, United Kingdom"  2002 

Effects of surface passivation of silicon nanocrystabilities prepared by pulsed laser ablation

Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

"6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001 

Formation of Si-based compounds by reactive pulsed laser ablation technique

Mitsuru Inada, I.Umezu, K.Kohno, T.Yamauchi, A.Sugimura

"19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001 

Photoluminescence from Nanoscale Si ina-siOx Matrix

Mitsuru Inada, I.Umezu, K.Yoshida, A.Sugimura

"Mat. Rea. Soc. Symposium (2000 MRS fall meeting) , Boston, USA"  2001 

Many body effect inphoto-conmductivity in InAs/GaAs self assembled quantum dots

Mitsuru Inada, K. Ohnishi, I.Umezu, P.O.Vaccaro, A.Sugimura

"Mat. Rea. Soc. Symposium (2000 MRS fall meeting) , Boston, USA"  2001 

Effects of hydrogen on Si nanoparticles formed by pulsed laser ablation

Mitsuru Inada, H.Nakagawa, I.Umezu, A.Sugimura

"6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001 

Effect of Oxygen and nitrogen plasma treatment on the surface of silicon nanocrystallities

Mitsuru Inada, K.Yoshida, K.Jyuohji, I.Umezu, A.Sugimura

"19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001 

Nano-oxidation of amorphous silicon surface with an atomic force microscope

Mitsuru Inada, I.Umezu, T.Yoshida, K.Matsumoto, A.Sugimura

"19th Int. Conf. on Amorphous and Microcrystalline Semiconductors (ICAM 19) , Nice, France"  2001 

Preparation of SiNx Film by pulsed laser ablation in nitrogen gas ambient

Mitsuru Inada, I.Umezu, K.Kohno, T.Yamaguchi, A.Sugimura

"6th Int. Conf. on Laser Ablation (COLA '01) , Tsukuba, Japan"  2001 

Conduction-type control of Ge films grown on GaAs by molecular beam epitaxy

Mitsuru Inada, T. Fujishima, I.Umezu, A.sugimura, S.Yamada

"10th Int. Conf. Molecular Beam Epitaxy (MBE X) , Beijing, China"  2000 

Lateral photo-conductance via in-plane inter-dot tunneling in self-assembled inAs/GaAs quantum dot ensembles

Mitsuru Inada, K.Ohnishi, I.Umezu, A.Sugimura, P.O.Vaccaro

"25th Int. Conf. Physics of Semiconductors (ICPS25) , Osaka, Japan"  2000 

Loacl magnetization measurements of the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

Mitsuru Inada, N.Yonenaga, T.Sasaki, N.Kobayashi, S.Yamada

"Int. Conf. on Science and Technology of Synthetic Metals (ICSM2000), Gastein, Austria"  2000 

Coulomb Blockade Effects at Ge Dot Burried in p-GaAs constrictions

Mitsuru Inada, S.Yamada

"The 9th International Conference on Narrow Gap Semiconductors (NG9) Berlin, Germany"  1999 

Fiest order vortex phase transition in the organic superconductor k-(BEDT-TTF)2Cu(NCS)2

Mitsuru Inada, T.Sasaki, T.Nishizaki, N.Kobayashi, S.Yamada, T. Fukase

"Int. Conference on Physics and Chemistry of Molecular and Oxide Superconductors (MOS99), Stockholm, sweden"  1999 

Quanturn hole transport in GaAs-Ge-GaAs lateral narrow junctions

Mitsuru Inada, S.Yamada

"The 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) , Kyoto, Japan"  1999 

Fabrication of GaAs-Ge-GaAs Lateral Narrow Junctions and Low-Temperaure Hole Transport

Mitsuru Inada, T.Kikutani, H.Hori, S.Yamada

"Int. Workshop on NANO-PHYSICS AND ELECTRONICS(NPE'97) , Tokyo, Japan"  1997